2SD127 Search Results

2SB950A

Abstract: 2SB950 2SD1276 2SD1276A
Contextual Info: Power Transistors 2SB950, 2SB950À Package Dimensions 2 SB9 5 0 , 2 SB9 5 0 A U nit * mm Silicon PNP Epitaxial Planar Darlington Type 4 4max. 10.2tnax, 5.7ma*. 2.9max. Power Amplifier, Switching Complementary Pair with 2SD1276, 2SD1276A •Features • High DC current gain

2SD1270

Abstract: npn 2a 2SB945
Contextual Info: Inchange Semiconductor Product Specification 2SD1270 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Large collector current IC ・Complement to type 2SB945 APPLICATIONS ・For power switching applications

2SB946

Abstract: 2SD1271
Contextual Info: Inchange Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1271 ・Low saturation voltage ・Good linearity of hFE ・High current APPLICATIONS ・For power switching applications

2SB951

Abstract: 2SB951A 2SD1277 2SD1277A
Contextual Info: Power Transistors 2SD1277, 2SD1277A 2SD1277, 2SD1277A Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Switching Complementary Pair with 2SB951, 2SB951A • Features • H ig h D C c u r r e n t g a in h r s • H ig h s p e e d s w i t c h in g

2SB0946

Abstract: 2SD1271
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)

2SB945

Abstract: 2SD1270
Contextual Info: SavantIC Semiconductor Product Specification 2SB945 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Large collector current IC ·Low collector saturation voltage ·Complement to type 2SD1270 APPLICATIONS ·For power switching applications

2SD1271

Abstract: 2SD1271A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1271 2SD1271A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SB946/946A ·Low collector saturation voltage ·Good linearity of hFE ·Large collector current IC APPLICATIONS

2SB946

Abstract: 2SD1271
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271 APPLICATIONS

2SB946A

Abstract: 2SD1271A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271A APPLICATIONS

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching 5.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 150 V Collector-emitter voltage (Base open)

2SD1272

Contextual Info: Power Transistors 2SD1272 Silicon NPN triple diffusion planar type Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating 5.5±0.2 7.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 200 V VCEO 150 V 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

2sd1878

Abstract: 2sd2339 2SD1876 2SD2333 2SC3887A 2SD1545 2SD2009 2SC3887 T M 2313 2SD1431
Contextual Info: - 264 - m « tt € Type No. Manuf. SANYO ÍL ÍL ±L ÍL 2SD1403 « 2SD1841 2SD 2298 2SD 2299 2SD 2300 2SD 2301 2SD 2302 « ± 2SD 2303 « d t« m±wM 2SD 2304 n = 36 2 TOSHIBA 2SC3887A m NEC B ÍI HITACHI ± Ü FU JITSU fâ T MATSUSHITA 2SD1274D ZSU56Ö

2SD1276

Abstract: G01BB 2SB950 2SB950A 2SD1276A
Contextual Info: Power Transistors 2SD1276, 2SD1276A 2SD1276, 2SD1276A Package Dim ensions Unit mm j 4.4max. I S ilico n N P N Triple-D iffused P la n a r Darlington Type b-+\ 2.9md\ Power A m plifier C om plem entary Pair with 2SB950, 2SB950A • Features 0 3 1 1 0 .1 •

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1277, 2SD1277A Silicon NPN triple diffusion planar type darlington Unit: mm • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VCBO 60 V 2SD1277 2SD1277A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1271A Silicon NPN epitaxial planar type For power switching • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO

2SD1273

Abstract: 2SD1273A 100 HFK
Contextual Info: Power Transistors 2SD1273, 2SD1273A 2SD1273, 2SD1273A Silicon NPN Triple-Diffused Planar Type • Package D im ensions High DC C urrent Gain Iife , Power A m plifier —< ■ Features Unit ! mm • High DC cu rren t gain (hFt) • Good linearity of DC c u rre n t gain Qife)

2SD1267

Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290

2SD1277A

Abstract: 2SB0951 2SB0951A 2SB951 2SB951A 2SD1277
Contextual Info: Power Transistors 2SD1277, 2SD1277A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB0951 2SB951 and 2SB0951A (2SB951A) Unit: mm • Parameter Symbol Collector to 2SD1277 base voltage 2SD1277A Collector to

2SD1274A

Abstract: 2SD1274B
Contextual Info: Power Transistors 2SD1274A, 2SD1274B Silicon NPN triple diffusion planar type Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Symbol 2SD1274A 14.0±0.5 Rating VCBO 2SD1274B 2.54±0.3 V 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F Package 250 1 2 3 2SD1274A

2SD1274

Abstract: 2SD1274A 2SD1274B
Contextual Info: Power Transistors 2SD1274, 2SD1274A, 2SD1274B Silicon NPN triple diffusion planar type For power amplification Unit: mm M Di ain sc te on na tin nc ue e/ d • Features Parameter Collector to base voltage Ratings 2SD1274B 0.7±0.1 4.2±0.2 7.5±0.2 16.7±0.3