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    2SC602 Price and Stock

    Toshiba America Electronic Components 2SC6026CT-GR,L3F

    TRANS NPN 50V 0.1A CST3
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    DigiKey 2SC6026CT-GR,L3F Reel 50,000 10,000
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    2SC6026CT-GR,L3F Cut Tape 2,900 1
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    2SC6026CT-GR,L3F Digi-Reel 1
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    Rochester Electronics LLC 2SC6023-TR-E

    NPN 35MA 3.5V FT=14.5G
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    DigiKey 2SC6023-TR-E Bulk 39,000 4,438
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    Rochester Electronics LLC 2SC6024-TL-E

    BIP NPN 35MA 3.5V FT=14G
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    DigiKey 2SC6024-TL-E Bulk 16,000 3,806
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    Toshiba America Electronic Components 2SC6026MFV-Y,L3F

    TRANS NPN 50V 0.15A VESM
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    DigiKey 2SC6026MFV-Y,L3F Cut Tape 14,685 1
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    2SC6026MFV-Y,L3F Reel 8,000 8,000
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    2SC6026MFV-Y,L3F Digi-Reel 1
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    Avnet Americas 2SC6026MFV-Y,L3F Reel 12 Weeks 8,000
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    Mouser Electronics 2SC6026MFV-Y,L3F 22,593
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    TTI 2SC6026MFV-Y,L3F Reel 8,000
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    Toshiba America Electronic Components 2SC6026MFVGR,L3F

    TRANS NPN 50V 0.15A VESM
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    DigiKey 2SC6026MFVGR,L3F Cut Tape 12,094 1
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    2SC6026MFVGR,L3F Reel 8,000 8,000
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    2SC6026MFVGR,L3F Digi-Reel 1
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    Avnet Americas 2SC6026MFVGR,L3F Reel 12 Weeks 8,000
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    Mouser Electronics 2SC6026MFVGR,L3F 18,639
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    Verical 2SC6026MFVGR,L3F 16,000 8,000
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    Chip1Stop 2SC6026MFVGR,L3F 16,000
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    Find more 2SC602 price and stock on Findchips.com

    2SC602 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC602 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC602 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC602 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC602 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC602 Unknown Cross Reference Datasheet Scan PDF
    2SC602 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC602 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC602 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC602 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC602 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC6020 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Original PDF
    2SC6021 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Original PDF
    2SC6022 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Original PDF
    2SC6023 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications Original PDF
    2SC6023-TR-E SANYO Electric RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 3.5V 35MA MCP4 Original PDF
    2SC6024 Sanyo Semiconductor UHF to C Band Low-Noise Amplifier and OSC Applications Original PDF
    2SC6024-TL-E SANYO Electric RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 3.5V 35MA 3SSFP Original PDF
    2SC6025 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier and OSC Applications Original PDF
    2SC6026 Toshiba Transistor for Low-Frequency Small-Signal Amplification Original PDF
    2SC6026CT Toshiba Japanese - Transistors Original PDF

    2SC602 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6026CT Category: Transistors /Bipolar Small-Signal Transistors/General Purpose Transistors Single


    Original     		PDF 2SC6026CT C6026CT 2SA2154CT 2SC6026CT 16-Apr-09

    Untitled

    Abstract: No abstract text available
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV

    2SA21

    Abstract: 2SA2154 2SC6026
    Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026


    Original     		PDF 2SA2154 2SC6026 2SA21 2SA2154 2SC6026

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV

    2SC6026CT

    Abstract: 2SA2154CT
    Text: 2SC6026CT シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6026CT ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm 0.6±0.05 高耐圧です。 • コレクタ電流が大きい。: IC = 100 mA (最大)


    Original     		PDF 2SC6026CT 2SA2154CT 2SC6026CT 2SA2154CT

    7518

    Abstract: 2SC6021
    Text: 2SC6021 Ordering number : ENN8343 2SC6021 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET and MBIT processes. Large current capacitance.


    Original     		PDF 2SC6021 ENN8343 7518 2SC6021

    2SC6020

    Abstract: 2sc602
    Text: 2SC6020 Ordering number : ENN8356 2SC6020 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET and MBIT processes. Large current capacitance.


    Original     		PDF 2SC6020 ENN8356 2SC6020 2sc602

    4948 transistor bf

    Abstract: 8144-12 177.138 CBC 337 TRANSISTOR cBC 415 2SC6025 sanyo ccb 7230P BF 494 C Transistor C 1279
    Text: 2SC6025 Ordering number : ENN8144 NPN Epitaxial Planar Silicon Transistor 2SC6025 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : : Low operating voltage. High gain : NF=1.2dB typ f=2GHz .


    Original     		PDF 2SC6025 ENN8144 14GHz 21GHz S21e2 4948 transistor bf 8144-12 177.138 CBC 337 TRANSISTOR cBC 415 2SC6025 sanyo ccb 7230P BF 494 C Transistor C 1279

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.4 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 1 0.8 ± 0.05 1.2 ± 0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)


    Original     		PDF 2SA2154MFV 2SC6026MFV

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV

    NF 028

    Abstract: N2906 2SC6024 pc 1488 h cbc 547 CBC 328
    Text: 2SC6024 注文コード No. N 8 2 9 0 三洋半導体データシート N 2SC6024 特長 ・低雑音である NPN エピタキシァルプレーナ型シリコントランジスタ UHF ~ C バンド低雑音増幅 , 発振用 : NF=1.2dB typ （f=2GHz）


    Original     		PDF 2SC6024 14GHz 21GHz S21e2 S21e21 S21e22 NF 028 N2906 2SC6024 pc 1488 h cbc 547 CBC 328

    missile guidance ic

    Abstract: 2SA2154 2SC6026
    Text: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) : VCEO = 50 V, IC = 100 mA (max) • High hFE • Complementary to 2SA2154


    Original     		PDF 2SC6026 2SA2154 missile guidance ic 2SA2154 2SC6026

    2SC6026

    Abstract: 2SA2154
    Text: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications • High voltage and high current 0.6±0.05 • High hFE : hFE = 120~400 • Complementary to 2SC6026 0.35±0.05 : VCEO = −50 V, IC = −100 mA (max)


    Original     		PDF 2SA2154 2SC6026 2SC6026 2SA2154

    2SA2154

    Abstract: 2SC6026
    Text: 2SC6026 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6026 ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 • 高耐圧です。 • コレクタ電流が大きい。: IC = 100 mA (最大) • 電流増幅率が高い。


    Original     		PDF 2SC6026 2SA2154 2SA2154 2SC6026

    Untitled

    Abstract: No abstract text available
    Text: 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC6026CT General Purpose Amplifier Applications • Unit: mm High voltage and high current 0.6±0.05 0.5±0.03 Complementary to 2SA2154CT ３ ２ 0.25±0.03 １ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026CT 2SA2154CT

    5252 F 0911

    Abstract: 5252 F 1117 5252 F 1108 2SC6023 transistor Bf 966
    Text: 2SC6023 Ordering number : ENN8143 NPN Epitaxial Planar Silicon Transistor 2SC6023 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : : Low operating voltage. High gain : NF=1.2dB typ f=2GHz .


    Original     		PDF 2SC6023 ENN8143 22GHz S21e2 5252 F 0911 5252 F 1117 5252 F 1108 2SC6023 transistor Bf 966

    2SC6025

    Abstract: N2906 8144-12
    Text: 2SC6025 注文コード No. N 8 1 4 4 三洋半導体データシート N 2SC6025 NPN エピタキシァルプレーナ形シリコントランジスタ UHF ~ C バンド低雑音増幅 , 発振用 特長 ・低雑音である : NF=1.2dB typ（f=2GHz）


    Original     		PDF 2SC6025 14GHz 21GHz S21e2 S21e21 S21e22 2SC6025 N2906 8144-12

    transistor marking hy

    Abstract: 2SA2154MFV 2SC6026MFV PCT 245
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications High voltage and high current • Complementary to 2SA2154MFV • Lead (Pb) - free 1.2 ± 0.05 : hFE = 120~400 3 Unit Collector-base voltage


    Original     		PDF 2SC6026MFV 2SA2154MFV transistor marking hy 2SA2154MFV 2SC6026MFV PCT 245

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV

    2SC6026CT

    Abstract: 2SA21 2SA2154CT
    Text: 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC6026CT General Purpose Amplifier Applications • Unit: mm High voltage and high current 0.6±0.05 0.5±0.03 Complementary to 2SA2154CT ３ ２ 0.25±0.03 １ Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC6026CT 2SA2154CT 2SC6026CT 2SA21 2SA2154CT

    2SC6026

    Abstract: 2SA2154 2SA21
    Text: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications High voltage and high current • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154


    Original     		PDF 2SC6026 2SA2154 2SC6026 2SA2154 2SA21

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SC6026MFV シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC6026MFV 単位 : mm 0.22±0.05 • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) • 電流増幅率が高い。 • hFE リニアリティが優れています。


    Original     		PDF 2SC6026MFV 2SA2154MFV 2SA2154MFV 2SC6026MFV

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV