2SD111 Search Results

vebo

Abstract: 2SD1119
Contextual Info: Transistors SMD Type Silicon NPN epitaxial planar type 2SD1119 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol

marking TQ

Abstract: 2SD1119 marking 3A sot-89
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1119 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low

Hitachi DSA00279

Contextual Info: 2SD1113 K Silicon NPN Triple Diffused Application Igniter Outline Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Collector current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1119 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ 4.0+0.25 –0.20 • Low collector-emitter saturation voltage VCE(sat)

2SD1119

Contextual Info: Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the

2SD1119

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ ue pl d in an c se ed lud

2sd111

Abstract: ic 2 bo 565 2SD111-M 100V7
Contextual Info: 2SD111 NPN POWER TRANSISTOR General Purpose Amplifier and Switching Applications - A -j"*— B — "j J i i i- ~ r - 1— 5 i 2 i t LU EE < D— F - H CO z o w 2 UJ DIM MIN A B C D E F G H J - K L M - 6,35 0,96 29,90 10,69 5,20

Contextual Info: 2SD1117-09 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD1118

Abstract: 5A Solid State RELAY IC
Contextual Info: 2SD1118 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING Outline Drawings Features TO-220AB High speed switching High D.C. current gain Low saturation voltage High reliability Applications Switching regulators DC-DC converter 1 : Base

Contextual Info: Transistors IC SMD Type Product specification 2SD1119 Features Low collector-emitter saturation voltage VCE sat . Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

2SD1119

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1119 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 3˚ M Di ain sc te on na

2SD1111

Abstract: 2SD1111 Datasheet
Contextual Info: Ordering number:EN751C NPN Epitaxial Planar Silicon Darlington Transistor 2SD1111 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2003B [2SD1111] Features 5.0 4.0

2Sb849

Abstract: 2SD1110
Contextual Info: SavantIC Semiconductor Product Specification 2SB849 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD1110 ·Wide area of safe operation · APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN

2SC2802

Abstract: 2SC3626 2SC3870 2SD2185 2SC4977 2SC3124 2sc3265 2sc3571 2SC4161 2SC4335
Contextual Info: - 204 - m € Type No. it € Manuf. 2SC 4975 fô T 2SC 4976 = 2SC 4977 ^ x±w* 2SC 4981 S r c 2SC 4983 h n 2SC 4984 h n h a n SANYO 2SC4269 T O SHIBA m NEC 2SC3124 ÍL HITACHI x ± FUJITSU a fö T MA T S U S H I T A 2SC2736 2SD1112 2SC4203 2SC2802 2SC4161

Contextual Info: 2SD1114 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220AB Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating C ollector to base voltage ^C B O 400 Collector to em itter voltage Emitter to base voltage

2SB849A

Abstract: 2SD1110A
Contextual Info: Inchange Semiconductor Product Specification 2SB849A Silicon PNP Power Transistors • DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1110A ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier applications PINNING

Contextual Info: 2SD1115 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220A B l ì 1 1. Base 2. C ollector (Flange) 3. Emitter 1 2 3 4.5 k£2 (Typ) 250 £2 (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25 °C) = Item Symbol Ratings

Contextual Info: 2SD1113 K Silicon NPN Triple Diffused HITACHI Application Igniter Outline T O -2 2 0 A B 2 II J I 1 1 B a se 2 C o lle c to r j 2 , 3 (F la n g e ) E m itte r -M -Î K t I t ^ . r x 1 1 _j i—wv—A—vv\—+-1 6 ki3 4 5 0 Í1 (Typ) (Typ) ¿ 3 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SD1115 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220AB Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings C ollector to base voltage ^C B O 400 Collector to em itter voltage Emitter to base voltage

2SD1111

Abstract: ITR09955 ITR09956 ITR09957 ITR09958 ITR09959 20u5
Contextual Info: Ordering number:ENN751C NPN Epitaxial Planar Silicon Darlington Transistor 2SD1111 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2003B [2SD1111] Features 5.0

2SD1113

Contextual Info: 2SD1113 K Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 6 kΩ (Typ) 450 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V

2SD1111

Abstract: BA 7511
Contextual Info: Ordering number: EN 751C N o tó le _ 2SD1111 N P N Epitaxial Planar Silicon Darlington Transistor SANYO Driver Applications Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . High DC current gain 5000 or greater .

2SD1110

Abstract: 2SB849
Contextual Info: SavantIC Semiconductor Product Specification 2SD1110 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SB849 ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN