2SC526 Search Results

d 5287

Abstract: 2SC5264
Contextual Info: Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm

2SC5260

Abstract: OS63
Contextual Info: TOSHIBA 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5260 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

Contextual Info: TOSHIBA 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5260 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : Gain = 8.5dB (f = 2GHz) M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

Contextual Info: TOSHIBA 2SC5261F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : |S 2i el2= 9-5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL

Contextual Info: TOSHIBA 2SC5260 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SC5266

Abstract: 2SC5266A
Contextual Info: TOSHIBA 2SC5266A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5266A Unit in mm SWITCHING REGULATOR APPLICATIONS 10 ± 0.2 HIGH VOLTAGE SWITCHING APPLICATIONS 1 01.2 DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : tr = 0.5/^s Max. , tf= 0.3/^s (Max.)

2SC5266A

Contextual Info: 2SC5266A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5266A Switching Regulator Applications High-Voltage Switching Applications Unit: mm DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs max , tf = 0.3 µs (max) • High breakdown voltage: VCEO = 400 V

2SC5265

Abstract: EN5321 VCBO-1200V
Contextual Info: Ordering number:EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.

2SC5261

Contextual Info: TO SH IBA 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = 8.5dB (f = 2GHz) 1.6 ± 0.2 ,0.8 ± 0 . 1, r— :— 1

2SC5262

Contextual Info: TO SH IBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • : NF = 1.7dB f = 2GHz : Gain = lld B (f = 2GHz) Low Noise Figure High Gain m a v ì m i im RATiM r;« ; SYMBOL VCBO v CEO

Contextual Info: TOSHIBA 2SC5266A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5266A SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • Excellent Switching Times : ^ = 0.5^$ Max. , tf=0.3,«s (Max.) High Collector Breakdown Voltage : V qj]q = 400V

Contextual Info: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • Low Noise Figure High Gain . 1.25 ± 0-1 : NF = 1.7dB f=2GHz : Gain = lldB (f = 2GHz) ri 2 M A X IM U M RATINGS (Ta = 25°C)

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5261F Amplifier 1.7 2Ghz
Contextual Info: 2SC5261F TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : |S2i e|2= 9.5dB (f=2GHz) 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SC5263 T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS Low Noise Figure : NF = 1.7dB f=2GHz High Gain : Gain = lld B (f= 2 G H z ) M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

2SC5264

Abstract: 2SC5264LS 2079d
Contextual Info: Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.

TA-3430

Abstract: 2SC5265LS ITR08008 ITR08009 ITR08010 ITR08011 ITR08012 ITR08013
Contextual Info: Ordering number : ENN5321A 2SC5265LS NPN Triple Diffused Planar Silicon Transistor 2SC5265LS Inverter-Controlled Lighting Applications Features • • • Package Dimensions High breakdown voltage VCBO=1200V . High reliability(Adoption of HVP process). Adoption of MBIT process.

2SC5261FT

Contextual Info: 2SC5261FT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : |S2iel2—9.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

transistor marking c3n

Contextual Info: TOSHIBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure : N F = 1.7dB f=2G H z H igh Gain : Gain = lld B (f= 2 G H z ) MAXIMUM RATINGS (Ta = 25°C) SYM BOL CHARACTERISTIC

Contextual Info: T O S H IB A 2SC5261 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5261 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f=2GHz : Gain = 8.5dB (f = 2GHz) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.2 2.9 - 0.3 • • 1 : NF = 1.7dB f=2GHz Low Noise Figure High Gain -H 1 : Gain = lld B (f = 2GHz) 2 MAXIMUM RATINGS (Ta = 25°C)

2SC5262

Contextual Info: TO SH IBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • : NF = 1.7dB f = 2GHz : Gain = lld B (f = 2GHz) Low Noise Figure High Gain m a v ì m i im RATiM r;« ; SYMBOL VCBO v CEO

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5263
Contextual Info: TOSHIBA 2SC5263 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5263 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SC5262

Contextual Info: TOSHIBA 2SC5262 TO SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE 2SC5262 Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS + 0.2 • • 2.9-0.3 : NF = 1.7dB f = 2GHz : Gain = lldB (f = 2GHz) Low Noise Figure High Gain -e M A X IM U M RATINGS (Ta = 25°C)

EN5321

Abstract: 2SC5265 2SC526 TA064 p60e
Contextual Info: Ordering number: EN5321 SAMYO No.5321 _ 2SC5265 i NPN Triple Diffused Planar Silicon Transistor Inverter-controlled Lighting Applications Features •High breakdown voltage Vcbo - 1200V . • High reliability (Adoption of HVP process).