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    N2906 Price and Stock

    Toshiba America Electronic Components RN2906,LF

    TRANS 2PNP PREBIAS 0.2W US6
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    DigiKey RN2906,LF Cut Tape 5,268 1
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    RN2906,LF Digi-Reel 5,268 1
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    Toshiba America Electronic Components RN2906FE,LXHF(CT

    AUTO AEC-Q TR PNPX2 Q1BSR=4.7KOH
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    DigiKey RN2906FE,LXHF(CT Reel 4,000 4,000
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    RN2906FE,LXHF(CT Cut Tape 3,500 1
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    Mouser Electronics RN2906FE,LXHF(CT 7,988
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    Toshiba America Electronic Components RN2906FE(TE85L,F)

    TRANS 2PNP PREBIAS 0.1W ES6
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    DigiKey RN2906FE(TE85L,F) Cut Tape 4,000 1
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    Toshiba America Electronic Components RN2906FE,LF(CT

    PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO
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    DigiKey RN2906FE,LF(CT Cut Tape 3,876 1
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    RN2906FE,LF(CT Digi-Reel 3,876 1
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    Avnet Americas RN2906FE,LF(CT Reel 12 Weeks 4,000
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    Toshiba America Electronic Components RN2906,LXHF(CT

    AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
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    DigiKey RN2906,LXHF(CT Cut Tape 2,800 1
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    Mouser Electronics RN2906,LXHF(CT 8,858
    • 1 $0.3
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    N2906 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN7778B SANYO Semiconductors DATA SHEET Monolithic Linear IC LA7567GVA TV and VCR VIF/SIF IF Signal-Processing Circuit with NTSC SPLIT Support Overview The LA7567GVA is an NTSC SPLIT support VIF/SIF IF IC that adopts a semi-adjustment-free system. The VIF block


    Original     		PDF EN7778B LA7567GVA LA7567GVA

    SCH2301

    Abstract: No abstract text available
    Text: SCH2301 Ordering number : EN8974 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2301 General-Purpose Switching Device Applications Features • • • • • The SCH2301 incorporates two elements in the same package which are P-channel MOSFETs, thereby enabling


    Original     		PDF SCH2301 EN8974 SCH2301

    2044B

    Abstract: 2SC5808 N2906 2SC580 TA-3412
    Text: 注文コード No. N 7 0 7 9 2SC5808 三洋半導体データシート N 2SC5808 特長 NPN 三重拡散プレーナ形シリコントランジスタ スイッチング電源用 ・高耐圧である。 ・スイッチングスピードが速い。 ・ASO が広い。


    Original     		PDF 2SC5808 2044B 2045B IT03723 IT03721 IT03727 IT03728 2044B 2SC5808 N2906 2SC580 TA-3412

    VEC2815

    Abstract: No abstract text available
    Text: VEC2815 Ordering number : ENA0559 SANYO Semiconductors DATA SHEET VEC2815 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package


    Original     		PDF VEC2815 ENA0559 A0559-6/6 VEC2815

    2SC6025

    Abstract: N2906 8144-12
    Text: 2SC6025 注文コード No. N 8 1 4 4 三洋半導体データシート N 2SC6025 NPN エピタキシァルプレーナ形シリコントランジスタ UHF ~ C バンド低雑音増幅 , 発振用 特長 ・低雑音である : NF=1.2dB typ（f=2GHz）


    Original     		PDF 2SC6025 14GHz 21GHz S21e2 S21e21 S21e22 2SC6025 N2906 8144-12

    8873 IC

    Abstract: 2SC5781 D2502 N2906 4071 IC ic 14069
    Text: 注文コード No. N 7 3 2 1 2SC5781 三洋半導体データシート N 2SC5781 特長 NPN エピタキシァルプレーナ型シリコントランジスタ 高周波低雑音増幅 , 発振用 ・低雑音である ：NF=1.5dB typ（f=2GHz） 。 ・しゃ断周波数が高い：fT=6.5GHz typ


