2SC576 Search Results

2SC5765

Contextual Info: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 Medium Power Amplifier Applications Strobo Flash Applications Low Saturation Voltage: Unit: mm VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic

2SC5761

Abstract: 2SC5761-T2 2FB200 transistor s2p MARKING T16
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

2sc5765

Contextual Info: UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION * medium power amplifier applications * strobo flash applications 1 FEATURES TO-92SP *Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA) 1.EMITTER

Contextual Info: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C)

transistor A1024

Abstract: A1712 nec a1232
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

2sc5766

Abstract: transistors bipolar
Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC5766 Category: Transistors /Bipolar Small-Signal Transistors/General Purpose Transistors Single

Contextual Info: [ Ordering number: ENN6989 NPN Triple Diffused Planar Silicon Transistor 2SC5763 ISAßfO i Switching Regulator Applications Features Package Dimensions • High breakdown voltage. • High reliability. • High-speed switching. u n it : m m 201 OC ■ W ideASO .

2sC5765 transistor

Abstract: 2SC5765
Contextual Info: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH „ DESCRIPTION medium power amplifier applications strobo flash applications „ FEATURES * Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA)

2SC5765

Contextual Info: 2SC5765 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5765 ○ 中電力増幅用 ○ ストロボ用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = 0.27 V (最大) (IC = 3 A/IB = 60 mA) 絶対最大定格 (Ta = 25°C)

Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

Contextual Info: Ordering number : ENN*0000 2SC5764 NPN Triple Diffused Planar Silicon Transistor 2SC5764 Switching Regulator Applications Preliminary Features • • • • Package Dimensions High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process.

Contextual Info: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: VCE sat (1) = 0.27 V (Max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic

Transistor 2sc5763

Abstract: 2SC5763 2sC5763 transistor ENN6989A TA-3501 IT03056 D0301 2SC576 IT03053
Contextual Info: Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features • • • • High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. unit : mm

04 6843 745 000 846

Abstract: 2SC5761 2SC5761-T2 3573 1231 053 Germanium Transistor Germanium power
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

Contextual Info: UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION * medium power amplifier applications * strobo flash applications 1 FEATURES TO-92SP *Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA) 1.EMITTER

2SC5765

Abstract: 2sC5765 transistor
Contextual Info: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: Ordering number : ENN6989 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features • • • • High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. unit : mm

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR M EDI U M POWER AM PLI FI ER ST ROBO FLASH ̈ DESCRI PT I ON medium power amplifier applications strobo flash applications ̈ FEAT U RES * Low Saturation Voltage: VCE sat = 0.27 V (max.),

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

ic 7848

Contextual Info: PRELIMINARY DATA SHEET NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 60 GHz • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm

Contextual Info: NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04 FEATURES • SiGe TECHNOLOGY: fT = 60 GHz Process • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm