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    2SD1270 Search Results

    2SD1270 Datasheets (14)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SD1270
    Panasonic Silicon NPN epitaxial planar type Original PDF 54.74KB 3
    2SD1270
    Panasonic NPN Transistor Original PDF 71.62KB 4
    2SD1270
    Wing Shing Computer Components NPN EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) Original PDF 71.22KB 1
    2SD1270
    Unknown Japanese Transistor Cross References (2S) Scan PDF 32.03KB 1
    2SD1270
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 87.44KB 2
    2SD1270
    Unknown Transistor Substitution Data Book 1993 Scan PDF 32.87KB 1
    2SD1270
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 116.55KB 1
    2SD1270
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 40.63KB 1
    2SD1270
    Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Scan PDF 111.36KB 2
    2SD1270
    Panasonic Silicon Medium Power Transistors Scan PDF 108.94KB 1
    2SD12700P
    Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 80VCEO 5A TO-220F Original PDF 4
    2SD1270P
    Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF 92.41KB 4
    2SD1270Q
    Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF 92.41KB 4
    2SD1270R
    Panasonic Silicon NPN Epitaxial Planar Type Power Transistor Original PDF 92.41KB 4
    SF Impression Pixel

    2SD1270 Price and Stock

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    Panasonic Electronic Components 2SD12700P

    TRANS NPN 80V 5A TO-220F-A1
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    DigiKey 2SD12700P Bulk 200
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    Samtec Inc TW-03-02-S-D-127-070

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    Newark TW-03-02-S-D-127-070 Bulk 1
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    Master Electronics TW-03-02-S-D-127-070
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    Samtec Inc TW-15-02-S-D-127-002

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    Newark TW-15-02-S-D-127-002 Bulk 1
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    Master Electronics TW-15-02-S-D-127-002
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    Sager TW-15-02-S-D-127-002
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    Emerson Process Management Q2SD127006-330-00

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    Bristol Electronics Q2SD127006-330-00 1,537
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    Emerson Process Management Q2SD127022-125-00

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    Bristol Electronics Q2SD127022-125-00 1,139
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    2SD1270 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SD1270

    Abstract: npn 2a 2SB945
    Contextual Info: Inchange Semiconductor Product Specification 2SD1270 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Large collector current IC ・Complement to type 2SB945 APPLICATIONS ・For power switching applications


    Original
    2SD1270 O-220Fa 2SB945 O-220Fa) 2SD1270 npn 2a 2SB945 PDF

    2SB945

    Abstract: 2SD1270
    Contextual Info: SavantIC Semiconductor Product Specification 2SB945 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Large collector current IC ·Low collector saturation voltage ·Complement to type 2SD1270 APPLICATIONS ·For power switching applications


    Original
    2SB945 O-220Fa 2SD1270 O-220Fa) 10MHz 2SB945 2SD1270 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130


    Original
    2002/95/EC) 2SB0945 2SB945) 2SD1270 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original
    2002/95/EC) 2SD1270 2SB0945 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130


    Original
    2002/95/EC) 2SB0945 2SB945) 2SD1270 PDF

    2SD1267

    Abstract: 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274
    Contextual Info: - 242 - Ta=25<C, *EP(äTc=25<C s ít 2SD1267 2SD1267A 2SD1268 2SD1269 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1273 2SD1273A 2SD1274 2SD1274A 2SD1274B 2SD1275 2SD1275A 2SD1276 2SD1276A 2SD1277 2SD1277A 2SD1279 2SD1280 2SD1286 2SD1286-Z 2SD1288 2SD1289 2SD1290


    OCR Scan
    2SD1267 2SD1267A 2SD1268 2SD1270 2SD1271 2SD1271A 2SD1272 2SD1279 SC-62 2SD1280 2SD1267 2SD1267A 2SD1271 2SD1273 2SD1273A 2SD1274 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 4.2±0.2 M Di ain sc te on na tin nc ue e/ d 16.7±0.3 14.0±0.5 Parameter Symbol


    Original
    2002/95/EC) 2SB0945 2SB945) 2SD1270 SC-67 O-220F-A1 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 14.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 130 V


    Original
    2002/95/EC) 2SD1270 2SB0945 SC-67 O-220F-A1 PDF

    PNP 100V 2A

    Abstract: 2SB945 2SD1270
    Contextual Info: Inchange Semiconductor Product Specification 2SB945 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Large collector current IC ・Low collector saturation voltage ・Complement to type 2SD1270 APPLICATIONS ・For power switching applications


    Original
    2SB945 O-220Fa 2SD1270 O-220Fa) 10MHz PNP 100V 2A 2SB945 2SD1270 PDF

    2SB0945

    Abstract: 2SB945 2SD1270
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)


