2SD1250A Search Results

2SD1250

Abstract: 2SD1250A 2SB0928 2SB0928A 2SB928 2SB928A IC1102
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm

SJD00167CED

Abstract: 2SB0928 2SB0928A 2SB1250 2SD1250 2SD1250A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB0928, 2SB0928A Unit: mm 6.0±0.2 1.0±0.1

2SB0928

Abstract: 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A
Contextual Info: Power Transistors 2SB0928 2SB928 , 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 • Absolute Maximum Ratings TC = 25°C

2SB928

Abstract: 2SD1250 IC vertical panasonic 2SB928A 2SD1250A A628A
Contextual Info: 2SD1250, 2SD1250A Power Transistors 2SD1250, 2SD1250A Silicon NPN Triple-Diffused Planar Type • Package Dim ensions Power A m plifier TV V ertical D eflection O utput C om plem entary Pair with 2SB928, 2SB928A ■ Features • H ig h D C c u r r e n t g a in h t t a n d g o o d lin e a rity

Contextual Info: Power T ransistors 2SB928, 2SB928A 2SB928, 2SB928A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier TV Vertical Deflection Output Complementary Pair with 2SD1250, 2SD1250A •Features U nit i • High çollector-emitter voltage V ceo)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB0928, 2SB0928A Unit: mm 6.0±0.2 1.0±0.1

2SB0928

Abstract: 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A
Contextual Info: Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type ● ● ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE sat N type package enabling direct soldering of the radiating fin to

2SB928

Abstract: 18-SO 2SB928A 2SD1250 2SD1250A J1213
Contextual Info: Power T ransistors 2SB928, 2SB928A 2SB928, 2SB928A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier TV Vertical Deflection Output Complementary Pair with 2SD 1250, 2SD1250A Unit • i 8.7max. 6.5max. • Features • High çollector-emitter voltage V c e o

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB0928, 2SB0928A Unit: mm 6.0±0.2 1.0±0.1

Contextual Info: 2SD1250, 2SD1250A Power Transistors 2SD1250, 2SD1250A Silicon NPN Triple-Diffused Planar Type • Package Dim ensions Power A m plifier TV Vertical D eflection O utput Com plem entary Pair with 2SB928, 2SB928A ■ Features • High DC c u r re n t gain ht t an d good lin earity

2SB928

Abstract: 2SB928A 2SD1250 2SD1250A
Contextual Info: Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB928 and 2SB928A ● 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 High forward current transfer ratio hFE which has satisfactory linearity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm

2SB0928

Abstract: 2SB0928A 2SB1250 2SD1250 2SD1250A
Contextual Info: Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB0928, 2SB0928A Unit: mm 6.0±0.2 1.0±0.1 2 3.0+0.4 –0.2 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB0928

Abstract: 2SB0928A 2SB928 2SB928A 2SD1250 2SD1250A
Contextual Info: Power Transistors 2SB0928, 2SB0928A 2SB928, 2SB928A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 –150 VCEO V –180 Emitter to base voltage VEBO –6 V Peak collector current ICP –3 A Collector current IC –2 A Collector power TC=25°C

PA8080

Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
Contextual Info: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)

2SB909

Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB927

Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
Contextual Info: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

SD 1083

Abstract: SD1087 2SD1084 2sd1033 2SD1238 2sd1245 2SD987 2SD772B 2SD1706 2SD1134
Contextual Info: 230 - m « Type No. 2SD 1055 ^ =fet □— A 2SD 1059 ✓ 2SD 1060 2SD 1061 ^ 2SD 1062 2SD 1 0 6 3 * * é ?sn inß* , 2 SD 106 5 - 2 SD 1067 2SD 1069 € Manuf. m = = & E & E & E ß E Pß E # M 'S. 2SD 1070 2SD 1071 n±m m 2 SD 1072 m ±w » 2 SD 1073 « ± s «

2SB928

Abstract: 2SB928A 2SD1250 2SD1250A
Contextual Info: Power Transistors 2SB928, 2SB928A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 –150 VCEO –180 V Emitter to base voltage VEBO –6 V Peak collector current ICP –3 A Collector current IC –2 A Collector power TC=25°C dissipation

2SD1204

Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202