2SC3265 Search Results

Contextual Info: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3265 LOW FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm POWER SWITCHING APPLICATIONS. + Q5 2.5— Œ3 FEATURES: . High DC Current Gain : hfE=100~320 . Low Saturation Voltage : VcE sat =0.4V (Max.) (IC=500tnA, lB=20mA) . Suitable for Driver Stage of Small Motor

Contextual Info: MCC TM Micro Commercial Components 2SC3265-O 2SC3265-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates

2SC3265-O

Abstract: 2sc3265
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SC3265-O 2SC3265-Y Features • Power switching application x Complementary to 2SA1298 x Low frequency power amplifier application

2SC3216

Abstract: 2SC3217-M 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251
Contextual Info: - 150 - Ta=25t , *EPÍÍTc=25t;) m 2SC3214 2SC3215 2SC3216 2SC3217—M 2SC3218-M 2SC3225 2SC3233 2SC3242 2SC3242A 2SC3243 2SC3244 2SC3245 2SC3245A 2SC3246 2SC3247 2SC3249 2SC3250 2SC3251 2SC3253 2SC3254 2SC3255 2SC3256 2SC3257 2SC3258 2SC3263 2SC3264 2SC3265

Contextual Info: 2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications • • • Unit: mm High DC current gain: hFE (1) = 100 to 320 Low saturation voltage: VCE (sat) = 0.4 V (max)

SMD MARKING ey

Abstract: smd npn eY 2SC3265 hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3265 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High DC current gain: hFE 1 = 100320. 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low saturation voltage: VCE (sat) = 0.4 V (max)

Contextual Info: MCC TM Micro Commercial Components 2SC3265-O 2SC3265-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

2SA1298

Abstract: 2SC3265
Contextual Info: TO SHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LO W FREQUENCY PO W ER AM PLIFER APPLICATIONS PO W ER SWITCHING APPLICATIONS + 0.5 High DC Current Gain : hjpg (i) = 100~320 Low Saturation Voltage : V qe (sa^) = 0.4 V (Max.)

2SA1298

Abstract: 2SC3265
Contextual Info: 2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE (1) = 100~320 · Low saturation voltage: VCE (sat) = 0.4 V (max) · Complementary to 2SA1298

Contextual Info: MCC TM Micro Commercial Components 2SC3265-O 2SC3265-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

Contextual Info: 2SC3265LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 Complement to 2SA1298LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector Current:Ic=500mA o Collector Dissipation:Pc=225mW Tc=25 C 0.4

2SA1298

Abstract: 2SC3265
Contextual Info: TO SH IBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS 2 .5 0.5 0.3 + - + High DC Current Gain : hjpg (1) —100~320 Low Saturation Voltage : Vqe (sa^) = 0.4 V (Max.)

25 V 500mA TRANSISTOR SOT23

Abstract: 2SC326
Contextual Info: 2SC3265LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 1 2 Complement to 2SA1298LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector Current:Ic=500mA o 2.4 1.3 0.4 0.95 0.95 2.9 1.9 Collector Dissipation:Pc=225mW Tc=25 C Unit:mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

Contextual Info: 2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications • • • Unit: mm High DC current gain: hFE (1) = 100~320 Low saturation voltage: VCE (sat) = 0.4 V (max)

Contextual Info: TO SHIBA 2SC3265 TOSHIBA TRANSISTOR j SILICON NPN EPITAXIAL TYPE PCT PROCESS ç 3 7 fi R Unit in mm LO W FREQUENCY PO W ER AM PLIFER APPLICATIONS PO W ER SWITCHING APPLICATIONS + 0.5 2.5-0.3 High DC Current Gain : hpg (j) = 100~320 Low Saturation Voltage : V q e (say = 0.4 V (Max.)

2SA1298

Abstract: 2SC3265
Contextual Info: 2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications • • • Unit: mm High DC current gain: hFE (1) = 100~320 Low saturation voltage: VCE (sat) = 0.4 V (max)

2SC3265

Abstract: 2SA1298 01mAIC
Contextual Info: 2SC3265 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3265 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • コレクタ･エミッタ間飽和電圧が低い。

Contextual Info: Reliability Tests Report Product Name: 2SC3265 Package Name: S-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1298

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1298 Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATIONS. +Û5 2.5 — a 3 FEATURES: . High DC Current Gain : hpE=100~-320 . Low Saturation Voltage : VcE sat =-0-4V(Max.) (Ic=-500mA, lB=-20mA) . Suitable for Driver Stage of Small Motor

Contextual Info: NJM2529 COLOR TFT SIGNAL PROCESSOR • PACKAGE OUTLINE ■ GENERAL DESCRIPTION The NJM2529 is a color TFT signal processor. It contains all function, like as Y/C separator circuit, color signal de-modulator, synchronous separate circuit, RGB interface, side

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.