2SD152 Search Results

Contextual Info: T O SH IB A 2SD1525 2 S D 1 525 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D ARLING TO N HIGH CURRENT SW ITCHING APPLICATIONS Unit in mm • • • High Collector Current : Iq = 30A High DC Current Gain : hjrE(l) = 1000 (Min.) Monolithic Construction with Built-In Base-Emitter Shunt

2SC1565

Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
Contextual Info: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207

Hitachi DSA00164

Abstract: DSA0016498
Contextual Info: 2SD1521 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1 ID 1. Emitter 2. Collector 3. Base 2 2 kΩ Typ 3 0.5 kΩ (Typ) 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to emitter voltage

749P

Abstract: 2SD1528
Contextual Info: P o w e r T ra n s is to rs 2SD1528 2SD1528 Silicon NPN Epitaxial Planar Type Package Dim ensions Power Sw itching 1 0 .5 + 0 .5 • Features 9 .8 m a x. • H igh s p e e d sw itch in g 7.6m in • H igh c o l l e c to r -b a s e v o lta g e V cbo • G o o d lin e a rity o f D C c u r r e n t g ain (Iikf )

2SD1529

Contextual Info: Power Transistors b easti 2SD1529 o o iiib i IPNC2 a?a P A N A S O N I C IN DL /EL EK SEMI 2SD1529 b=IE D Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching • Features U n it ! i 3.7m ax. 8.7 max. • H igh sp e e d sw itc h in g t— '*

2SD1525

Abstract: 2-21F1A 316tc
Contextual Info: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.

Contextual Info: 2SD1524 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)450 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200

2sd1525 toshiba

Contextual Info: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.

Hitachi DSA00279

Contextual Info: 2SD1527 Silicon NPN Triple Diffused Application High voltage power amplifier Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 1000 V Collector to emitter voltage

2SD1529

Contextual Info: Power Transistors 2SD1529 2SD1529 Silicon NPN Epitaxial Planar Type • Package D im ensions Power S w itching ■ Features • High speed switching • High collector-base voltage V cbo • Good linearity of DC current gain (h^) • “N Type’’ package configuration with a cooling fin for direct soldering

Contextual Info: 2SD1520 L /(S) Silicon NPN Epitaxial HITACHI Application Medium speed power amplifier Outline DPAK 2SD1520(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage ^C B O 100 V Collector to em itter voltage VcEO 80 V Emitter to base voltage

Hitachi DSA00164

Contextual Info: 2SD1520 L /(S) Silicon NPN Epitaxial Application Medium speed power amplifier Outline DPAK 4 2, 4 4 1 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector ID 2.7 kΩ 0.6 kΩ (Typ) (Typ) 3 2SD1520(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SD1527 Silicon NPN Triple Diffused HITACHI Application High voltage power amplifier Outline TO-220AB 2 1. Base 2. Collector Flange 3- Emitter 3 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base voltage ^C B O 1000 V Collector to em itter voltage

Contextual Info: 2SD1521 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline T O -1 2 6 M O D 1 Absolute Maximum Ratings Ta = 25 °C Item Symbol Collector to em itter voltage Emitter to base voltage Collector current vCE0 v EB0 lc Collector peak current

2SD1521

Abstract: Hitachi DSA00385
Contextual Info: 2SD1521 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1 ID 1. Emitter 2. Collector 3. Base 2 2 kΩ Typ 3 0.5 kΩ (Typ) 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to emitter voltage

2SD1525

Abstract: 2-21F1A
Contextual Info: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.

2SD1527

Abstract: Hitachi DSA00400 Hitachi DSA0040
Contextual Info: 2SD1527 Silicon NPN Triple Diffused Application High voltage power amplifier Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 1000 V Collector to emitter voltage

2-21F1A

Abstract: 2SD1525
Contextual Info: TO SH IBA 2SD1525 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 1 525 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • High Collector Current : l0 = 3OA • High DC Current Gain : hjpg (i) = 1000 (Min.) • Monolithic Construction with Built-In Base-Emitter Shunt

Contextual Info: T O S H IB A 2SD1525 TOSHIBA TRANSISTOR n SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON n mmr mmr s i m mm s h t HIGH CURRENT SWITCHING APPLICATIONS • • • Unit in mm High Collector Current : I q —30A High DC Current Gain : h;pE(i) = 1000 (Min.) Monolithic Construction with Built-In Base-Emitter Shunt

2sd1527

Abstract: DSA003645
Contextual Info: 2SD1527 Silicon NPN Triple Diffused ADE-208-913 Z 1st. Edition Sep. 2000 Application High voltage power amplifier Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage

2SD1529

Contextual Info: Power Transistors 2SD1529 2S D 1529 Silicon NPN Epitaxial Planar Type • Package D im ensions Power Sw itching ■ Features • High speed switching • High collector-base voltage V cbo • Good linearity of DC cu rre n t gain (htE) • “N T ype” package configuration with a cooling fin for direct soldering

Contextual Info: 2SD1520 L /(S) Silicon NPN Epitaxial HITACHI Application Medium speed power amplifier Outline 2SD1520(L)/(S) Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit C o lle cto r to base vo lta g e ^G B O 100 V C o lle cto r to e m itte r vo lta g e

2SD1527

Contextual Info: 2SD1527 Silicon NPN Triple Diffused HITACHI Application High voltage power amplifier Outline T 0 -2 2 0 A B . 1 B a se 2. C o lle c to r F la n g e 3. E m itte r Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base voltage ^G B O

2-21F1A

Abstract: 2SD1525 2SD152 2SD1525(F)
Contextual Info: 2SD1525 TOSHIBA 2 S D 1 525 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D AR LIN G TO N HIGH CURRENT SW ITCHING APPLICATIONS Unit in mm High Collector Current : l£ = 30A High DC Current Gain : hjpg (i) = 1000 (Min.) Monolithic Construction with Built-In Base-Emitter Shunt