2SD163 Search Results

2SD1034

Abstract: 2SD1634 panasonic 2SD
Contextual Info: Power Transistors 2SD 1Ó 34 2SD1634 Silicon PNP Triple-Diffused Planar Darlington Type Package D im ensions Power S w itching U nit ! mm • Features 4 .4m ax. 10.2m ax. • High sp eed sw itching 2.9 m a \ • G ood linearity of DC current gain hFE • “Full P ack” package for simplified m ounting on a heat sink with one

2SD1633

Contextual Info: SavantIC Semiconductor Product Specification 2SD1633 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·High speed switching ·Good linearity of hFE APPLICATIONS ·Power switching applications PINNING PIN DESCRIPTION 1 Base 2

2sd1634

Abstract: NPN POWER DARLINGTON TRANSISTORS
Contextual Info: SavantIC Semiconductor Product Specification 2SD1634 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·High speed switching ·Good linearity of hFE APPLICATIONS ·Power switching applications PINNING PIN DESCRIPTION 1 Base 2

2SB1194

Abstract: 2SD1633
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·High DC Current Gain: hFE= 1500(Min)@ (VCE= -3V, IC= -3A) ·Complement to Type 2SD1633

Contextual Info: Power Transistors 2SD1Ó32 2SD1632 Silicon NPN Triple-Diffused Junction Mesa Type Package Dim ensions Horizontal D eflection O utput U n it ! mm • Features 15.5m ax. 5.2max. 6.9m in. • D a m p e r d iode built-in 3.2 • H igh b re a k d o w n v o lta g e and high reliability by g lass p assiv atio n

2SD1630

Contextual Info: SEC i l > h> y< '7— b =7 7 .9 Darlington Power Transistor 2SD1630 9 N P N l fc: JV W ii/ i; □ > h = 7 > i> i&mfcmtimm, 7 .9 { & & & * * ? * • > * & U L liiJB NPN ^ ',icon EP'taxial Darlington Transistor Audio Frequency Power Amplifier Low Speed Switching

2-7D101A

Abstract: 2SD1631 D1631
Contextual Info: 2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington Power Transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

2-7D101A

Abstract: 2SD1631 D1631 D1631 transistor npn
Contextual Info: 2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

Contextual Info: ROHM CO 40E LTD D • TflEÛ'm GGQSTI S b BI RHM / I ransistors 2SD1638 - :-'-7 T 3 3 - 2 9 X ^ v r ^ 7° b — N PN - > ' ; = ! > $

2sc4137

Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Contextual Info: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638

2SB1194

Abstract: 2SD1633
Contextual Info: Power T ransistors 2SB1194 2SB1194 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Switching Complementary Pair with 2SD1633 •Features • • • • Unit • mm ,10.2max._ 5.7max. High speed switching Good linearity of DC current gain

2SD1638

Contextual Info: SavantIC Semiconductor Product Specification 2SD1638 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·DARLINGTON APPLICATIONS ·For low frequency and power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SD1633

Contextual Info: Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 100 V Collector-emitter voltage (Base open) VCEO 100 V Emitter-base voltage (Collector open) VEBO

2SD1633

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2-7D101A

Abstract: 2SD1631 IBJT
Contextual Info: TO SH IBA 2SD1631 TOSHIBA TRANSISTOR 2 S D 1 631 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS 7.1 MAX POWER AMPLIFIER APPLICATIONS — r -. • 1 1.0 High DC Current Gain : hpE = 4000 (Min.)

Contextual Info: Power Transistors 2SD1634 2SD1634 Silicon PNP Triple-Diffused Planar Darlington Type P a c k a g e D im e n s io n s P o w e r Switchin g U nit ! mm • F e a tu re s 4. 4m ax. 10.2 max . • High sp eed sw itching • Good linearity of DC current gain hFE

D1631 transistor npn

Abstract: D1631 2-7D101A 2SD1631
Contextual Info: 2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

2SD1632

Abstract: ic3a
Contextual Info: SavantIC Semiconductor Product Specification 2SD1632 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage ,high speed ·Built-in damper diode ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications

2SD1633

Abstract: 2SB1194
Contextual Info: Inchange Semiconductor Product Specification 2SB1194 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・High speed switching ・DARLINGTON ・Complement to type 2SD1633 APPLICATIONS ・For power switching applications

2SD1632

Contextual Info: Inchange Semiconductor Product Specification 2SD1632 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High voltage ,high speed ・Built-in damper diode ・Wide area of safe operation APPLICATIONS ・For horizontal deflection output applications

Contextual Info: Power Transistors 2SD1633 2SD1633 Silicon PNP Triple-Diffused Planar Darlington Type P o w e r S w itching • P a c k a g e D im e n s io n s U nit I mm C o m p l e m e n ta r y P a ir with 2 S B 1 1 7 4 4. 4m ax. 10.2n ■ F e a tu r e s 5. 7max. 2 9ma\

2SD1633

Abstract: 2SB1194
Contextual Info: JMnic Product Specification 2SB1194 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・High speed switching ・DARLINGTON ・Complement to type 2SD1633 APPLICATIONS ・For power switching applications PINNING PIN

2sd1633

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit: mm Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 100 V Collector-emitter voltage (Base open)

2SD1638

Contextual Info: 2SD1638 h -7 > V 7 - $ / T r a n s is to r s Freq. P o w er Amp. Epitaxial Planar N P N Silicon Darlington Transistor 1 Vi V V II-7- • ^ J B ^ S tH /D im e n s io n s U n it: mm K > i ^ T h FE ^ 'i§ ^ o KfaiSco N fr>4 2) 3) a : - x • x * 7 • Features