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Panasonic Electronic Components 2SC603600L TRANS NPN 12V 0.5A SSSMINI3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC603600L	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	2SC603600L	Digi-Reel			1	1 $0.15 10 $0.15 100 $0.15 1000 $0.15 10000 $0.15	Buy Now
	2SC603600L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components 2SC6036G0L TRANS NPN 12V 0.5A SSSMINI3
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DigiKey	2SC6036G0L	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	2SC6036G0L	Digi-Reel			1	1 $0.41 10 $0.41 100 $0.41 1000 $0.41 10000 $0.41	Buy Now
	2SC6036G0L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components 2SC6037J0L TRANS NPN 12V 0.5A SSMINI3
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DigiKey	2SC6037J0L	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	2SC6037J0L	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	2SC6037J0L	Digi-Reel			1	1 $0.17 10 $0.17 100 $0.17 1000 $0.17 10000 $0.17	Buy Now
Toshiba America Electronic Components 2SC6033(TE85L,F) Trans GP BJT NPN 50V 2.5A 1000mW 3-Pin TSM T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SC6033(TE85L,F)		3,547		248	1 - 10 - 100 - 1000 $0.1146 10000 $0.1115	Buy Now
Chip1Stop	2SC6033(TE85L,F)	Cut Tape	3,547			1 - 10 $0.123 100 $0.102 1000 $0.0917 10000 $0.0892	Buy Now

2SC603 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC603	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC603	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC603	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC603	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SC603	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SC603	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC603	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC603	NEC	Bipolar Dual Transistor / FET / Dual FETs	Scan	PDF
2SC6033	Toshiba	Silicon NPN transistor for high-speed switching, DC-DC converter and strobe flash applications	Original	PDF
2SC6034	Toshiba	Transistor Silicon NPN Triple Diffused Type	Original	PDF
2SC6036	Panasonic	Transistor for general amplification. Complementary to 2SA2162	Original	PDF
2SC603600L	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 12VCEO 500MA SSSMINI-3	Original	PDF
2SC6036G0L	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 12VCEO 500MA SSSMINI-3	Original	PDF
2SC6037J	Panasonic	Transistor for general amplification. Complementary to 2SA2161J	Original	PDF

2SC6037J0L	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 12VCEO 500MA SSMINI-3	Original	PDF

2SC603 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA2161J Abstract: 2SC6037J Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2161J 1.00±0.05 • Features Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)	Original	PDF	2002/95/EC) 2SC6037J 2SA2161J 2SA2161J 2SC6037J
2SA2162 Abstract: 2SC6036 2SC603 Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05	Original	PDF	2002/95/EC) 2SA2162 2SC6036 2SA2162 2SC6036 2SC603
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2162G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic	Original	PDF	2002/95/EC) 2SC6036G 2SA2162G
Untitled Abstract: No abstract text available Text: 2SC6033 東芝トランジスタシリコンNPNエピタキシャル形 2SC6033 ○ 高速スイッチング用 ○ DC−DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 250~400 IC = 0.3A 直流電流増幅率が高い。	Original	PDF	2SC6033
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036 Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2162 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05	Original	PDF	2002/95/EC) 2SC6036 2SA2162
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC6036G • Features  Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic	Original	PDF	2002/95/EC) 2SA2162G 2SC6036G
2SA2161J Abstract: 2SC6037J 2SA21 Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2161J 1.00±0.05 • Features Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)	Original	PDF	2002/95/EC) 2SC6037J 2SA2161J 2SA2161J 2SC6037J 2SA21
2-7D101A Abstract: 2SC6034 2sc603 Text: 2SC6034 東芝トランジスタシリコンNPN三重拡散形 2SC6034 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 • 単位: mm スイッチング時間が速い。 : tf = 0.24 s 最大 (IC = 0.3 A)	Original	PDF	2SC6034 2-7D101A 2-7D101A 2SC6034 2sc603
Untitled Abstract: No abstract text available Text: 2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm • Low collector-emitter saturation: VCE sat = 0.18 V (max) • High-speed switching: tf = 38 ns (typ.) Characteristics Collector-base voltage Storage temperature range VCBO 100 V 80	Original	PDF	2SC6033
Untitled Abstract: No abstract text available Text: 2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm • Low collector-emitter saturation: VCE sat = 0.18 V (max) • High-speed switching: tf = 38 ns (typ.) Characteristics Collector-base voltage Storage temperature range VCBO 100 V 80	Original	PDF	2SC6033
2-7D101A Abstract: 2SC6034 2SC603 Text: 2SC6034 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6034 High-Speed, High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • Unit: mm High-speed switching: tf = 0.24 s max (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SC6034 2-7D101A 2SC6034 2SC603
2SC6033 Abstract: No abstract text available Text: 2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm Low collector-emitter saturation: VCE sat = 0.18 V (max) High-speed switching: tf = 38 ns (typ.) Characteristics Symbol Rating Unit VCBO 100 V VCEX 80 V VCEO 50 V VEBO 6 V DC IC 2.5	Original	PDF	2SC6033 2SC6033
2SC6034 Abstract: 2-7D101A C6034 Text: 2SC6034 東芝トランジスタシリコンNPN三重拡散形 2SC6034 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 • 単位: mm スイッチング時間が速い。 : tf = 0.24 s 最大 (IC = 0.3 A)	Original	PDF	2SC6034 2-7D101A 20070701-JA 2SC6034 2-7D101A C6034
SC-89 JEDEC Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 1.00±0.05 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)	Original	PDF	2002/95/EC) 2SA2161J 2SC6037J SC-89 JEDEC

2SA2162G Abstract: 2SC6036 Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2162G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic	Original	PDF	2002/95/EC) 2SC6036G 2SA2162G 2SA2162G 2SC6036
2SA21 Abstract: marking 2u 2SA2162 2SC6036 Text: Transistors 2SA2162 Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 0.40 (0.40) 0.80±0.05 1.20±0.05  Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open)	Original	PDF	2SA2162 2SC6036 2SA21 marking 2u 2SA2162 2SC6036
2SC6033 Abstract: No abstract text available Text: 2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm • Low collector-emitter saturation: VCE sat = 0.18 V (max) • High-speed switching: tf = 38 ns (typ.) Characteristics Collector-base voltage Storage temperature range VCBO 100 V 80	Original	PDF	2SC6033 2SC6033
2SC6037J Abstract: 2SA2161G 2SC6037G 2SC603 Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037G Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2161G • Package  Low collector-emitter saturation voltage VCE(sat)  SS-Mini type package, allowing downsizing of the equipment and automatic	Original	PDF	2002/95/EC) 2SC6037G 2SA2161G 2SC6037J 2SA2161G 2SC6037G 2SC603
2SA2162G Abstract: 2SC6036 2SC6036G Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6036G Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2162G • Package  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic	Original	PDF	2002/95/EC) 2SC6036G 2SA2162G 2SA2162G 2SC6036 2SC6036G
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162 Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC6036 Unit: mm 0.33+0.05 −0.02 • Features 0.10+0.05 −0.02 Unit Collector-base voltage (Emitter open)	Original	PDF	2002/95/EC) 2SA2162 2SC6036
2-7D101A Abstract: 2SC6034 iB21 Text: 2SC6034 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6034 High-Speed, High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.24 µs max (IC = 0.3 A) Maximum Ratings (Ta = 25°C)	Original	PDF	2SC6034 2-7D101A 2SC6034 iB21
Untitled Abstract: No abstract text available Text: 2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mm Low collector-emitter saturation: VCE sat = 0.18 V (max) High-speed switching: tf = 38 ns (typ.) Characteristics Symbol Rating Unit VCBO 100 V VCEX 80 V VCEO 50 V VEBO 6 V DC IC 2.5	Original	PDF	2SC6033 01gmitation,
2SC603 Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2161J 1.00±0.05 • Features VCEO Emitter-base voltage (Collector open) VEBO Collector current	Original	PDF	2002/95/EC) 2SC6037J 2SA2161J 2SC603
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2162G Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC6036G • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C	Original	PDF	2002/95/EC) 2SA2162G 2SC6036G

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2SC603 Price and Stock

Panasonic Electronic Components 2SC603600L

Panasonic Electronic Components 2SC6036G0L

Panasonic Electronic Components 2SC6037J0L

Toshiba America Electronic Components 2SC6033(TE85L,F)

2SC603 Datasheets (15)

2SC603 Datasheets Context Search

2SA2161J

2SA2162

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2SA2161J

2-7D101A

Untitled

Untitled

2-7D101A

2SC6033

2SC6034

SC-89 JEDEC

2SA2162G

2SA21

2SC6033

2SC6037J

2SA2162G

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2-7D101A

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2SC603

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