2SD136 Search Results

Contextual Info: Product specification 2SD1366A SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Low frequency power amplifier 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃

Contextual Info: Transistors SMD Type Product specification 2SD1368 Features Low frequency power amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO

2SB1002

Abstract: 2SD1368 2SD789 Mark CA DSA003638
Contextual Info: 2SD1368 Silicon NPN Epitaxial ADE-208-1148 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1002 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25°C)

2SB1001

Abstract: 2SD1367 DSA003638
Contextual Info: 2SD1367 Silicon NPN Epitaxial ADE-208-1147 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25°C)

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SD1367 Features Low frequency power amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO

LC 500-S

Abstract: 2SD1368
Contextual Info: 2SD1368 Silicon NPN Epitaxial HITACHI Application • Low frequency power amplifier • Complementary pair with 2 S B 1 X 2 Outline UPAK 1 1. 2. 3. 4. 922 Base Collector Emitter Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

Hitachi DSA002756

Contextual Info: 2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline 2SD1366 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5

2SD1366A

Contextual Info: HITACHI 2SD1366A S il ic o n n p n e p it a x ia l LO W F R E Q U E N C Y P O W E R A M P L IF IE R Complementar/ pair with 2S31DD0A • 4.513.1 I a Wax 1.5 ± 0.1 .0.44 Max 4 L tf ö s L -■H 5 -—! IO {' X 5 T —■ t¿F~ I 0.53 Max 0.48 Max IM Cvj. I. B s ic

Contextual Info: Composite Transistors XN06542 XN6542 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing (Tr1) For medium-frequency amplification (Tr2) 5 6 2 1 (0.65) 3 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • 2SC1215 + 2SD1360

2SB992

Abstract: 2SD1362
Contextual Info: TOSHIBA {DI SC RE TE /OPT O} 9097250 TO SHIBA Sb :<Ow J T 9 3 3 <DISCRETE/O PTO 2SD1362 mm 1 U D E I ^ G T T E S G □ 0 0 7 c13B t. SILICON NPN TRIPLE DIFFUSED TYPE mm INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. .POWER AMPLIFIER APPLICATIONS.

2sb1000

Contextual Info: HITACHI 2SB1000 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1366 _ iíiiü \ ftsr-ix i r, t >i r . !r r ^ " 1. Bdw 2. CoHcUor 3. Hmiucr 4. CoÜcciu» Range {Diincii^suiik in mai) (UPAK) MAXIMUM CO LLECTO R DISSIPATIO N

PLZZ0004CA-A

Abstract: 2SB1002 2SB1002CJTL-E 2SD1368 2SB1002CJ
Contextual Info: 2SB1002 Silicon PNP Epitaxial REJ03G0660-0200 Previous ADE-208-1035 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD1368 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector

hitachi ad

Contextual Info: 2SD1366A Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline UPAK 1 2. Collector 3. Emitter 4. Collector Flange 915 2SD1366A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V cB O 30 V

2SB1001

Abstract: 2SD1367 2SD1367BCTR-E UPAK Marking BC
Contextual Info: 2SD1367 Silicon NPN Epitaxial REJ03G0785-0200 Previous ADE-208-1147 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector

Contextual Info: 2SD1366 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Hitachi DSA002756

Contextual Info: 2SD1366A Silicon NPN Epitaxial Application Low frequency power amplifier Outline 2SD1366A Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO

2SB1002

Abstract: 2SD1368 2SD1368-A
Contextual Info: HITACHI 2SB1002 SILICON PN P EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER Complementary pair with 2SD1368 J.SiO.t — 1. Haw 1. Collector 3. ¡.um ici 4. Collector Flange I (Dimensions in mai) (UPAK) MAXIMUM COLLECTOR DISSIPATION CURVE ABSO LU T E MAXIMUM RATINGS (Ta=25°C)

Contextual Info: IC Transistors SMD Type Silicon NPN Epitaxial 2SD1366A SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Low frequency power amplifier 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 1.Base 2.Collector

Hitachi DSA0076

Abstract: 2SB1002 2SD1368
Contextual Info: 2SB1002 Silicon PNP Epitaxial ADE-208-1035 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD1368 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1002 Absolute Maximum Ratings (Ta = 25°C)

2SB1002

Abstract: 2SD1368 DSA003720
Contextual Info: 2SB1002 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1368 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SB1002 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SB1000A

Contextual Info: HITACHI 2SB1000A-SILICON PNP EPITAXIAL LOW FREQ UEN C Y PO W ER AM PLIFIER Complementary pair with 2SD1366A -f \-< 1 Ba*c 2 O H e c to r -I” 3. Emitter 4 C oüeckw Fìar.gei > >Hr»« mmm} (UPAK MAXIMUM COLLECTOR DISSIPATION CURVE I A B SO LU T E MAXIMUM RATINGS iTs,=25’C)

2SD1366

Abstract: 2SD1366A Hitachi DSA00395
Contextual Info: 2SD1366A Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SD1366A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V

Contextual Info: 2SD1367 Silicon NPN Epitaxial REJ03G0785-0200 Previous ADE-208-1147 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector