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    Panasonic Electronic Components 2SC5632G0L

    RF TRANS NPN 8V 1.1GHZ SMINI3-F2
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    Panasonic Electronic Components 2SC563200L

    RF TRANS NPN 8V 1.1GHZ SMINI3-G1
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    2SC5632 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5632 Panasonic NPN Transistor Original PDF
    2SC5632 Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC563200L Panasonic RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 8VCEO 50MA S-MINI 3P Original PDF
    2SC5632G0L Panasonic RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 8VCEO 50MA SMINI-3 Original PDF

    2SC5632 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Features ■ Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment


    Original
    PDF 2002/95/EC) 2SC5632G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment


    Original
    PDF 2002/95/EC) 2SC5632G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment


    Original
    PDF 2002/95/EC) 2SC5632G

    2SC5632

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10


    Original
    PDF 2002/95/EC) 2SC5632 2SC5632

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10


    Original
    PDF 2002/95/EC) 2SC5632

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment


    Original
    PDF 2002/95/EC) 2SC5632G

    2SC5632

    Abstract: S-Mini3-G1
    Text: Transistors 2SC5632 Silicon NPN epitaxial planer type 0.425 Unit: mm For high-frequency amplification and switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High transition frequency fT • Smini3-G1 type package, allowing downsizing and thinning of the


    Original
    PDF 2SC5632 2SC5632 S-Mini3-G1

    2SC5632

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05


    Original
    PDF 2002/95/EC) 2SC5632 2SC5632

    2SC5632

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1


    Original
    PDF 2002/95/EC) 2SC5632 2SC5632

    2SC5632

    Abstract: No abstract text available
    Text: Transistors 2SC5632 Silicon NPN epitaxial planer type 0.425 Unit: mm For high-frequency amplification and switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High transition frequency fT • Smini3-G1 type package, allowing downsizing and thinning of the


    Original
    PDF 2SC5632 2SC5632

    ed2002

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1


    Original
    PDF 2002/95/EC) 2SC5632 ed2002

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632G Silicon NPN epitaxial planar type For high-frequency amplification and switching • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment


    Original
    PDF 2002/95/EC) 2SC5632G

    2SC5632

    Abstract: No abstract text available
    Text: Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching 0.425 Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment


    Original
    PDF 2SC5632 2SC5632

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5˚ 2.1±0.1 0.2±0.1 2 di p


    Original
    PDF 2002/95/EC) 2SC5632

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Features  Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic


    Original
    PDF 2002/95/EC) 2SC5950G 2SA2122G

    2SC5950

    Abstract: 2SC5950G 2SA2122G 2SC5632 2SA21
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic


    Original
    PDF 2002/95/EC) 2SC5950G 2SA2122G 2SC5950 2SC5950G 2SA2122G 2SC5632 2SA21

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic


    Original
    PDF 2002/95/EC) 2SC5950G 2SA2122G

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original
    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    2SC5950

    Abstract: 2SA2122G 2SC5632 2SC5950G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2122G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic


    Original
    PDF 2002/95/EC) 2SC5950G 2SA2122G 2SC5950 2SA2122G 2SC5632 2SC5950G