2SD1221 TOSHIBA Search Results

2SD1221 TOSHIBA Result Highlights (5)

Part	Manufacturer	Description
TCR3DG28	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 300 mA, WCSP4E
TCKE812NA	Toshiba Electronic Devices & Storage Corporation	eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B
TK2R4A08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
CUZ30V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 30 V, USC

2SD1221 TOSHIBA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)	Original	2SD1221 2SB906	PDF
2sd1221 toshiba Abstract: D1221 2SB906 2SD1221 Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)	Original	2SD1221 2SB906 2sd1221 toshiba D1221 2SB906 2SD1221	PDF
2SB906 Abstract: 2SD1221 D1221 Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)	Original	2SD1221 2SB906 2SB906 2SD1221 D1221	PDF
D1221 Abstract: 2SB906 2SD1221 Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage · High power dissipation: PC = 20 W (Tc = 25°C) · Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)	Original	2SD1221 2SB906 D1221 2SB906 2SD1221	PDF
Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)	Original	2SD1221 2SB906	PDF
d1221 Abstract: 2SD1221 2SB906 Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)	Original	2SD1221 2SB906 d1221 2SD1221 2SB906	PDF
d1221 Abstract: 2SB906 2SD1221 Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)	Original	2SD1221 2SB906 d1221 2SB906 2SD1221	PDF
d1221 Abstract: 2SB906 2SD1221 Contextual Info: 2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)	Original	2SD1221 2SB906 d1221 2SB906 2SD1221	PDF
2SD1221 Abstract: 2sd1221 toshiba 2SB906 Contextual Info: 2SD1221 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Unit in mm Low Collector Saturation Voltage : VCE (sat) - °-4 v (Typ.) High Power Dissipation : Pg = 20 W	OCR Scan	2SD1221 2SB906 2SD1221 2sd1221 toshiba	PDF
2SB906 Abstract: 2SD1221 2sd1221 toshiba Contextual Info: TO SHIBA 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) High Power Dissipation : P0 = 2OW Complementary to 2SB906	OCR Scan	2SD1221 2SB906 2SD1221 2sd1221 toshiba	PDF
Contextual Info: 2SD1221 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. • • • Low Collector Saturation Voltage : Vc e (sat) = 0.4V (Typ.) High Power Dissipation P n = 9.0W Complementary to 2SB906	OCR Scan	2SD1221 2SB906	PDF
2SD1221 Contextual Info: TOSHIBA TRANSISTOR 2SD1221 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : vCE(sat)=0.4V(Typ.) (Ic=3A, Ir =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)	OCR Scan	2SD1221 2SB906 2SD1221	PDF
Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)	Original	2SB906 2SD1221	PDF
2SB906 Abstract: 2SD1221 B906 Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)	Original	2SB906 2SD1221 2SB906 2SD1221 B906	PDF

2SD1221 Abstract: 2SB906 Contextual Info: 2SD1221 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • Unit in mm Low Collector Saturation Voltage : VCE (sat) - °-4 v (Typ.) High Power Dissipation : Pg = 20 W	OCR Scan	2SD1221 2SB906 2SD1221	PDF
B906 Abstract: 2SB906 2SD1221 Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)	Original	2SB906 2SD1221 B906 2SB906 2SD1221	PDF
transistor B906 Abstract: B906 2SB906 2SD1221 B-906 Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)	Original	2SB906 2SD1221 transistor B906 B906 2SB906 2SD1221 B-906	PDF
Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)	Original	2SB906 2SD1221	PDF
2SD1221 Abstract: 2SB906 2sd1221 toshiba Contextual Info: TOSHIBA 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • Low Collector Saturation Voltage : VCE (sat) = °-4 v (TyP-) High Power Dissipation : Pg = 20 W	OCR Scan	2SD1221 2SB906 2SD1221 2sd1221 toshiba	PDF
Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)	Original	2SB906 2SD1221	PDF
Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 Unit: mm : VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)	Original	2SB906 2SD1221	PDF
Contextual Info: T O S H IB A 2SD1221 2 S D 1 221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION. • • • (A) Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) High Power Dissipation : P q = 20W	OCR Scan	2SD1221 2SB906 95MAX --50mA,	PDF
transistor B906 Abstract: 2SB906 7B1A B-906 B906 2SD1221 Contextual Info: 2SB906 TOSHIBA Transistor Silicon PNP Diffused Type PCT process 2SB906 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SD1221 • ハイブリッド対応外形の (B) 2SB906 (LB) もあります。	Original	2SB906 2SD1221 transistor B906 2SB906 7B1A B-906 B906 2SD1221	PDF
Contextual Info: TOSHIBA 2SD1221 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2 S D 1 221 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION U nit in mm 6.8MAX. (A) • 5.2 Low Collector Saturation Voltage ±0.2 c J : V CE (sat) = °-4 v (Typ.) • High Power Dissipation : P q = 20 W	OCR Scan	2SD1221 2SB906	PDF

2SD1221 TOSHIBA Search Results

2SD1221 TOSHIBA Result Highlights (5)

2SD1221 TOSHIBA Datasheets Context Search

2sd1221 toshiba

2SB906

D1221

d1221

d1221

d1221

2SD1221

2SB906

2SD1221

2SB906

2SD1221

B906

transistor B906

2SD1221

transistor B906