D1221 Search Results

Contextual Info: TetraFET D1221UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES F E G H D • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DW

D1221UK

Abstract: PLC 168 GT 1512
Contextual Info: TetraFET D1221UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES F E G H D • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1221UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES F E G H D • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS

PLC 168

Abstract: d1221 D1221UK
Contextual Info: TetraFET D1221UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES F E G H D • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DW

Contextual Info: TetraFET D1221UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES F E G H D • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DW

D2-470K

Abstract: D2-331K D2270 D4-270K D4182 D2-100K D2-120K D2-330K D2390 D4-121K
Contextual Info: HIGH CURRENT DRUM CORE INDUCTOR SERIES D 59 B ELECTRICAL CHARACTERISTICS - Inductance - Tolerance - Rated current - Testing procedures 1.0uH to 4700uH ± 20% for values under 10µH ± 10% for values above 10µH Obtained when Lo drops 10% typical Quadtech LCR 1750 Meter @ 1KHz

pm 3132 philips vco

Contextual Info: Quad PLL, Quad Input, Multiservice Line Card Adaptive Clock Translator AD9554-1 Data Sheet FEATURES APPLICATIONS Supports GR-1244 Stratum 3 stability in holdover mode Supports smooth reference switchover with virtually no disturbance on output phase Supports Telcordia GR-253 jitter generation, transfer, and

Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 E123456789ABC3DEEEFEF E E EEEEEEE E EEEEEEEE E E E7 EEE EEEFEFFE E!"#EE$!%&E" $'E EDE5BB 3 "*+,-E5B.B(E!C27/8ECF(EE"*+EF

D1221

Abstract: 2SD1221 2SB906
Contextual Info: D1221 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 D1221 ○ 低周波電力増幅用 単位: mm • 飽和電圧が低い。 • コレクタ損失が大きい。 : PC = 20 W (Tc = 25°C) • 2SB906 とコンプリメンタリになります。

d1711

Abstract: TRANSISTOR d3000 D2000 transistor d1541 transistor D2222 transistor D1411 D1541 transistor D1521 transistor D1521 transistor d1711
Contextual Info: D-1000 SERIES D-1000/D-2000/D-3000/D-4000 RS-232/RS-485-Compatible & Programmable Signal Conditioning Modules Introduction The D-1000 Series family of signal conditioning modules consists of the D-1000/2000 input modules and the D-3000/4000 output modules.

Contextual Info: SIEMENS BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7GHz F = 1.5dB at 900MHz n • Two (galvanic) internal isolated

Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code

2SB906

Abstract: 2SD1221 D1221
Contextual Info: D1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process D1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)

Contextual Info: VSC6134 Datasheet Features ● ● ● ● ● ● ● ● ● ● Two ITU-T G.709-compliant processors GR253-compliant STS192 section and line processor OTU synchronous and asynchronous mapping 10 GbE transport with RMON MIB per IEEE 802.3 ITU-T G.975 Reed Solomon encoder and decoder

Contextual Info: D1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process D1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)

D501

Abstract: B37741 k1060 smd tabellen Siemens Matsua Components Bestellnummern-Verzeichnis K0682 d5050 nf schaltungen NDKM B37872
Contextual Info: Inhaltsverzeichnis Bestellnummernverzeichnis Seite 5 8 Lieferübersicht Elektrische Kurzdaten 11 26 Standard-Chip-Kondensatoren Slim-Line Kondensatoren 27 55 Bedrahtete Kondensatoren, EIA-Standard Bedrahtete Kondensatoren, CECC-Standard 59 68 Allgemeine technische Angaben

DVP-40EH

Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
Contextual Info: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.

Contextual Info: Quad PLL, Quad Input, Multiservice Line Card Adaptive Clock Translator AD9554-1 Data Sheet FEATURES APPLICATIONS Supports GR-1244 Stratum 3 stability in holdover mode Supports smooth reference switchover with virtually no disturbance on output phase Supports Telcordia GR-253 jitter generation, transfer, and

2sd1221 toshiba

Abstract: D1221 2SB906 2SD1221
Contextual Info: D1221 TOSHIBA Transistor Silicon NPN Diffused Type PCT Process D1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Complementary to 2SB906 Unit: mm : VCE (sat) = 4.0 V (typ.) (IC = 3 A, IB = 0.3 A)

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

8a933

Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 C123456789ABCCCDEFEECD C CCC CCCCCCCCCCCC C CCCCC C CCCCCCCC C C EC7 CCC CCCDCDEDCC E!CEC"#$C  "EF%C&'C7C5BB 3 *+,C5BB('C-27.8C-D'CC )*CEEFED

q1257

Abstract: D1557 MARKING DIAGRAMS sob 214 intel schematics 150N150A intel 80386 SL MARKING CODE CKQ TI e7f01 J027 TDA 2035
Contextual Info: SIEM ENS Multichannel Network Interface Controller for HDLC MUNICH32 PEB 20320 CMOS 1C Version 3.4 1.1 Features • Serial Interface - Up to 32 independent communication channels. - Serial multiplexed full duplex input/output for 2048-, 4096-, 1544- or 1536-Kbit/s PCM

RW1092

Abstract: 1033R HL250C 0465R 05B60 DLMS Protocol 0x0431
Contextual Info: Advisory, Rev. 4 March 16, 2000 TDAT042G5 Device Advisory and Data Addenda for Version 1 of the Device Changes Made in This Update The changes made to AY99-013SONT-3 are listed on page 22. References to an advance data sheet are to the TDAT042G5 SONET/SDH 155/622/2488 Mbits/s Data Interface Advance Data Sheet, Rev. 3. Revision 4 is the

d1521

Abstract: D1352 D1332 D1701
Contextual Info: D1000 and D2000 OMEGABUS Digital Transmitters 250 $ Basic Unit MADE IN USA ߜ Complete Sensor To RS-232C or RS-485 Interface ߜ Input Modules for Thermocouples, RTDs, Voltages, Currents, Pulse and Frequency, and Bridge Inputs ߜ Isolated Inputs ߜ RS-485 Format Permits