2SC916 Search Results

Contextual Info: 2SC916 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)100 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

B0139

Abstract: B0135 B0137 B0139-16 B0139-6 KT815B B0137-16 B0829 B01-35 B0139-10
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C 5 10 15 20 25 30 35 -40 45 50 60 - 65 70 75 80 85 90 95 Max Y(BR)CEO (A) (V) fT hFE Min Max (Hz) ICBO t, Max tf Max Po Max TOper Max (A) (s) (s) (W) (Oe) 4.4 4.4 4.4 11 11 7.0 1.2 10 20 10 7.0 14 8.0 8.0 8.0

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SC946

Abstract: 2SC968 2SC911 2SC901 2SC935 2SC917 2SC901A 2SC919 2SC931 2SC914
Contextual Info: Page 1 of 3 Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 50W 2SC901 200 6 5A 150 25 4 5A 50* (Tc=70ºC)

2SC827

Abstract: 2SC945L 2SC1030 2SC923 2SC1044 2sc1090 2SC915 2SC914 2SC850 2SC829
Contextual Info: - 100 - n Ta=25‘ C , *EPtéTc=25£C i± 2SC827 £ MS SW/LF A Vç r o VcEO IcCDC) Pc Pc* (V) (V) (A) (W) (W) I.CBO. (wax) lu A) Vcb (V) n . hF E (min) & w (Ta=25tC ) ^ (max; Ic / ÏE (A) VCE (V) (V) 5 0. 002 0.05 2SC828A fâT A 45 45 0.05 0.4 130 520 5