2SD181 Search Results

D1816

Contextual Info: Ordering number : EN 254ÛA 2SB1216/2SD1816 N 0.254OA SAiYO PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications

2SD1816

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS „ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed

Contextual Info: Transistors IC SMD Type Product specification 2SD1819A Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: Transistors SMD Type Product specification 2SD1817 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 2.3 Electrical Connection

ic sc 4145

Abstract: 2SD1816S-E
Contextual Info: Ordering number : EN2540B 2SB1216/2SD1816 Bipolar Transistor http://onsemi.com – 100V, (–)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications

2SB1218A

Abstract: 2SD1819A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚

2SB1218A

Abstract: 2SD1819A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD1815 TRANSISTOR NPN TO-252 FEATURES Low Collector-to-Emitter Saturation Voltage z Excllent Linearity of hFE z High fT z Fast Switching Time z 1. BASE 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD1815 TRANSISTOR NPN TO – 252 FEATURES z Low Collector-to-Emitter Saturation Voltage. z Excellent Linearity of hFE z High Transition Frequency 1. BASE 2. COLLECTOR

Contextual Info: ST 2SD1817R NPN Silicon Epitaxial Planar Transistor Motor drivers, hammer drivers and relay drivers applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 60 V Emitter Base Voltage

2SB1218G

Abstract: 2SD1819G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD1819G • Features ue pl d in an c se ed lud pl vi an m m es

2SB1218A

Abstract: 2SD1819A
Contextual Info: Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and

2SB1218AW

Abstract: 2SD1819A marking BQ 4
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z High forward current transfer ratio hFE z Excellent HFE Linearity. z Complements the 2SD1819A. 2SB1218AW Pb Lead-free APPLICATIONS z For general purpose amplification.

2SD1815

Abstract: 2044B 2SB1215 2SD181
Contextual Info: Ordering number:ENN2539B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1215/2SD1815 High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

L5A relay

Abstract: lm 257 st 2SD181 2539B
Contextual Info: Ordering num ber: EN2539B 2SB1215/2SD1815 N0.2539B PNP/N PN E pitaxial P lan a r Silicon T ransistors SA \ YO High-Current Switching Applications A p p lic a tio n s • Relay drivers, applications. high-speed inverters, converters, and other general high-current

Contextual Info: UTC 2SD1816 NPN EPITAXIAL PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS FEATURES *Low collector-to-emitter saturation voltage *Good linearity of hFE *Small and slim package facilitating compactness of sets . *High fT *Fast switching speed 1 APPLICATION

2SB1218G

Abstract: 2SD1819G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819G • Features ■ Package • High forward current transfer ratio hFE • S-Mini type package, allowing downsizing of the equipment and

2SD1819G

Abstract: 2SB1218G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819G Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218G • Features ■ Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

2SD1812

Abstract: 2SD1818 2SD1832 GV 269 2SD1816 2SD1817 2SD1819A 2SD1820 2SD1820A 2SD1821
Contextual Info: - 268 - mXËfè a g m îa=25°C, *EPfàTc=25'C • v-Bu Vc e o (V) (V) . m Ivvi/w Pc Pc* ICBO (A) (W) (W) (UA) O —A PA 160 160 1.5 0.9 2SD1S15 = m pstr 120 100 3 1 20 PSW 120 100 4 1 H # PD 80 60 3 1 10 2SD1817 W 1!È (V) (Ta=25cC) (V) [*EP(átyp{¡f]

d1816

Abstract: A10460 sd1816 2SB1216 2SD1816 4Q87 zs018 SANYO SS 1001
Contextual Info: SANYO SEMICONDUCTOR CORP SEE 7 cH 7 0 7 b D 00Q7205 1 T-3 3 -/? 2SB1216, 2SD1816 - T - 3 3 - D R P N P /N P N Epitaxial Planar Silicon Transistors 2044 High-Current Switching Applications 2540A Applications . Suitable for relay drivers, high-speed inverters, converters, and other

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1

2044B

Abstract: 2SD1817 EN2369A
Contextual Info: Ordering number:EN2369A NPN Epitaxial Planar Silicon Transistor 2SD1817 Driver Applications unit:mm 2045B Features [2SD1817] 6.5 5.0 • High DC current gain. · Small and slim package permitting the 2SD1817applied sets to be made more compact. 2.3 0.5 4 5.5

2SB1218A

Abstract: 2SD1819A
Contextual Info: Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and

Contextual Info: Transistors IC SMD Type Product specification 2SD1815 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 Fast switching time. +0.28