2SB105 Search Results

2SB105 Datasheets (95)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SB105	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	38.46KB	1
2SB105	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.43KB	1
2SB105	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	46.04KB	1
2SB105	Unknown	Cross Reference Datasheet	Scan	PDF	34.22KB	1
2SB105	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	110.79KB	2
2SB105	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF	170.6KB	2
2SB105	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	89.3KB	1
2SB105	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	93.57KB	1
2SB105	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	35KB	1
2SB1050	Panasonic	Silicon PNP epitaxial planer type	Original	PDF	56.7KB	3
2SB1050	Panasonic	PNP Transistor	Original	PDF	47.02KB	3
2SB1050	Panasonic	Silicon PNP epitaxial planer type	Original	PDF	36.77KB	2
2SB1050	Various Russian Datasheets	Transistor	Original	PDF	84.39KB	8
2SB1050	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	39.41KB	1

2SB1050	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	105.17KB	2
2SB1050	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	36.3KB	1
2SB1050	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	127.7KB	1
2SB1050	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	42.89KB	1
2SB1050P	Panasonic	Silicon PNP Epitaxial Planar Type Transistor	Original	PDF	75.72KB	3
2SB1050Q	Panasonic	Silicon PNP Epitaxial Planar Type Transistor	Original	PDF	75.72KB	3

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Panasonic Electronic Components 2SB10540P TRANS PNP 100V 5A TOP-3F-A1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SB10540P	Bulk			120	1 - 10 - 100 - 1000 $1.82 10000 $1.82	Buy Now
Panasonic Electronic Components 2SB1052 TRANSISTOR,BJT,PNP,60V V(BR)CEO,2A I(C),SOT-186
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Quest Components	2SB1052		35			1 - 10 - 100 - 1000 - 10000 -	Buy Now

2SB105 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SB1052 Abstract: 2SD1480 IC 4090 Contextual Info: Inchange Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1480 ・Low collector saturation voltage APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION	Original	2SB1052 O-220Fa 2SD1480 2SB1052 2SD1480 IC 4090	PDF
2SB1055 Abstract: 2SD1486 Contextual Info: JMnic Product Specification 2SB1055 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1486 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications	Original	2SB1055 2SD1486 -120V; -20mA 2SB1055 2SD1486	PDF
2SB1052 Abstract: 2SD1480 8MA11 Contextual Info: Power T ransistòrs 2SB1052 2SB 1052 Silicon PNP Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD1480 • Features . • High DC c u rre n t gain I i f e and good linearity • Low collector-eim itter saturation voltage (VcEcsao)	OCR Scan	2SB1052 2SD1480 b13Efl55 0QlbS13 2SB1052 2SD1480 8MA11	PDF
2SB1052 Abstract: 2SD1480 Contextual Info: SavantIC Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1480 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1	Original	2SB1052 O-220Fa 2SD1480 2SB1052 2SD1480	PDF
2SD1488 Abstract: 2SB1057 Contextual Info: SavantIC Semiconductor Product Specification 2SB1057 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1488 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications	Original	2SB1057 2SD1488 -150V; -20mA 2SD1488 2SB1057	PDF
2SB1056 Abstract: 2SD1487 Contextual Info: SavantIC Semiconductor Product Specification 2SB1056 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1487 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications	Original	2SB1056 2SD1487 -140V; -20mA 2SB1056 2SD1487	PDF
Contextual Info: Transistors 2SB1050 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 1.0 (1.0) (1.5) 4.5±0.1 2.0±0.2 R 0.9 R 0.7 3.5±0.1 (1.5) 4.1±0.2 • Absolute Maximum Ratings Ta = 25°C 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud	Original	2SB1050	PDF
Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO	Original	2SB1054 2SD1485	PDF
Contextual Info: Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 10.0±0.2 0.7±0.1 Features 4.2±0.2 5.5±0.2 2.7±0.2 TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage	Original	2SD1480 2SB1052	PDF
2SD1488 Abstract: 2SB1057 7A20 33SI 2sB105 Contextual Info: 2SD1488 2 SD 1 4 8 8 U H V NPN /' —•^■Jl^/Si N P N T rip le D iffused P lanar Power Amplifier i] /'Complementary Pair with 2SB1057 U n it : mm 5 .2 m a x . 2SB1057 4 ~ ■ # n d> CM it/F e a tu r e s ■X 3§ L 4J* -1 o • £ k , ¡ t S t S i X i f 1 > ii£ h FE	OCR Scan	2SD1488 2SB1057 2SB1057 33-SI/hFE2 2SD1488 7A20 33SI 2sB105	PDF
2SB1055 Abstract: 2SD1486 Contextual Info: Inchange Semiconductor Product Specification 2SB1055 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1486 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications	Original	2SB1055 2SD1486 2SB1055 2SD1486	PDF
2SD1480 Abstract: 2SB1052 Contextual Info: Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage	Original	2SD1480 2SB1052 2SD1480 2SB1052	PDF
2SB1050 Contextual Info: Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as	Original	2SB1050 2SB1050	PDF
2SB1054 Abstract: 2SD1485 Contextual Info: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current	Original	2SB1054 2SD1485 2SB1054 2SD1485	PDF

