2SD142 Search Results

2SD1429

Abstract: 2SC2482 ic 786
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPF 2SD1429 Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES: . High Voltage :V C go= 1500V . L o w Saturation Voltage :V c E s a t =4V (Typ.) . High Speed :tf=0.5/is (Typ.) . Glass Passivated Collector-Base Junction

2SD1427

Abstract: S2000A S2000
Contextual Info: 12 T0-3P(H) (BS) —3 O PACKAGE SERIES n; M CD > Application •c HOR. OUT * V CES Typo No. (Built-in Damper) 2SD1425 S2056 2.5 2.5 (V) 1500 *1500 3.5 2SD1426 (Built in Damper) S2054 2SD1431 (Built-in Damper) (Built-in Damper) (Built-in Damper) T G-25°C

2SD1428

Contextual Info: Inchange Semiconductor Product Specification 2SD1428 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H 1S package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV horizontal

Contextual Info: Transistors SMD Type Product specification 2SD1421 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO

2SD1420

Abstract: DSA003638
Contextual Info: 2SD1420 Silicon NPN Epitaxial ADE-208-1151 Z 1st. Edition Mar. 2001 Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1420 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423, 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423A • Features  Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SD1424

Contextual Info: Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage

2SB1030A

Abstract: 2SD1423 2SD1423A 2sB103
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030A • Package  Optimum for high-density mounting  Allowing supply with the radial taping

2SD1424

Contextual Info: Transistors 2SD1424 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 • Optimum for high-density mounting • Allowing supply with the radial taping • High forward current transfer ratio hFE 7.6

2SD1421

Abstract: 2SD1421EDTR-E 2SD1421EETR-E
Contextual Info: 2SD1421 Silicon NPN Epitaxial REJ03G0789-0200 Previous ADE-208-1152 Rev.2.00 Aug.10.2005 Application Low frequency power amplifier Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange)

2SD1426

Contextual Info: Inchange Semiconductor Product Specification 2SD1426 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H 1S package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV deflection

MARKING ED

Abstract: 2SD1421
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SD1421 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO

smd marking EA

Abstract: 2SD1420 marking ea
Contextual Info: Transistors SMD Type NPN Silicon epitaxial Transistor 2SD1420 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 120 V Emitter to base voltage

2SD1421

Abstract: 2SD142 lTa-25
Contextual Info: HITACHI 2SD1421-SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER t » H',1 2. CWIccfcM .V Enunci •í ctflccw S^DtnHÚai 1• i:.m> (UPAK ■ ABSOLUTE MAXIMUM RATINGS 11:1=25*0 Ile 111 Symbol MAXIMUM COLLECTOR DISSIPATION CURVE Unii 2SDI42I CoHcc tor to ba\c voltogc

1e1l

Abstract: 2SD1427 100 HFK
Contextual Info: 2SD1427 • ft • Ä ttfE T - f« . : v 0B0-1 5 0 0 V • : V C E Bat “ »v ( « * ) ( I C=4-A, I b - Ü Q A ) * 1y : t f- L O / io c ai/^^ . ( t t ± ) I CP- 4 A , i B i C a n d i — OSA ) . *< ?y —í/ . X t X * 9 * •f o Ä X S t t ( Tc “ 2 5 "C )

Contextual Info: Transistors 2SD1424 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 4.0±0.2 0.8 3.0±0.2 2.0±0.2 • Optimum for high-density mounting • Allowing supply with the radial taping • High forward current transfer ratio hFE 7.6

2sd1426 transistor

Abstract: 2SD1426
Contextual Info: 2SD1426 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR ` COLOR TV HORIZONTAL OUTPUT APPLICATIONS Damper Diode BUILT IN ! ! 2-16D3A High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (TA=25oC) Characteristic Collector-Base Voltage

2SD1425

Contextual Info: SavantIC Semiconductor Product Specification 2SD1425 Silicon NPN Power Transistors DESCRIPTION •With TO-3PH package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV deflection

2SD1427

Abstract: Power IC
Contextual Info: SavantIC Semiconductor Product Specification 2SD1427 Silicon NPN Power Transistors DESCRIPTION •With TO-3PH package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in large screen color

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1423 Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 • Package  Optimum for high-density mounting  Allowing supply with the radial taping

MZAC

Contextual Info: HITACHI 2SD1421 SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Ö J «: l Cv.MCv ;•.*» 5 I 4 O»«* U* UÍ>AK MAXIMUM COLLECTOR DISSIPATION CURVE ABSOLUTE MAXIMUM RATINGS (T;, 25 <) )itm ;Svrolx4Í C«l)ccior if» volujc . Collector current Collector peak cui icni

2SB1030

Abstract: 2SB1030A 2SD1423 2SD1423A
Contextual Info: Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 3.0±0.2 4.0±0.2 • Features Parameter Ta=25˚C Symbol Collector to 2SB1030 base voltage 2SB1030A Collector to

2SB1030

Abstract: 2SD1423
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1030 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SD1423 • Package  Optimum for high-density mounting  Allowing supply with the radial taping