2SB1347
Abstract: 2SD2029
Text: SavantIC Semiconductor Product Specification 2SB1347 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2029 ·Wide area of safe operation ·High transition frequency fT ·Optimum for the output stage of a Hi-Fi audio amplifier
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2SB1347
2SD2029
-160V;
-20mA
2SB1347
2SD2029
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0±0.3 3.0±0.3 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −160 V
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2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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2SD2029
2SB1347
2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO 160 V
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2SD2029
2SB1347
2SB1347
2SD2029
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 2.0 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −160
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2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
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2SB1347
2SD2029
2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (2.0) (1.5) • Excellent collector current IC characteristics of forward current transfer ratio hFE
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2SB1347
2SD2029
2SB1347
2SD2029
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2SD2029
Abstract: 2SB1347
Text: SavantIC Semiconductor Product Specification 2SD2029 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1347 ·Wide area of safe operation ·High transition frequency APPLICATIONS ·Optimum for the output stage of a Hi-Fi audio amplifier applications
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2SD2029
2SB1347
2SD2029
2SB1347
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm φ 3.3±0.2 2.0±0.3 3.0±0.3 1.5 2.7±0.3 1.0±0.2 • Absolute Maximum Ratings TC = 25°C 0.6±0.2 5.45±0.3 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a
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2SD2029
2SB1347
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2SB1347
Abstract: 2SD2029
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1347 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2029 APPLICATIONS ·Power amplifier applications
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2SB1347
-160V
2SD2029
-160V;
-20mA;
2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (2.0) (1.5) • Excellent collector current IC characteristics of forward current transfer ratio hFE
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2SD2029
2SB1347
2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO
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2SB1347
2SD2029
2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1347 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO
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2SD2029
2SB1347
700mA
600mA
500mA
400mA
2SB1347
2SD2029
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Untitled
Abstract: No abstract text available
Text: , One, TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SD2029 Silicon NPN triple diffusion planar type For high power amplification Unit: mm Complementary to 2SB1347 • Features • Satisfactory foward current transfer ratio hFE collector current Ic
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2SD2029
2SB1347
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 10.0 (6.0) (2.0) (4.0) (3.0) φ 3.3±0.2 (1.5) 1.0±0.2 0.6±0.2 10.9±0.5 Rating Unit Collector to base voltage VCBO 160 V
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2SD2029
2SB1347
2SB1347
2SD2029
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2SB1347
Abstract: 2SD2029
Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO
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2SB1347
2SD2029
2SB1347
2SD2029
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SB1347
Abstract: 2SD2029 SS 109
Text: Power T ransistors 2SB1347 2SB1347 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2029 U n it : mm 5.3max. 20.5max. • Features 3.0— • Very good linearity of DC current gain hFi • Wide area of safety operation (ASO)
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2SB1347
2SD2029
G01b2Tb
2SB1347
2SD2029
SS 109
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2SB1347
Abstract: 2SD2029 20 A class b power transistors current gain
Text: Power Transistors 2SD2029 2SD2029 Silicon Trip le -D iffu se d Planar Type P a c k a g e D im e n s io n s H igh P o w e r A m p lifie r C o m p le m e n ta ry P a ir with 2 S B 1 3 4 7 U n it 1 m m 2 0 .5 m a x ._ j • F e a tu re s 5.3max. 3.0 4 • V ery g o o d lin earity of D C c u r re n t gain hFE
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2SD2029
2SB1347
2SB1347
2SD2029
20 A class b power transistors current gain
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SB1347 2SB1347 Sipcon PNP Triple-Diffused Planar Type High Power Amplifier Complementary Pair with 2SD2029 •Features • V ery good linearity of DC c u rre n t gain • Wide area of safety operation ASO Package Dimensions U nit : mm
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2SB1347
2SD2029
bT32fiS2
32flS5
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2029 2SD2029 Silicon Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complem entary Pair with 2 S B 1 3 4 7 U nit I mm 5.3max. 20.5max. 3.0- • Features 1 4 • V ery g o o d lin earity of DC c u r re n t gain hre
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2SD2029
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2SB1531
Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SB1531
2SD2340 equivalent
2SB1255
2sb1492
2SD2328
2SA1185
2SB1421
2SC4535
2SD1457
2SD1457A
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Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100
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2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SA1185
2SB1054/2SD1485
2SB1421
2SD1457
2SD1457A
2SB1252/2SD1892
2SB1502/2SD2275
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