2SD178 Search Results

2SB1258

Abstract: 2SD1785
Contextual Info: JMnic Product Specification 2SB1258 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1785 ・High DC current gain ・DARLINGTON APPLICATIONS ・Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION

2SD1789

Abstract: ITO-220
Contextual Info: Product Specification www.jmnic.com 2SD1789 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol Absolute maximum ratings(Ta=25℃)

smd transistor marking AJ

Abstract: transistor smd marking AJ SMD AJ AJ MARKING 2SD1782K aj smd transistor
Contextual Info: Transistors IC SMD Type Power Transistor 2SD1782K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low VCE sat .VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA 0.4 3 1 0.55 High VCEO, VCEO=80V. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

2SB1258

Abstract: 12V 3A RELAY PNP 100V 2A 2SD1785
Contextual Info: Inchange Semiconductor Product Specification 2SB1258 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1785 ・High DC current gain ・DARLINGTON APPLICATIONS ・Driver for solenoid ,relay and motor and general purpose

smd transistor marking af

Abstract: 2SD1781K
Contextual Info: Transistors IC SMD Type Medium Power Transistor 2SD1781K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High current capacity in compact package. +0.1 1.3-0.1 +0.1 2.4-0.1 Very Low VCE sat .VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA 2 +0.1

2SD1784

Contextual Info: 2SD1784 TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1784 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)

2SD1788

Abstract: ITO-220
Contextual Info: SavantIC Semiconductor Product Specification 2SD1788 Silicon NPN Power Transistors DESCRIPTION •With ITO-220 package ·Switching power transistor ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol

2SD1781

Abstract: 2sd1781r transistor afr 2SB1197 2SD1781-Q
Contextual Info: 2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Very low VCE sat .VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA)  Complements to 2SB1197

2SB1197

Abstract: 2SD1781 ahr sot23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. 2. EMITTER 3. COLLECTOR

ahr TRANSISTOR

Abstract: ahr sot23
Contextual Info: 2SB1197K SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: Package:SOT-23 1 Low Vce(sat) Vce≤-0.5V (Ic/Ib= -0.5A/-50mA) (2) Ic= -0.8A (3) Complements the 2SD1781K

Contextual Info: SANKEN ELECTRIC CO LTD SSE D • TTTD?1»! OOOlGlb TTb M S A K J Silicon NPN Triple Diffused Planar ☆ Darlington 2SD1785 ☆Com plem ent to type 2SB1258 Application Example: •FM20 • Outline Drawing 4 • D river fo r S o len o id , R elay and M o to r,

2SD1769

Abstract: 2SA1568 2SC4064 2SC5370
Contextual Info: Darlington Transistors V CBO V V CEO (V) 2SB1257 Type No. –60 –60 IC (A) PC (W) Complementary –4 (–6) 25 2SD2014 2SB1258 –100 –100 –6 (–10) 2SB1259 –120 –120 –10 (–15) –60 –60 –12 (–20) Package Remarks 2SD1785 FM20 (T0220F)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD1781 SOT-23 TRANSISTOR NPN FEATURES Very low VCE(sat). VCE(sat) <0.4 V (Typ.) (IC /IB = 500mA / 50mA) z Complements to 2SB1197. z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

100MHZ

Abstract: 2SB1197K 2SD1781K VCBO-40V
Contextual Info: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo

2SD1921

Abstract: 2SD1787 2SD178
Contextual Info: h 7 > y X $ / T ransistors 2SD1787 2SD1921 2SD1787/2SD1921 N PN y ‘j 3 > h 7 > y 'X ^ i Pow er Am p. Epitaxial Planar N PN S ilicon Transistors • W f £ \ f> iIII/ D im e n s io n s Unit : mm 1 ) V c e ( sat ^ 9 0m V at lc = 150m A -f "j 3- 2SD1921 2SD1787

Contextual Info: Transistors Low Frequency Transistor *32V, *0.8A 2SB1197K FFeatures 1) Low VCE(sat). VCE(sat) x *0.5V (Ic / IB = *0.5A / *50mA) 2) IC = *0.8A. 3) Complements the 2SD1781K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type PNP silicon transistor

2SD1784

Abstract: cd 4000 ic
Contextual Info: TO SH IBA 2SD1784 2 S D 1 784 TO SHIBA FIELD EFFECT TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm MICRO MOTOR DRIVE, H A M M ER DRIVE APPLICATIONS SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS • • High DC Current Gain : hjrrç = 4000 (Min.)

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the 2SB1197K. FExternal dimensions (Units: mm) FStructure

sot23 ahq

Abstract: sot23 ahr AHp sot23 ahr transistor ahr sot23
Contextual Info: 2SB1197 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A. Complements the 2SD1781. — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO

marking AFR

Contextual Info: 2SD1781K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features — — 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD1783

Contextual Info: h -7 > y 7. $ / T ransistors 2SD1783 • && 2SD1783 NPN '> U = 1 > h 7 / ÿ X Î i £ ' — ‘J > h > t& Ü Epitaxial Planar NPN Silicon Transistor (Darlington) ^ — £ — K "7 -i ? • 'J U — K 7 < ^ /Motor, Relay Drive • ÿJ-Jfi'+jiH /D im ensiàns (Unit : mm)

2sb1147

Contextual Info: Transistors Medium Power Transistor 32V, 0.8A 2SD1781K •Features ^External dim ensions (Units: mm) 1) Very low VcE(sai). 2 .9 ± 0 .2 VcE(sat) = — 0.13V (Typ.) ( Ic / I b 1 1+02 — 0.1 1.9±0.2 = 500m A/50m A) n 0,8±0.1 0.950.95 2) H igh cu rre n t c a p a c ity in co m p a c t

2SD1781KGP

Abstract: transistor D9C
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SD1781KGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE 3 (2) .055 (1.40) .047 (1.20) .103 (2.64)

100MHZ

Abstract: 2SB1197K 2SD1781K
Contextual Info: 2SD1781K NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR * Feature: 1 Very Low Vce(sat) Vce<0.4V (Ic/Ib= 500mA/50mA) 1. (2) High current capacity in compact package (3) Complements the 2SB1197K Symbol Rating Unit Collector-Emitter Voltage Vceo