2SD1991 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features • High forward current transfer ratio hFE

2SB1320A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features (0.8) (1.0) 3.5±0.1 (0.7) 0.65 max.

2SB1320A

Abstract: 2SD1991A 2SB1320
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features (0.85) 0.65 max. 14.5±0.5 d p lan inc

2SD1991A

Contextual Info: 2SD1991A NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB1320A

Abstract: 2SD1991A
Contextual Info: Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A Unit: mm 0.15 0.65 max. 14.5±0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

2SD1991A

Abstract: 2SB1320A
Contextual Info: Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

NEC 2SD1564

Abstract: 2SC3296 2sd2394 2012 NEC 2SD1993 2sd1780 2SD1995 2SD1991R 2SC4488 2SD1558
Contextual Info: - 256 - M £ Type No. M % a Manuf. SANYO 2 TOSHIBA NEC 2SD 1986 □ —A 2SD1190 2SD686 2SD1564 2SD 1987 □—A 2SD1825 2SD1414 2SD1595 2SD 1988 □ —A ÍZ. HITACHI 2SD1558 * ± FU JITSU fé T MATSUSHITA □ —A T 2SD 1991 r fé T 2SD1991A 2SD 1992 y

2SB1320A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features (0.8) (1.0) 3.5±0.1 (0.7) 0.65 max.

2SB1320A

Abstract: 2SD1991A
Contextual Info: Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1320A Unit: mm 0.15 0.65 max. 14.5±0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

2SD1991

Abstract: 2SB1320
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1991 • Package  Allowing supply with the radial taping  Code MT-1-A1 M Di ain

2SB1320A

Abstract: 2SD1991A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es si tf

2SB1320A

Abstract: 2SD1991A
Contextual Info: Transistors 2SB1320A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 1.45 ±0.05 0.8 1.0 • Features 3.5±0.1 For general amplification Complementary to 2SD1991A 0.85 14.5±0.5 0.65 max. • High forward current transfer ratio hFE

2SB1320A

Abstract: 2SD1991A
Contextual Info: Transistors 2SB1320A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1991A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features (0.8) (1.0) 3.5±0.1 (0.7) 0.65 max. 14.5±0.5 (0.85) • High forward current transfer ratio hFE

2SD2037

Abstract: 2SD2001 2SD1993 2SD1995 2sd2033 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A
Contextual Info: - 276 - 13=25*0, *Ep[àTc=25Tï M 2SD1988 2SD1989 2SD1990 2SD1991A 2SD1992A 2SD1993 2SD1994A 2SD1995 2SD1996 2SD1997 2SD1998 2SD1999 2SD2000 2SD2001 2SD2Q12 2SD2014 2SD20Î5 2SD2016 2SD2017 2SD2018 2SD2019 2SD2022 2SD2023 2SD2024 2SD2025 2SD2027 2SD2028

2SB1320A

Abstract: 2SD1991A
Contextual Info: Transistors 2SB1320A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 1.45 ±0.05 0.8 1.0 • Features 3.5±0.1 For general amplification Complementary to 2SD1991A 0.85 14.5±0.5 0.65 max. • High forward current transfer ratio hFE

2SD1991A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1991A TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High foward current transfer ratio hFE z Low collector to emitter saturation voltage VCE(sat). z Allowing supply with the radial taping.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm 6.9±0.1 (4.0) 2.5±0.1 (0.8) • Features • High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1320 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1991 • Package M Di ain sc te on na tin nc ue e/ d  Features  Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1991A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1320A Unit: mm • Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: 2SD1991Q Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

48 pin jungle ic

Abstract: crt color ctv block diagram CSB503F38 CSB503f AN5367FB flat screen tv circuit diagram AFSC 6 pin rgb high power led crt signal input sine wave 1 MHz
Contextual Info: ICs for TV AN5367FB NTSC video, chroma, and deflection signal processing circuit • Overview Unit: mm 14.0±0.3 12.0±0.2 36 25 24 12.0±0.2 14.0±0.3 1.6 37 ■ Features 1 12 0.80 0.35 +0.10 – 0.05 Seating plane (1.0) +0.10 (1.6) 13 1.95±0.20 48 0.1±0.1

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for