2SC530 Search Results

NPN Transistor 600V

Abstract: NPN 600V transistor 2sc5305 transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V 1200v 3A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION •High Breakdown Voltage :V BR CBO= 1200V (Min) ·High Speed Switching APPLICATIONS ·Designed for inverter lighting applications. Absolute maximum ratings (Ta=25℃)

Contextual Info: TO SHIBA 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V ç;e o = 400V • Low Saturation Voltage : VCE sat - °-4V (Typ.) d c = 20mA, Ig -0 .5 m A ) MAXIMUM RATINGS (Ta = 25°C)

54164

Abstract: 2sc5300
Contextual Info: Ordering number:EN5416A NPN Triple Diffused Planar Silicon Transistor 2SC5300 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

5416A

Abstract: 2SC5300 IC 54161
Contextual Info: O rdering num ber: EN 5416A ¡I N0.5416A i 2SC5300 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition Color Display Horizontal Deflection Output Applications F eatu res • High speed tf —100ns typ . • High breakdown voltage (Vcbo = 1500V).

2SC5307

Contextual Info: TO SH IBA 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • High Voltage : V^ e o -^OOV • Low Saturation Voltage •• V/"cm ' = 0 A\T Cy -Tjvr n- s Ì I n = 9.0m A Tn -J3 0.4 ±0.05

Contextual Info: 2SC5307 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Tc = 25°C)

2SC5301

Abstract: TA-0794
Contextual Info: Ordering number:EN5417A NPN Triple Diffused Planar Silicon Transistor 2SC5301 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

Contextual Info: TOSHIBA TENTATIVE 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2 SC 5 3 0 7 HIGH VOLTAGE SWITCHING APPLICATIONS • • High Voltage : V ç;e O = 400V Low Saturation Voltage : VCE sat - °-4V (TyP-) dC - 20mA, lg = 0.5mA) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: Ordering num ber: EN 5416A N 0.54I 6A 2SC5300 NPN Triple Diffused Planar Silicon Transistor SA w o Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features • High speed, tf= 100ns typ . • High breakdown voltage (V^bo = 1500V).

2SC5307

Contextual Info: TOSHIBA 2SC5307 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 HIGH VOLTAGE SW ITCHING APPLICATIONS • • High Voltage : V0 e O ~ 4OOV Low Saturation Voltage : V eE sat = °-4V (TyP-) d e = 20mA, Iß = 0.5mA) M A X IM U M RATINGS (Ta = 25°C)

2sc5302

Abstract: transistor 2sc5302 2SC5302 equivalent 2sc5302 applications
Contextual Info: Ordering number:EN5363B NPN Triple Diffused Planar Silicon Transistor 2SC5302 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process).

2SC5303

Abstract: TA-2322
Contextual Info: Ordering number:ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

TA1239

Abstract: 2SC5305 2SC5305LS CP12A TA-1239
Contextual Info: Ordering number:ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.

TA-1239

Abstract: VCBO-1200V EN5884 2SC5305 TA1239
Contextual Info: Ordering number:EN5884 NPN Triple Diffused Planar Silicon Transistor 2SC5305 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm

2sc5305

Abstract: 2SC5305L
Contextual Info: UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications

2SC5301

Abstract: 2SC5301 Equivalent TA-0794
Contextual Info: Ordering number:EN5417A NPN Triple Diffused Planar Silicon Transistor 2SC5301 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

ta1238

Abstract: TA-1238 2SC5304 EN5883
Contextual Info: Ordering number:EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm

2SC5303

Contextual Info: Ordering number:ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

Contextual Info: Ordering n u m b e r:E N 5363A 2SC5302 N0.5363A NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Defmition Color Display Horizontal Deflection Output Applications Features • High speed tf= 100ns typ . • High breakdown voltage (Vcbo = 1500V). • High reliability (Adoption of HVP process).

ta1238

Abstract: TA-1238 2SC5304 2SC5304LS
Contextual Info: Ordering number:ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.

2SC5307

Contextual Info: 2SC5307 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE sat = 0.4 V (typ.) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)

2SC5307

Contextual Info: TO SH IBA 2SC5307 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5307 HIGH VOLTAGE SWITCHING APPLICATIONS • • High Voltage : V^ e o -^OOV Low Saturation Voltage • V/"cm = 0 A\T C T v n Ì I n = 9.0m A Tn = 0 R m A Ì MAXIMUM RATINGS (Ta = 25°C

Contextual Info: 2SC5307 東芝トランジスタ シリコンNPN三重拡散形 2SC5307 ○ 高電圧スイッチング用 単位: mm • 高耐圧です。 • コレクタ・エミッタ間飽和電圧が低い。 : VCEO = 400 V : VCE sat = 0.4 V (標準) (IC = 20 mA, IB = 0.5 mA)

Contextual Info: Ordering num ber:EN 5417A I SAMYO i t 2SC5301 N0.5417A NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition Color Display Horizontal Deflection Output Applications I F e a tu re s • High speed tf= 100ns typ . • High breakdown voltage (Vcbo = 1500V).