    Original
    2002/95/EC) 2SB0945 2SB945) 2SD1270 SC-67 O-220F-A1 2SB0945 2SB945 2SD1270 PDF

    2SB0945

    Abstract: 2SB945 2SD1270
    Contextual Info: Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 2SB945 Unit: mm ● • 0.7±0.1 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage


    Original
    2SD1270 2SB0945 2SB945) 2SB0945 2SB945 2SD1270 PDF

    2SD1270

    Abstract: 2SB945
    Contextual Info: Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB945 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage


    Original
    2SD1270 2SB945 2SD1270 2SB945 PDF

    2SB0945

    Abstract: 2SB945 2SD1270
    Contextual Info: Power Transistors 2SB0945 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Unit: mm ● • 0.7±0.1 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage


    Original
    2SB0945 2SB945) 2SD1270 2SB0945 2SB945 2SD1270 PDF

    Contextual Info: Power J ransistors 2SD1270 2SD1270 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SB945 • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o lta g e • G ood lin e a rity of DC c u r r e n t gain


    OCR Scan
    2SD1270 2SB945 2sdi27o PDF

    2SB945

    Abstract: 2SD1270
    Contextual Info: Power Transistors 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage


    Original
    2SB945 2SD1270 120mA 2SB945 2SD1270 PDF

    2SB0945

    Abstract: 2SD1270
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)


    Original
    2002/95/EC) 2SD1270 2SB0945 SC-67 O-220F-A1 2SB0945 2SD1270 PDF

    2SB0945

    Abstract: 2SB945 2SD1270
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0945 (2SB945) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)


    Original
    2002/95/EC) 2SB0945 2SB945) 2SD1270 SC-67 O-220F-A1 2SB0945 2SB945 2SD1270 PDF

    2SB0945

    Abstract: 2SB945 2SD1270
    Contextual Info: Power Transistors 2SB0945 2SB945 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1270 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)


    Original
    2SB0945 2SB945) 2SD1270 SC-67 O-220F-A1 2SB0945 2SB945 2SD1270 PDF

    2SB0945

    Abstract: 2SD1270
    Contextual Info: Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 130 V Collector-emitter voltage (Base open)


    Original
    2SD1270 2SB0945 SC-67 O-220F-A1 2SB0945 2SD1270 PDF

    2SB0945

    Abstract: 2SD1270
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1270 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0945 5.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 • Absolute Maximum Ratings TC = 25°C Symbol Rating


    Original
    2002/95/EC) 2SD1270 2SB0945 SC-67 O-220F-A1 2SB0945 2SD1270 PDF

    2SD1270

    Abstract: 2SB945
    Contextual Info: SavantIC Semiconductor Product Specification 2SD1270 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Large collector current IC ·Complement to type 2SB945 APPLICATIONS ·For power switching applications


    Original
    2SD1270 O-220Fa 2SB945 O-220Fa) 10MHz 2SD1270 2SB945 PDF

    2SC1815

    Abstract: 2SC5400 2sc5290 2sc458 nec 2SC923 2SC1675 2SC945 2SC3421 2SC520A 2SC519A
    Contextual Info: - 90 - a s s T y p e No. M « Manuf. SANYO 3E TOSHIBA m b NEC B HITACHI ÍL * ± FUJITSU ffl fó T MATSUSHITA * 2SC 5 1 5A M 2 2SC2242 * 2S0 516 M $ 2SC3421 2SC2497 * * * 2SC 516A * 2: 2SC3421 2 SC2497A M ~S. 2SC2075 2SC 518 % 2 2SD718 2SD1270 * 2SC 518A %


    OCR Scan
    2SC2242 2SC3421 2SC2497 2SC2497A 2SC2075 2SD718 2SD1270 2SC1815 2SC5400 2sc5290 2sc458 nec 2SC923 2SC1675 2SC945 2SC3421 2SC520A 2SC519A PDF

    h 669A

    Abstract: 2SD1270 C-123 2SB945 2SD1271
    Contextual Info: 2SD1270 Power Transistors 2SD1270 Silicon NPN Epitaxial Planar Type Package Dim ensions Pow er Switching C om plem entary Pair with 2 S B 94 5 • Features • • • • 2.9max Low collector-em itter saturation voltage V ce <sao Good linearity of DC current gain (I i f e )


    OCR Scan
    2SB945 2SD1270 10MHz 2SD1271) tT32flSE h 669A 2SD1270 C-123 2SB945 2SD1271 PDF

    2SB945

    Abstract: 2SD1270
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB945 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1270 APPLICATIONS


    Original
    2SB945 2SD1270 -100V 10MHz 2SB945 2SD1270 PDF