2SD173 Search Results

D1733

Abstract: 2SD1733F5 MARKING CODE f5 transistor BA 14 2SB1181 TA-10-03 2SD1733FS BA, TRANSISTOR
Contextual Info: 2SD1733F5 Transistor, NPN Features • available in CPT F5 SC-63 package • package marking: D1733-AQ, where ★ is hFE code and Q is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage

2SD1732

Abstract: SC-65
Contextual Info: Pow er Tra n sisto rs 2SD1732 2SD1732 Silicon PNP Triple-Diffused Planar Type Package Dim ensions H orizontal Deflection Output —' 15.5max. • Features • • • • • Damper diode built-in Minimizes external component counts and simplifies circuitry

pc 817

Abstract: 2SD1734
Contextual Info: Power Transistors 2SD1734 2SD1734 Silicon PNP Triple-Diffused Planar Type Horizontal Deflection Output Package Dim ensions • Features +i c~O" • • • • High breakdown voltage, high reliability High speed switching Wide area of safety operation ASO

2SD1733

Abstract: 2SB1181 2SB1241 2SB1260 2SD1768S 2SD1863 2SD1898 SC-72
Contextual Info: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V

2SC4290A

Abstract: 2SC4333 j 4310 nec 4312 2SC3586 2SC3153 2SC3997 4303A 2SC3536 2SC3535
Contextual Info: - m tt % Type No. 2SC 4290 y H £ 2SC 4291 X h n 2SC 4292 , = # 2SC 4293 > = & 2SC 4294 H # 2SC 4295 n —A 2SC 4296 « Manuf. ^ yy*ry = * SANYO 2SC3997 Jï TOSHIBA B R NEC B ÎL HITACHI * ± FU JIT S U a fó T MATSUSHITA 2SC4290A 2SD1730 2SD1731 2SC4291 2SM73D

Contextual Info: Power T ransistors 2SD1739 2SD1739 Silicon PNP Triple-Diffused Planar Type Package Dim ensions Horizontal Deflection Output U nit I mm • Features 15.5max. 5.2max. 6.9min. • High breakdow n voltage, high reliability 3.2 Epoxy resin • High speed switching

Contextual Info: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1

2SD1734

Contextual Info: Power Transistors 2SD1734 2SD1734 Silicon PNP Triple-Diffused Planar Type Package Dimensions Horizontal Deflection Output • Features U n it I mm 4.4m ax. 2.9max. 10.2m ax. • High breakdown voltage, high reliability • High speed switching • Wide area of safety operation ASO

2SD1735

Contextual Info: Power Transistors 2SD1735 2SD1735 Silicon PNP Triple-Diffused Planar Type • Package Dimensions Horizontal Deflection Output U n it : mm ■ Features • • • • High breakdown voltage, high reliability High speed switching Wide area of safety operation ASO

ScansU9X27

Contextual Info: Transistors Power Transistor - 80V, -1 A 2SB1260/2SB1181/2SB1241 •Features 1) High breakdown voltage and high current. V c e o = -80V, Ic = -1 A 2) Good fiFE linearity. 3 ) Low VcE(sai). 4) Complements the 2SD1898/ 2SD1863/2SD1733. •External dimensions (Units: mm)

Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Dimensions (Unit : mm) Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type

Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1181 Dimensions (Unit : mm) 2SD1898 1.0±0.2 (1) Structure Epitaxial planer type

2SD1863

Abstract: 2sd1733 2SD1898
Contextual Info: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F •F e a tu re s 1) High ►External dimensions (Units: mm) V ceo . V ceo = 8 0 V 2SD1898 2) High IC. Ic = 1A (DC) 4.5±g:? c+0.2 5 _ 0.1 3) Good hre linearity. 4) Low VcEfsat),

2SD1737

Contextual Info: Power Transistors • 2SD1737 bT 3 EflS 4 G 0 1 1 2 3 2 ■ìsa « p n c e PANASONIC INDL/ELEKÍ SEMI 2SD1737 b'ìE D Silicon PNP Triple-Diffused Planar Type Package Dim ensions Horizontal Deflection Output ■ Features • High breakdow n voltage, high reliability

2SD1737

Contextual Info: Pow er Tra n sisto rs 2SD1737 2S D 1737 Silicon PNP Triple-Diffused Planar Type Package Dimensions Horizontal Deflection Output • Features U nit : mm 5.2max. 15.5max. 6.9min. • H igh b reak d o w n v o ltag e, high reliability 3.2 Epoxy resin • H igh s p e e d sw itch in g

2SD1739

Abstract: TC 30i
Contextual Info: 2SD1739 Power Transistors 2SD1739 Silicon PNP Triple-Diffused Planar Type Horizontal Deflection Output • Features Package Dimensions • High breakdow n voltage, high reliability • High speed switching • Wide area of safety operation ASO • "Full Pack" package for simplified m ounting on a heat sink with' one

2SB1181

Abstract: 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 2SD1898 SC-72
Contextual Info: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 zExternal dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 zFeatures 1) High VCEO, VCEO=80V

Contextual Info: 2SD1735 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)700 V(BR)CBO (V)1.5k I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)750 V(CE)sat Max. (V)8 @I(C) (A) (Test Condition)1

NPN Transistor VCEO 80V 100V

Abstract: hfe 2500 PW 1.5 transistor Ic 1A datasheet Vceo 100V Ic 0.5A 2SD1863 npn transistor 100v min 2SD1898 SC-72 2SB1181
Contextual Info: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V

transistor b54

Abstract: transistor 222 2sB1241 2SB1181 2SB1260 2SD1733 2SD1863 2SD1898 high hfe transistor
Contextual Info: Transistors Power Transistor *80V, *1A 2SB1260 / 2SB1181 / 2SB1241 FFeatures 1) High breakdown voltage and high current. VCEO = *80V, IC = *1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. FExternal dimensions (Units: mm)

Contextual Info: Power T ransistors 2SD1732 2SD1732 Silicon PNP Triple-Diffused Planar Type • Package D im ensions H orizontal D eflection O utput —' U nit 1 mm 15.5m ax. ■ Features 4.7 m a x . o .lm i ^a x . Z • D a m p e r d io d e bu ilt-in • M in im iz es e x t e r n a l c o m p o n e n t c o u n t s and sim p lifies c ir c u itr y

2SD1735

Contextual Info: Power Transistors 2S D 17 35 2SD1735 Silicon P N P Triple-D iffused P lanar Type P ackage Dim ensions Horizontal Deflection Output • Features • • • • High breakdown voltage, high reliability High speed switching Wide area of safety operation ASO

2SD1730

Abstract: 3N25
Contextual Info: Power Transistors 2SD1730 2S D 1730 Silicon PNP Triple-Diffused Planar Type Package Dim ensions H orizontal D eflection O utput 15.5max • Features • • • • • Dam per diode built-in Minimizes external com ponent counts and simplifies circuitry High breakdown voltage, high reliability

DIODE 5H

Abstract: 2SD1731 SC-65
Contextual Info: Pow er Tra n sisto rs 2SD1731 2SD1731 Silicon PNP Triple-Diffused Planar Type Horizontal Deflection Output Package Dim ensions , +1 • Features U n it * mm 15.5max. 4.7m ax. 13.5max. 2. lm ax. ll.O m ax . • D am per diode built-in • Minimizes ex tern al com ponent counts and simplifies circuitry