2SC588 Search Results

2SA2098

Abstract: 2sc5887 IC 7495 datasheet TA-372 2SA2098-2SC5887 ic 7495 2SA20 7495 ic
Contextual Info: Ordering number : ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2

2sa2099

Abstract: 2SC5888 equivalent transistor 2sc5888 ENN7331 2SA20 D2502
Contextual Info: Ordering number : ENN7331 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2

C5886

Abstract: 2SC5886
Contextual Info: 2SC5886 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5886 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)

c5886

Abstract: transistor c5886 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

2SC5889

Contextual Info: UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching 1 *High allowable power dissipation. APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes.

74014

Abstract: DATASHEET OF IC 7401 2SC5889 74013
Contextual Info: Ordering number : ENN7401 2SC5889 NPN Epitaxial Planar Silicon Transistors 2SC5889 DC / DC Converter Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2033A Features • • 0.4 0.5 15.0 0.6 •

c5885

Abstract: TO220H 2sc5885 2SC5885 equivalent c5885 transistor SJD00312AED 2sc5885 transistor TO-220H c5885 datasheet 2SC588
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5885 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor 3.0±0.2 Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d 9.9±0.3 • Features

c5886

Abstract: 2SC5886
Contextual Info: 2SC5886 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5886 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)

C5886

Abstract: transistor c5886 c5886 transistor
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

C5886A

Contextual Info: 2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications DC/DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max)

2SA2093

Abstract: 2SC5880
Contextual Info: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)

2SA2099

Abstract: 2SC5888 equivalent transistor 2sc5888 D2502 TA-3711 2SC588
Contextual Info: 2SA2099 / 2SC5888 Ordering number : EN7331A SANYO Semiconductors DATA SHEET 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • •

c5885

Abstract: c5885 transistor 2SC5885 2SC5885 equivalent TO220H c5885 datasheet 2sc5885 transistor SJD00312AED c5885 data Diode 302
Contextual Info: Power Transistors 2SC5885 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor • Features Rating Unit Collector-base voltage Emitter open VCBO 1 500 V Collector-emitter voltage (E-B short) VCES 1 500 V Emitter-base voltage (Collector open)

c5886

Abstract: 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

Contextual Info: UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching 1 *High allowable power dissipation. APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes.

Contextual Info: Reliability Tests Report Product Name: 2SC5886A Package Name: New PW-Mold 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

C5886A

Abstract: 2SC5886A
Contextual Info: 2SC5886A 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5886A ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.22 V (最大)

c5881

Contextual Info: 2SC5881 Transistors Power transistor 60V, 5A 2SC5881 !External dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 !Features 1) High speed switching.

Contextual Info: Power transistor 60V, 2A 2SC5880 Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093

C5886

Abstract: 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A · Low collector-emitter saturation: VCE (sat) = 0.22 V (max) · High-speed switching: tf = 55 ns (typ.)

MAG 1832

Abstract: 2SC5882 2SC5882NPN
Contextual Info: 〈トランジスタ〉 2SC5882 開発中（暫定） 高周波増幅用 シリコンNPNエピタキシァル形 本品種は開発中につき後日変更する場合があります。 概 要 2SC5882は超小形外形樹脂封止形シリコンNPNエピタキ

transistor c5886

Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

6008E-12

Abstract: 2SC5880
Contextual Info: SPICE PARAMETER 2SC5880 by ROHM TR Div. * 2SC5880 NPN BJT model * Date: 2006/11/13 .MODEL 2SC5880 NPN + IS=270.00E-15 + BF=230.08 + VAF=100 + IKF=3.6536 + ISE=270.00E-15 + NE=1.4864 + BR=7.8806 + VAR=100 + IKR=.34994 + ISC=7.6008E-12 + NC=1.4061 + NK=.76747

2SA2093

Abstract: 2SC5880 c5880 60V transistor npn 2a switching applications
Contextual Info: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and