2SD138 Search Results

2SB852K

Abstract: 2SD1383K T146
Contextual Info: 2SB852K Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K. 2SB852K

Contextual Info: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1

Contextual Info: Transistor 2SD1385 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 2.5±0.1 ● ● 1.0 (0.85) 0.45±0.05 * (Ta=25˚C) 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 400 V Collector to emitter voltage

Contextual Info: 2SD1383K h "7 > y 7. $ / J ransistors Xt:^^rV7^7V—^-ff^-/N-$-:E-;UKNPN y 'J-1 > & - 2SD1383K V _ > h > h 7 > y Z $ r a i i t e & 7 - i " j 3 - > 7 f f l/ H i g h G a in A m p . & S w itc h in g Epitaxial Planar Super Mini-Mold NPN Silicon Darlington Transistor

Contextual Info: / T ransistors 2S 1384 D 2SD1384 77 it : ^ J r '> ^ V - ^ N P N y ' j 3 > h 7 > y z $ 4,i l 2 :t# llllffl/Medium Power Amp. Epitaxial Planar NPN Silicon Transistor \r;£ 0 /D im e n s io n s U n it: mm) Vf^V'A'vli-r • 1) ICm = 2.5A Pc =0.75WCD±t±J*)o

Contextual Info: h 7 > y 7 ^ / T ransistors 2SD1382 7V - ^ NPN v U = l> Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • fc g • El/D im en sion s U nit: mm V r > J V :V d i- 7 - 1) vCEo = 8 0 V t ra i ' o 2) lc = 1 A 3) h FECO ') ~ T ') t - -f fr'& b 'o 4 ) V c e ( sat

Transistor 126m

Abstract: 2SD1381 QS 100 NPN Transistor
Contextual Info: RO HM CO LTD 40E D -ir 7020= =]=] OOOSflbO 7 B R H M m /Transistors 2SD1381 - 7 ^ 3 3 - OS' 2 S D 1 3 S 1 '> u = i> Freq. Power Amp. npn Epitaxial Planar NPN Silicon Transistor •

2SB852K

Abstract: 2SD1383K
Contextual Info: High-gain Amplifier Transistor 32V , 0.3A 2SD1383K Features 1) Darlington connection for high DC current gain. 2) Built-in 4k resistor between base and emitter. 3) Complements the 2SB852K. Dimensions (Unit : mm) 2SD1383K Packaging specifications

2SD1385

Contextual Info: Transistors 2SD1385 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm 2.5±0.1 1.0 (1.0) R 0.9 2.0±0.2 R 0.7 2.4±0.2 • Absolute Maximum Ratings Ta = 25°C 4.5±0.1 3.5±0.1 (1.5) 1.0±0.1 • High collector-base voltage (Emitter open) VCBO

2SD852K

Contextual Info: 2SB852K / 2SA830S 2SD1383K / 2SC1645S Transistors I High-gain Amplifier Transistor —32V, —0.3A 2SB852K / 2SA830S •F e a tu re s 1 ) Darlington connection fo r high DC current gain. 2 ) Built-in 4 k Q resistor between base and emitter. 3 ) Complements the 2SDl383Ki'2SD1645S.

2SD1384

Abstract: ST-103 2Sb1010 transistor
Contextual Info: / T ransistors 2SD1384 2SD1384 7^1/7 l ^ - ^ N P N y'j=i> b y > y Z 2 I If Epitaxial Planar NPN Silicon Transistor 4 ,f t ^ * £ llli£3/Mecliiim Power Amp. • fl-JfiTfjiESI/Dimensions Unit : mm 1) Ic m = 2.5A Pc = 0 7 5 W ( D * i U * o 2) VcE(sat) VCE(sat)=0.3V(Typ.)

