2SD19 Search Results

2SD1913

Abstract: 2SB1274
Contextual Info: Inchange Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS

Contextual Info: O rd e rin g n u m b e r : EN 3 1 7 5 2SB1325/2SD1999 No.3175 S A \Y O PNP/NPN Epitaxial Planar Silicon Transistors i Compact Motor Driver Applications F e a tu re s • Low saturation voltage •Contains diode between collector and em itter • Contains bias resistance between base and em itter

2SD1990

Abstract: IC003
Contextual Info: 2SD1990 Power Transistors 2SD1990 Silicon NPN Triple-Diffused Planar Type Power Switching Package Dimensions U n it ! m m • Features • High speed switching • Good linearity of DC current gain I ì f e • Large collector power dissipation (Pc) ,10.5 + 0.5

2SD1918

Abstract: 80MHZ
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SD1918 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High breakdown voltage. BVCEO = 160V +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1

2SD1940

Contextual Info: Inchange Semiconductor Product Specification 2SD1940 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Wide area of safe operation APPLICATIONS ·85V/6A, AF 25 to 30W output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter

2SD1911

Abstract: TO-3PML TO3PML
Contextual Info: Inchange Semiconductor Product Specification 2SD1911 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications PINNING

2SD1971

Contextual Info: P ow er Tra n sisto rs 2SD1971 2SD1971 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage Switching • Features • High co llecto r-b a se voltage V • High co llecto r-em itter v o ltage cbo (V ceo) • Large co llecto r p o w er dissipation (Pc)

2SB1325

Abstract: 2SD1999
Contextual Info: Ordering number : ENN3175A 2SB1325 / 2SD1999 PNP / NPN Epitaxial Planar Transistors 2SB1325 / 2SD1999 Compact Motor Driver Applications Features • • • • Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter.

2SB1324

Abstract: 2SD1998
Contextual Info: Ordering number:EN3130 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1324/2SD1998 Compact Motor Driver Applications Features Package Dimensions • Low saturation voltage. · Contains diode between collector and emitter. · Contains bias resistance between collector and

EN2516

Abstract: 2SB1935 2SB1295 2SB193
Contextual Info: Ordering number:EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • AF power amplifier, medium-speed switching, smallsized motor drivers. unit:mm 2018A

2SB1268

Abstract: 2SB126 2sD190 3309ta EN226
Contextual Info: Ordering number:EN2264B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1268/2SD1904 High-Current Switching Applicatons Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching

2267.1

Abstract: EN2267 EN2267B en-2267 2SB1271 EN226
Contextual Info: Ordering number:EN2267B PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1271/2SD1907 High-Current Switching Applications Applications Package Dimensions • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching

2SB1296

Abstract: 2SB1936
Contextual Info: Ordering number:EN2468 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1296/2SD1936 AF Amplifier Applications Applications Package Dimensions • AF power amplifier, medium-speed switching, smallsized motor drivers. unit:mm 2033 [2SB1296/2SD1936] Features · Large current capacity.

2SD1953

Abstract: EN2507 25073
Contextual Info: Ordering number:EN2507 NPN Epitaxial Planar Silicon Transistor 2SD1953 120V/1.5A Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers. unit:mm 2009A Features [2SD1953] 8.0 · Darlington connection. · High DC current gain.

2SB1274

Abstract: 2SD1913 2SB1274 R
Contextual Info: SavantIC Semiconductor Product Specification 2SB1274 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD1913 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS

2SB1323

Abstract: 2SD1997
Contextual Info: Ordering number:EN3129 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1323/2SD1997 Compact Motor Driver Applications Features Package Dimensions • Contains input resistance R1 , base-to-emitter resistance (RBE). · Contains diode between collector and emitter.

2sd1978

Abstract: 2SB1387 DSA003638
Contextual Info: 2SD1978 Silicon NPN Epitaxial, Darlington ADE-208-1162 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB1387 Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 3 2 1 ID 2 kΩ (Typ) 0.5 kΩ (Typ) 1

2SB1393

Abstract: 2SD1985
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1393 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -1.2V(Max,)@ IC= -3A ·Complement to Type 2SD1985

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1979G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low frequency amplification For muting For DC-DC converter • Features ■ Absolute Maximum Ratings Ta = 25°C

LLO14

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1322 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1994 • Package M Di ain sc te on na tin nc ue e/ d  Features  Allowing supply with the radial taping

2sb132

Abstract: 2A marking 2SB1324 2SD1998 ITR09586 ITR09587 ITR09588
Contextual Info: 2SB1324 / 2SD1998 Ordering number : EN3130A SANYO Semiconductors DATA SHEET 2SB1324 / 2SD1998 PNP / NPN Epitaxial Planar Silicon Transistors Compact Motor Driver Applications Features • • • • • Low saturation voltage. Contains diode between collector and emitter.

Contextual Info: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm 2.0 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −180

2SD1947A

Contextual Info: TO SH IBA 2SD1947A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD1947A Unit in mm HIGH CURRENT SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS r • • High DC Current Gain : hjrE = 500~ 1500 l£ = lA Low Collector Saturation Voltage : VCE ( s a t ) = 0.3V (Max.) (IC = 5A)

MAR 641 TRANSISTOR

Abstract: 2SD1934
Contextual Info: Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.9±0.2 4.9±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage