2SD1409A Search Results

2SD1409A Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD1409A	Toshiba	TRANS DARLINGTON NPN 400V 6A 3(2-10R1A)	Original	PDF
2SD1409A	Unknown	NPN Transistor	Scan	PDF
2SD1409A	Toshiba	Silicon NPN triple duffused type transistor for high voltage switching, igniter applications	Scan	PDF
2SD1409A	Toshiba	TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE(DARLINGTON POWER)	Scan	PDF
2SD1409A(F)	Toshiba	2SD1409A - Darlington Transistors NPN 400V 6A Transistor	Original	PDF

2SD1409A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
d1409a Abstract: D1409 2SD1409A 2SD1409A equivalent Text: 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor	Original	PDF	2SD1409A d1409a D1409 2SD1409A 2SD1409A equivalent
d1409a Abstract: 2SD1409A Text: 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor	Original	PDF	2SD1409A d1409a 2SD1409A
D1409A Abstract: d1409 2SD1409A Text: 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor	Original	PDF	2SD1409A D1409A d1409 2SD1409A
d1409a Abstract: No abstract text available Text: 2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor	Original	PDF	2SD1409A SC-67 d1409a
d1409a Abstract: 2SD1409A Text: 2SD1409A シリコンNPN三重拡散形ダーリントン接続東芝トランジスタ 2SD1409A 通信工業用 ○ 高電圧スイッチング用単位: mm • 直流電流増幅率が高い。: hFE = 600 (最小) (VCE = 2 V, IC = 2 A) • ベース･エミッタ間に抵抗が内臓されております。	Original	PDF	2SD1409A SC-67 2-10R1A 20070701-JA d1409a 2SD1409A
d1409a Abstract: 2SD1409A 100-C3000 Text: 2SD1409A シリコンNPN三重拡散形ダーリントン接続東芝トランジスタ 2SD1409A 通信工業用 ○ 高電圧スイッチング用単位: mm • 直流電流増幅率が高い。: hFE = 600 (最小) (VCE = 2 V, IC = 2 A) • ベース･エミッタ間に抵抗が内臓されております。	Original	PDF	2SD1409A SC-67 2-10R1A d1409a 2SD1409A 100-C3000
STK411-230E Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for	Original	PDF	STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	PDF	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	PDF	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	PDF	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
2SK1045 Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373 Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100	Original	PDF	2SC642A O-204AA/TO-3: 2SC643 2N4030DIE 2C4030 2SC643A 2SK1045 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
2sC5200, 2SA1943 Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N Text: 製品カタログ 2010-4 東芝半導体製品カタログパワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4	Original	PDF	TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Text: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
45F122 Abstract: GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322 Text: 東芝半導体製品総覧表 2010 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	PDF	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 45F122 GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322
Untitled Abstract: No abstract text available Text: TO SHIBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS. 2SD1409A 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • • 1.1 M A X IM U M RATINGS (Ta = 25°C) EQUIVALENT CIRCUIT	OCR Scan	PDF	2SD1409A
2SD1409A Abstract: No abstract text available Text: TOSHIBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • 03.2 ±0.2 2.7±0.2 High DC Current Gain * = 600 (Min.)	OCR Scan	PDF	2SD1409A 2SD1409A
Untitled Abstract: No abstract text available Text: 2SD1409A TOSHIBA TO SHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 • 03.2 ± 0.2 2.7± 0.2 High DC Current Gain * = 600 (Min.)	OCR Scan	PDF	2SD1409A
Untitled Abstract: No abstract text available Text: 2SD1409A TO SHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 7<;r>iAfiqA INDUSTRIAL APPLICATIONS Unit in mm IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. 10 + 0.3 • • ç5 3.2± 0 .2 2 .7 1 0 .2 High DC Current Gain : hpg = 600 (Min.) (Vq e = 2V, I q = 2A)	OCR Scan	PDF	2SD1409A
2SD1409A Abstract: No abstract text available Text: 2SD1409A TO SH IBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 • = 600 (Min.) (VCE = 2 V, IC = 2 A) Monolithic Construction with Built-In Base-Emitter Shunt	OCR Scan	PDF	2SD1409A 2SD1409A
2SD1409A equivalent Abstract: 2SD1409A Text: TO SHIBA IGNITER APPLICATIONS. 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER HIGH VOLTAGE SWITCHING APPLICATIONS. • • High DC Current Gain : hpE = 600 (Min.) (V0 e = 2V, Ic = 2A) Monolithic Construction with Built-In Base-Emitter Shunt	OCR Scan	PDF	2SD1409A 2SD1409A equivalent 2SD1409A

Privacy Settings

2SD1409A Search Results

2SD1409A Datasheets (5)

2SD1409A Datasheets Context Search

d1409a

d1409a

D1409A

d1409a

d1409a

d1409a

STK411-230E

IGBT GT30F124

smd transistor h2a

GT30F124

transistor bc 245

2SA1941 amp circuit

2SK1045

2sC5200, 2SA1943

GT45F122

GT30J124

*45F122

Untitled

2SD1409A

Untitled

Untitled

2SD1409A

2SD1409A equivalent