2SD1863

Abstract: 2sd1733 2SD1898
Contextual Info: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F •F e a tu re s 1) High ►External dimensions (Units: mm) V ceo . V ceo = 8 0 V 2SD1898 2) High IC. Ic = 1A (DC) 4.5±g:? c+0.2 5 _ 0.1 3) Good hre linearity. 4) Low VcEfsat),

D1382

Abstract: D 1382 2SD1382 0550L
Contextual Info: h "7 > v 7 $ /Transistors 2SD1382 t \/~f \y>—"fYt NPN '>>;=!> h 7 > ' > Z $ Epitaxil Planar NPN Silicon Transistor l & i i^ ^ ^ j ii l if f l /L o w Freq. Power Amp. 2S D 1382 1) V CE o = 8 0 V t L ' „ 7. 8 ± 0 . 2 2.5 ± 0- 2 r 2) lc = 1 A t * ^ l ' u

4606

Abstract: 2SD1383K MJE447 Darlington npn darlington 1384 5000E-9
Contextual Info: SPICE PARAMETER 2SD1383K * 2SD1383K DARLINGTON NPN BJT model * Date: 2006/12/13 *C B E .SUBCKT 2SD1383K 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 1.350 R1 4 3 4k .MODEL Q1model NPN + IS=30.00E-15 + BF=400 + VAF=50 + IKF=.1221 + ISE=30.00E-15

2SD1383K

Abstract: 2SD1402 2SD1407 2SD1416 2SD1390 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380
Contextual Info: - 246 - Ta=25cC, *Ep(äTc=25‘C TJ 2SD1376K 2SD1377K 2SD1378 2SD1379 0Ä 2SD13S0 Cf — 2SD1381 2SD1382 2SD1383K 2SD1384 2SD1385 2SD139Q 2SD1391 2SD1392 2SD1394 2SD1395 2SD1396 2SD1397 2SD1398 2SD1399 □— A BÄ D— A n— A □— A O— A D — töT

2sc4137

Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Contextual Info: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638

D3S 59

Contextual Info: O a 2SD1383K / T ransistors b~7 U I O o O I V *-y > h > # * Epitaxial Planar NPN Silicon Transistor (Darlington) il/H ig h Gain Amp. • ¥ i% 1) • • Dimensions (Unit : mm) ? - ' ) > h > S » T lh F E 7 A 5 . h F E = 5 0 000 (Typ.) (at 100mA) i . i -S:?

Contextual Info: 2SB852K Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K External dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K. 2SB852K

2SD1385

Contextual Info: Transistors 2SD1385 Silicon NPN triple diffusion planar type For low-frequency output amplification Unit: mm • Features 2.5±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation *

2SD1383

Abstract: 2SA830S 2SB852K 2SC1645S 2SD1383K
Contextual Info: Transistors 2SB852K / 2SA830S 2SD1383K / 2SC1645S 96-118-B20 (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SD1380

Abstract: TRANSISTOR BV 32
Contextual Info: Is 7 > V £ /Transistors 2SD1380 7 ; I/ 7° b - * Jg NPN y V □ > b 7 > V 7. $ X kf * * y 2SD 1380 Epitaxial Planar NPN Silicon Transistor Freq. Power Amp. • ^ J fir H ilH /D im e n s io n s Unit : mm 1) VcEO= 32V, lc= 2A, Pc= 10W<D?A mt-iT’T&Zc 2) 2SB10091 =l > -f'J ? A 3 0

2SA830S

Abstract: 2SB852K 2SC1645S 2SD1383K
Contextual Info: Transistors 2SB852K / 2SA830S 2SD1383K / 2SC1645S 96-118-B20 (96-205-D20) 280

2SA830S

Abstract: 2SB852K 2SD1383K 2SD1645S T146
Contextual Info: 2SB852K / 2SA830S Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K / 2SA830S zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K / 2SD1645S.

2SD852

Abstract: 2SD1383K 2SA830S 2SC1645S T146 2SD852K
Contextual Info: 2SD1383K / 2SC1645S Transistors High-gain Amplifier Transistor 32V , 0.3A 2SD1383K / 2SC1645S zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD852K / 2SA830S. zExternal dimensions (Unit : mm)