2SC5106 Search Results

LT 5232

Abstract: 2SC5106
Contextual Info: TOSHIBA 2SC5106 2 S C 5 1 06 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

Contextual Info: T O SH IB A 2SC5106 i ç c R 1 n fi TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm FOR VCO APPLICATION + 0.5 2 .5 -0 .3 M A X I M U M RATINGS Ta = ?S°Cl CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: 2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

2SC5106

Contextual Info: 2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

Contextual Info: T O S H IB A 2SC5106 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 06 Unit in mm FOR VCO APPLICATION M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

2SC5106

Contextual Info: TO SH IBA 2SC5106 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 06 Unit in mm + 0.5 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

Contextual Info: 2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

2SC5106

Contextual Info: TOSHIBA 2SC5106 2 S C 5 1 06 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

Contextual Info: Reliability Tests Report Product Name: 2SC5106 Package Name: S-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

Contextual Info: 2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage

Contextual Info: TOSHIBA 2SC5106 2 S C 5 1 06 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

2SC5106

Abstract: IC302
Contextual Info: 2SC5106 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5106 ○ VHF~UHF 発振用 単位: mm 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ ･ ベ ー ス 間 電 圧 VCBO 20 V コ レ ク タ ･ エ ミ ッ タ 間 電 圧

2SC5106

Abstract: ZO 607 MA
Contextual Info: 2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO

Contextual Info: TOSHIBA 2SC5106 2 SC 5 1 0 6 TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE U nit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

FHC30LG

Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
Contextual Info: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

JDV2S31CT

Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。

2sc5108

Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Contextual Info: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,

z 607 ma

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R 2 £ Q § FOR VCO APPLICATION ^ Q ß U nit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent Collector Power Dissipation

3sk catalog

Abstract: TE85L Toshiba
Contextual Info: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入