2SB1051K Abstract: T146 T147 2sb1051 Contextual Info: h ÿ "yv7> £ /Transistors 1 1 2SB1051K Epitaxial Planer PNP Silicon Transistor fô ll'/& S :friitiffl/L o w Freq. Power Amp. * ÿfft^i& lll/D im en sio n s Unit : mm IC = 1 A 2) V c E l s a t ) ^ ' » VCE ( s a t ) = - 0 2 V (T yp.) (lc /lB = -5 0 0 m A /-5 0 m A )	OCR Scan	2SB1051K -500mA/-50mA) SC-59 10X10-Â T146 T147 2sb1051	PDF
2SD1487 Abstract: 2SB1056 Contextual Info: JMnic Product Specification 2SB1056 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1487 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications	Original	2SB1056 2SD1487 -140V; -20mA 2SD1487 2SB1056	PDF
Hitachi DSA002754 Contextual Info: 2SB1059 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1490 Outline 2SB1059 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –70 V Collector to emitter voltage	Original	2SB1059 2SD1490 Hitachi DSA002754	PDF
Contextual Info: Transistors 2SB1050 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 1.0 4.5±0.1 R 0.9 R 0.7 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as	Original	2SB1050	PDF
2SB1054 Abstract: 2SD1485 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip	Original	2002/95/EC) 2SD1485 2SB1054 2SB1054 2SD1485	PDF
2SB1054 Abstract: 2SD1485 Contextual Info: Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1054 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage	Original	2SD1485 2SB1054 2SB1054 2SD1485	PDF
2SB1054 Abstract: 2SD1485 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1485 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1054 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip	Original	2002/95/EC) 2SD1485 2SB1054 2SB1054 2SD1485	PDF
2SB1054 Abstract: 2SD1485 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2	Original	2002/95/EC) 2SB1054 2SD1485 2SB1054 2SD1485	PDF
2SB1050 Abstract: 2sB105 Contextual Info: Transistors 2SB1050 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature	Original	2SB1050 2SB1050 2sB105	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2	Original	2002/95/EC) 2SB1054 2SD1485	PDF

2SB105 Search Results

2SB105 Datasheets (95)

2SB105 Price and Stock

Panasonic Electronic Components 2SB10540P

Panasonic Electronic Components 2SB1052

2SB105 Datasheets Context Search

2SB1052

2SB1055

2SB1052

2SB1052

2SD1488

2SB1056

2SD1488

2SB1055

2SD1480

2SB1050

2SB1054

2SB1051K

2SD1487

Hitachi DSA002754

2SB1054

2SB1054

2SB1054

2SB1054

2SB1050