2SD1366 Search Results

Contextual Info: Product specification 2SD1366A SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Low frequency power amplifier 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃

Hitachi DSA002756

Contextual Info: 2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline 2SD1366 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5

2SD1366A

Contextual Info: HITACHI 2SD1366A S il ic o n n p n e p it a x ia l LO W F R E Q U E N C Y P O W E R A M P L IF IE R Complementar/ pair with 2S31DD0A • 4.513.1 I a Wax 1.5 ± 0.1 .0.44 Max 4 L tf ö s L -■H 5 -—! IO {' X 5 T —■ t¿F~ I 0.53 Max 0.48 Max IM Cvj. I. B s ic

2sb1000

Contextual Info: HITACHI 2SB1000 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1366 _ iíiiü \ ftsr-ix i r, t >i r . !r r ^ " 1. Bdw 2. CoHcUor 3. Hmiucr 4. CoÜcciu» Range {Diincii^suiik in mai) (UPAK) MAXIMUM CO LLECTO R DISSIPATIO N

hitachi ad

Contextual Info: 2SD1366A Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline UPAK 1 2. Collector 3. Emitter 4. Collector Flange 915 2SD1366A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V cB O 30 V

Contextual Info: 2SD1366 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Hitachi DSA002756

Contextual Info: 2SD1366A Silicon NPN Epitaxial Application Low frequency power amplifier Outline 2SD1366A Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO

Contextual Info: IC Transistors SMD Type Silicon NPN Epitaxial 2SD1366A SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Low frequency power amplifier 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 1.Base 2.Collector

2SB1000A

Contextual Info: HITACHI 2SB1000A-SILICON PNP EPITAXIAL LOW FREQ UEN C Y PO W ER AM PLIFIER Complementary pair with 2SD1366A -f \-< 1 Ba*c 2 O H e c to r -I” 3. Emitter 4 C oüeckw Fìar.gei > >Hr»« mmm} (UPAK MAXIMUM COLLECTOR DISSIPATION CURVE I A B SO LU T E MAXIMUM RATINGS iTs,=25’C)

2SD1366

Abstract: 2SD1366A Hitachi DSA00395
Contextual Info: 2SD1366A Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SD1366A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V

2SB1000

Abstract: 2SB562 2SD1366
Contextual Info: HITACHI 2SB1000-SILICON PN P EPITAXIAL LOW FREQUENCY PO W ER AMPLIFIER Complementary pair with 2SD1366 1 8m ax 1.5 10.1 1. Babe 2. Colic citer - 3. [immer 4. Collector Funge (Puions ion* in min) (UPAK) MAXIMUM COLLECTOR DISSIPATION CURVE • ABSO LU T E MAXIMUM RATINGS (Ta=25°C)

Contextual Info: 2SD1366 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline UPAK 1 1. 2. 3. 4. Base Collector Emitter Collector Flange 2SD1366 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage ^CBO 25 V

2SB1000A

Abstract: 2SB562 2SD1366A LOPA
Contextual Info: HITACHI 2SB1000A-SILICON PNP EPITAXIAL LOW FREQUENCY PO W ER AM PLIFIER Complemenlary pair with 2SD1366A 3. Rase 2. Collector J . limitier 4. Collector Flange -U-L-o«" (Oimcnsiofli in mm) (UPAK) MAXIMUM COLLECTOR DISSIPATION CURVE !ABSO LU T E MAXIMUM RATINGS (Ta=25°C)

2SD1366

Abstract: 2SD1366A DSA003638
Contextual Info: 2SD1366A Silicon NPN Epitaxial ADE-208-1146 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SD1366

Abstract: Hitachi DSA0076
Contextual Info: 2SD1366 Silicon NPN Epitaxial ADE-208-1145 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

2SB1000

Abstract: D1366 V11J V11J HITACHI 2SD1366
Contextual Info: HITACHI 2SD1366-SILICON n p n e p it a x ia l LOW FREQUENCY POWER AMPLIFIER CoTipiomonlary pai.' with 2SB1000 !?.!{• t Ì ÇiiK<W I Fn.!W 4 ColI«mr ID iR K A im in nvn UPAK) MAXIMUM COLLECTOR DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS lTa=25°C>

2SD1366

Abstract: 2SD1366A
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD1388

Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25

2SD977

Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
Contextual Info: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K

2SC3444

Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
Contextual Info: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SD1366

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
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