    Original     		PDF 2SC5781 S21e2 8873 IC 2SC5781 D2502 N2906 4071 IC ic 14069

    LFB01

    Abstract: it1168
    Text: LFB01 注文コード No. N 1 8 8 5 D 三洋半導体データシート 半導体ニューズ No.N1885C をさしかえてください。 LFB01 シリコンプレーナリードレス型 超高速スイッチングダイオード 特長 ・高信頼リードレスガラススリーブ構造。


    Original     		PDF LFB01 N1885C 100mA 62797GI BX-0698 N2906DH TC-00000327 1319KN D058KN LFB01 it1168

    SCH2401

    Abstract: 89754
    Text: SCH2401 Ordering number : EN8975 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET SCH2401 General-Purpose Switching Device Applications Features • • • • • The SCH2401 incorporates two elements in the same package which are N-channel MOSFETs, thereby enabling


    Original     		PDF SCH2401 EN8975 SCH2401 89754

    SB0503EC

    Abstract: No abstract text available
    Text: SB0503EC Ordering number : ENA0414 SANYO Semiconductors DATA SHEET SB0503EC Low IR Schottky Barrier Diode 30V, 0.5A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • Low switching noise.


    Original     		PDF SB0503EC ENA0414 A0414-3/3 SB0503EC

    A0559

    Abstract: VEC2815
    Text: VEC2815 注文コード No. N A 0 5 5 9 三洋半導体データシート N VEC2815 MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・DC / DC コンバータ用。


    Original     		PDF VEC2815 900mm2 N2906PE TC-00000344 A0559-1/6 IT09872 1000k IT10608 A0559 VEC2815

    2SC6118LS

    Abstract: 2sc6118
    Text: 2SC6118LS Ordering number : ENA0578A SANYO Semiconductors DATA SHEET NPN Triple Diffused Planar Silicon Transistor 2SC6118LS Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).


    Original     		PDF 2SC6118LS ENA0578A A0578-4/4 2SC6118LS 2sc6118

    2044B

    Abstract: 2SC5823 N2906 2sc582
    Text: 注文コード No. N 7 7 8 5 2SC5823 三洋半導体データシート N 2SC5823 特長 NPN 三重拡散プレーナ形シリコントランジスタ スイッチング電源用 ・高耐圧である。 ・スイッチングスピードが速い。 ・ASO が広い。


    Original     		PDF 2SC5823 IT06217 IT06665 IT06222 2044B 2SC5823 N2906 2sc582

    BC177 NPN transistor

    Abstract: BC178 TRANSISTOR bc108 bc325 bf179 BF177 transistor NPN BC178 applications of Transistor BC108 BC326 BFQ35
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra


    OCR Scan     		PDF BCW35GP. BFQ36 BF257/8/9 BFQ37 2N2218 2N2904 2N2218A 2N2904A 2N2219 2N2905 BC177 NPN transistor BC178 TRANSISTOR bc108 bc325 bf179 BF177 transistor NPN BC178 applications of Transistor BC108 BC326 BFQ35

    N2907

    Abstract: ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189
    Text: PNP GENERAL PURPOSE TA B LE2 PNP SILICO N PLA N A R G E N E R A L P U R P O S E T R A N S IS T O R S The devices shown in this table are general purpose transistors designedfor small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


    OCR Scan     		PDF BCY70 2N2605 2N2604 ZT181 ZT182 BCY78 BCY58 BCY72 ZT180 ZT187 N2907 ZT152 N2904 2N2102 2N4036 BC141 BC161 BCY65E BCY77 ZT189

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF

    BF177

    Abstract: BC312 BF178 BF179 2N4260 BC142 2N3576 BFT39 2N3829 BF338
    Text: 7 Metal Can High Current NPN Amplifiers Case Outlines Maximum ratinas Device Type BFT39 BFT40 BFT41 BFY50 BFY51 BFY52 ¡5 o £L NPN NPN NPN NPN NPN NPN BV BV BV Case CBO CEO EBO ICM mA V V V T039 T039 T039 T039 T039 T039 90 70 60 80 60 40 80 60 50 35 30 20


    OCR Scan     		PDF BFT39 BFT40 BFT41 BFT29 BFT30 BFT31 BFY50 BFY51 BFY52 BFT53 BF177 BC312 BF178 BF179 2N4260 BC142 2N3576 2N3829 BF338

    Transistor BC177

    Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 Transistor BC177 2N2475 audio BC108 2N1131 2N1132 2N4037 BC177

    N706A

    Abstract: 2N2368 2N2475 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177
    Text: NPN GENERAL PURPOSE - Continued Type 2 N3053 Max Vc b V c e O ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at Pto t at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO-39 2N4037 2N696


    OCR Scan     		PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 N706A 2N2368 2N2475 2N1131 2N1132 2N4037 BC177

    C736

    Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


    OCR Scan     		PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C736 C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633

    C495 transistor

    Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra


    OCR Scan     		PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor

    N2905

    Abstract: N2907 N2905A 2N2219 transistor 2N2102 2N2218A 2N2219A 2N2221A 2N2904A 2N2906A
    Text: PNP SWITCHING T A B LE 4 SILICO N PLA N A R M EDIUM AN D HIGH SP E E D SW ITCH IN G T R A N S IS T O R S Type V c EO Max VcE sat at hFE f j Min at at Switching Times (M ax) at n 1 The devices shown in this table are characterised for general medium voltage, medium and


    OCR Scan     		PDF ZT189 T0-18 2N4036 2N2102 2N2904A 4BCY79 BCY59 N2904 2N2218 N2905 N2907 N2905A 2N2219 transistor 2N2102 2N2218A 2N2219A 2N2221A 2N2906A

    2N2222n

    Abstract: 2n3053A complementary 2N2017 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2897 2N2193A
    Text: TYPE NO. P O LA R ITY Medium Power Amplifiers and Switches CASE H MAXIMUM RATINGS Pd mW •c V CEO (A) (V) 1000 800 1000 1000 1 0.5 1 11 FE V CE(SAT) max 'c VC E (V) (V) 'c Cob COM PLE­ max M ENTARY (MHz) (pF) T YPE fT mki min max ImAI 60 50 65 65 50 100


    OCR Scan     		PDF 2N2017 2N2102 2N4036 2N2102A 2N2192 2N2192A 2N2192B 2N2193 2N2193A 2N2907 2N2222n 2n3053A complementary 2N2897

    2N2219 2N2905

    Abstract: BF177 BF178 BF338 bf179 BC312 BF337 BFT37 BF336 bc143
    Text: Metal Can Complementary Pairs BV Case A M edium Current Am plifiers &• Sw itches Maximum ratin ps | Device Type Polarity Core Drivers b BV BV hFE1 CBO CEO EBO ICM HFE2 Ic fT min. Ic V V V mA mA min. max. mA min. max. M H z V C E sat) IC Max. ton Max.


    OCR Scan     		PDF 2N3724A 2N3725A 2N3244 BF257 BFQ36 BF257/8/9 BFQ37 2N2218 2N2904 2N2218A 2N2219 2N2905 BF177 BF178 BF338 bf179 BC312 BF337 BFT37 BF336 bc143

    2N2368

    Abstract: 2N2475 2n2369 2N2476 2N2220 N2904 2N2218 2N2219 2N2221 2N2222
    Text: NPN SW ITCHING - continued Type Max VcEO lc V mA Max VcE sat at V hFE >C mA >B mA Min at Max 'c mA Switching Times (Max) at f j Min at lc MHz mA toff ns ton ns lc Package Comple­ ment mA 30 1000 0 -35 150 15 40 150 50 50 55* 360* 150 TO-39 2N2218 30 800 0 -4


    OCR Scan     		PDF BFY51 2N2218 N2904 2N2219 2N2905 2N2220 2N2221 N2906 2N2222 2N2907 2N2368 2N2475 2n2369 2N2476 N2904