2SD149 Search Results

2SD1496

Contextual Info: SavantIC Semiconductor Product Specification 2SD1496 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·High voltage power switching TV horizontal deflection output applications

Contextual Info: Power Transistors 2SD1499 2SD1499 Silicon PNP Triple-Diffused Planar Darlington Type High Power A m p lifier C om plem entary Pair w ith 2SB1063 • Package D im ensions U nit I mm 4 .4 m a x . 1 0 .2m ax. 5 .7 m a x . ■ Features 2.9max • V e r y g o o d lin e a rity o f D C c u r r e n t gain h HE

2SD1491

Abstract: S0426 14s6 RL-50 m1.0425 l0897 u236
Contextual Info: NEC Silicon Power Transistor r - 2SD1491Ü 3 ^ ; •X ; y 4 * - K, ’T — K r f êï f é v u / >f ^ # T H i “ - ' . } ; « *HB0 JÊfi! 1mm h > F m) uv h 7 ^ r 8.5 M A X . m i t M t « 2.8 M A X . ~4> 3 2 ± o i t ' t c CM % ft o +1 I T K i t i 7 ) T 'i a ,

2SD1491

Abstract: BH RV transistor
Contextual Info: 2SD 1491 2SD1491 N P N x e ^ + '> 7 ; H '> 'J h NPN Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier Low Speed Switching Industrial Use jim m 2SD1491Ü =i u 7 7 • *. i ', 7 - i- x P i ;S E * (± r ^ * - fall; *r 7 4 t - K¿ « « i ii r t lL i f -

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Symbol Rating Unit

2SB1063

Abstract: 2SD1499
Contextual Info: Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 5.5±0.2 2.7±0.2 Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −100 V Collector-emitter voltage (Base open)

Hitachi DSA002754

Contextual Info: 2SB1059 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1490 Outline 2SB1059 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –70 V Collector to emitter voltage

2SD349

Abstract: 2SB1059 2SD1490 2SD789
Contextual Info: HITACHI 2SD1490-SILICON NPN EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER Complementary pair with 2SB*059 -n « t. Eniner !' Cdl'ninf .1. Bi« <l>itnc HMD it» in n-r¡i> JEDECTO-92 MAXIMUM COLLECTOR DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SB1063

Abstract: 2SD1499
Contextual Info: SavantIC Semiconductor Product Specification 2SB1063 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1499 ·Wide area of safe operation ·High fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION

2SB1063

Abstract: 2SD1499
Contextual Info: Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −100 V Collector-emitter voltage (Base open) VCEO −100 V Emitter-base voltage (Collector open)

2SB1063

Abstract: 2SD1499
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1063 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Max)@IC= -3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1499 APPLICATIONS

2SB1059

Abstract: 2SD1490 2SD789 DSA003723 2sB105 Hitachi DSA003723
Contextual Info: 2SD1490 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1059 Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SD1490 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SB1063

Abstract: 2SD1499
Contextual Info: Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 100 V Collector-emitter voltage (Base open)

Contextual Info: 2SD1494 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.5k I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD1496

Contextual Info: Inchange Semiconductor Product Specification 2SD1496 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·High voltage power switching TV horizontal deflection output applications

Contextual Info: HITACHI 2SD1490-SILIC O N N PN EPIT A X IA L L O W F R io U E N C Y PO W K R T d W R U FIER Comptemertary pair wiîh 2S 8 Î 053 JE D E C TO-92 MAXIMUM COLLECTOR DISSIPATION CURVE • A B S O L U T E M AXIM UM R A T IN G S (Ta*2 5 "0 •¡s d m v o

2SB1063

Abstract: 2SD1499
Contextual Info: Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage

2SD1499

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD1499 TRANSISTOR NPN TO-220F FEATURES z Extremely satisfactory linearity of the forward current transfer ratio hFE z Wide safe operation area z High transition frequency fT

2SB1063

Abstract: 2SD1499
Contextual Info: JMnic Product Specification 2SB1063 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1499 ・Wide area of safe operation ・High fT APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1499 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1063 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: 2SD1499 NPN TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Extremely satisfactory linearity of the forward current transfer ratio hFE Wide safe operation area High transition frequency fT Full-pack package which can be installed to the heat sink with

2SD1497

Contextual Info: 2SD1497 SILICON NPN TRIPLE DIFFUSED NPN TV HORIZONTAL DEFLECTION OUTPUT Hi.Pmax vW .2 r 0. 1. ^ 2. 3. — X • Base ’ Collector i ; / ? ' E m i tt e r D i m e n s i o n s in mm (TO-3P) ABSOLUTE MAXIMUM RATINGS ( T a = 25°C ) 3S Symbol H x Unit 2SD 1497

2SD1497

Contextual Info: SavantIC Semiconductor Product Specification 2SD1497 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·High voltage power switching TV horizontal deflection output applications