2SD18 Search Results

2SB1335

Abstract: 2sd1855
Contextual Info: Inchange Semiconductor Product Specification 2SB1335 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1855 ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier applications PINNING

2SD1832

Abstract: 2SB1292
Contextual Info: Inchange Semiconductor Product Specification 2SB1292 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1832 ・Excellent DC current gain characteristics ・Wide area of safe operation

2SB1230

Abstract: 2SD1840
Contextual Info: JMnic Product Specification 2SB1230 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SD1840 ・Low collector saturation voltage APPLICATIONS ・Motor drivers,relay drivers,converters and other general high-current switching

2SB1255

Abstract: 2SD1895
Contextual Info: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895

Contextual Info: Ordering number : E N 2 1 1 1 B 2SD1800 SA \Y O N P N E p ita x ia l P la n a r S ilicon T ra n s is to r Driver Applications A p p lica tio n s • Ftelay d riv e rs, h a m m e r d riv e rs , la m p d riv e rs , m otor d riv e rs F eatures • H ig h DC c u r r e n t g a in hpE = 4000

D1816

Contextual Info: Ordering number : EN 254ÛA 2SB1216/2SD1816 N 0.254OA SAiYO PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications

2SB1254

Abstract: 2SD1894
Contextual Info: Product Specification www.jmnic.com 2SD1894 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Optimum for 60W HiFi output ・High foward current transfer ratio ・Low collector saturation voltage ・Complement to type 2SB1254 APPLICATIONS

Contextual Info: Ordering number:EN2434 NPN Triple Diffused Planar Silicon Transistor 2SD1887 Color TV Horizontal Deflection Output Applications Applications Package Dimensions • Color TV horizontal diflection output. · Color display horizontal deflection output. unit:mm

2SD1225M

Abstract: 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9
Contextual Info: 2SD1225M/2SD1858 £ / J ransistors h 7 > v ROHM CO LTD 4 2S D 1225M 2S D 1858 T> m É S a 3 S a • R H v ' J a > h 7 > v X N ^ 4 , ^JiMlîlffl/M edium Power Amp. 7^27-2 ] Epitaxial Planar NPN Silicon Transistors VhMVlV’J i-r • WM■^■^0/Dimensions Unit : mm

2SB1252

Abstract: 2SD1895
Contextual Info: P o w er T ra n s is to rs 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U nit ! mm 5.2max. 1 5 .5 m a x . • Features <z> • O ptim u m for 90W hi-fi o u tp u t

Contextual Info: UTC 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High breakdown voltage. BVCEO=120V *Low collector output capacitance.(Typ.20pF at VCB=10V) *High transition frequency.(fT=80MHz) 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)

2SD1816

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS „ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed

2sd1802L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1802 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION „ DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. „ FEATURES * Adoption of FBET, MBIT processes

2SD1875

Abstract: 2Sd-1875
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION

2SB1225

Abstract: 2SD1827
Contextual Info: Inchange Semiconductor Product Specification 2SB1225 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1827 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS

2SB1226

Abstract: 2SD1828
Contextual Info: Inchange Semiconductor Product Specification 2SB1226 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1828 ・High DC current gain. ・Large current capacity and wide ASO. ・DARLINGTON APPLICATIONS ・Motor drivers,printer hammer drivers,relay

Contextual Info: Transistors IC SMD Type Product specification 2SD1819A Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: Transistors SMD Type Product specification 2SD1817 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 2.3 Electrical Connection

ic sc 4145

Abstract: 2SD1816S-E
Contextual Info: Ordering number : EN2540B 2SB1216/2SD1816 Bipolar Transistor http://onsemi.com – 100V, (–)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications

2SD1733

Abstract: 2SB1181 2SB1241 2SB1260 2SD1768S 2SD1863 2SD1898 SC-72
Contextual Info: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V

2SB1219A

Abstract: 2SD1820A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic

w2a transistor

Abstract: transistor w2a 2SB1340 2SD1869 2SD1889 transistor 120v transistor w2a 40
Contextual Info: 2SB1340 2SD1889 Transistors I Power Transistor —120V, — 6A 2SB1340 •F e a t u r e s 1 ) Darlington connection for high DC current gain. 2 ) Bulll-ln resistor between base and em itter. 3 ) Built-In dam per diode. 4 ) Com plem ents the 2S D 1869. ^Absolute m axim um ratings ( T a = 2 5 'C )

2SB1218A

Abstract: 2SD1819A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚

2SB1235

Abstract: sanyo 2033
Contextual Info: Ordering number:EN2554A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1235/2SD1852 Driver Applications Features Package Dimensions • AF amplifier, solenoid drivers, LED drivers. · Darlington connection. · High DC current gain. unit:mm 2033 [2SB1235/2SD1852]