2SD206 Search Results

2SD2060

Abstract: 2SB1368
Contextual Info: Product Specification www.jmnic.com 2SD2060 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1368 ・Low collector saturation voltage: VCE SAT =1.7V(Max) at IC=3A,IB=0.3A ・Collector power dissipation: PC=25W(TC=25℃)

2SB1373

Abstract: 2SD2066
Contextual Info: SavantIC Semiconductor Product Specification 2SB1373 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD2066 ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SD2061

Contextual Info: SavantIC Semiconductor Product Specification 2SD2061 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power

2SD2067

Contextual Info: Transistor 2SD2067 Tentative Silicon NPN epitaxial planer type Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 (0.8) (0.5) (1.0) (0.2) 4.5±0.1 For low-frequency output amplification (1.0) 0.65 max. ● ● ● ● ● Darlington connection. High foward current transfer ratio hFE.

2SD2067

Contextual Info: Transistor 2SD2067 Tentative Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.7 4.0 (1.45) 0.8 • Features ● ● 14.5±0.5 +0.1 0.45–0.05 2.5±0.5 1 2.5±0.5 2 3 2.5±0.1 ● Darlington connection. High foward current transfer ratio hFE.

2SB1373

Abstract: 2SD2066 S1113
Contextual Info: Power T ransistors 2SB1373 2SB1373 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2066 U n it: mm 4.7max. - • Features • V ery good linearity of DC c u rre n t gain 2.1» .¡.s■ tir r t Iife

2SD2061

Abstract: 2SB1187 2SB1187 transistor transistor 2sd2061
Contextual Info: h 7 > '/ 7 ^ /Transistors 2SD2061 2 S D 2 0 6 1 h* îè§î :7<>U/”^ npn ^7>v7^ Freq. Power Am p. Triple Diffused Planar N P N S ilicon Transistor ^ JB ^ tiiiil/D im en sio n s Unit: mm 1) V c e (sat) VCE(sat)=0.3V (Typ.) Ic / I b = 2 A /0 .2 A 2) S M â t « » « h FE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2067 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 2.5±0.1 (0.8) • Darlington connection • High forward current transfer ratio hFE

transistor D304

Abstract: D304 TRANSISTOR 2sd2061 D304 diode d304
Contextual Info: 2SD1957 2SD2061 Transistors 2SD1957 • F e a tu re s 1 H igh D C current gain. 1 6 0 — 500) 2 ) Low VcE(sat). (Typ. 0 .2 V at Ic /Ib = 3 / 0 .3 A ) 3 ) P c=»30W . (T c — 2 5 'C ) 4 ) W ide S O A (safe operating area). 5 ) Built-in dam p e r diode.

251C

Abstract: 2SB1372 2SD2065
Contextual Info: P o w e r T ra n s is to rs — 2SD2065 b q 3 2 flS4 o o n a s M PAN ASO NIC mi m p n c b INDL/ELEK SEM I 2SD2065 bT E D Silicon T rip le -D iffu se d P lanar Type Package Dim ensions High Pow er Am plifier Com plem entary Pair with 2SB1372 U n it ^ mm 5.2m ax.

2SD2066

Abstract: 2SB1373
Contextual Info: Power Transistors 2SD2066 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1373 Unit: mm 15.0±0.5 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● 19.0±0.3 ● 16.2±0.5 ● High breakdown voltage: VCEO = 160V min.

2SD2068

Contextual Info: 2SD2068S Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.16k h(FE) Max. Current gain.40k

2SD2061

Contextual Info: Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power amplifier applications

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2067 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 0.7 • Darlington connection • High forward current transfer ratio hFE • Large peak collector current ICP

2SD2066

Abstract: 2SB1373
Contextual Info: SavantIC Semiconductor Product Specification 2SD2066 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Wide area of safe operation ·Complement to type 2SB1373 APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base

2SD2061

Abstract: 60V transistor npn ic2a transistor 2sd2061 2sD2061 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD2061

Abstract: 2sD2061 transistor transistor 2sd2061 60V transistor npn ic2a
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR NPN TO-220F 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD2062

Abstract: 2SB1345
Contextual Info: Inchange Semiconductor Product Specification 2SB1345 Silicon PNP Power Transistors • DESCRIPTION ·With TO-247 package ·Complement to type 2SD2062 ·Low collector saturation voltage APPLICATIONS ·For power drvier and general purpose applications PINNING

2SB1371

Abstract: 2SD2064
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1371 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2064 APPLICATIONS

2SD2067

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2067 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 0.7 ue pl d in an c se ed lud pl vi an m m es

2SB1372

Abstract: 2SD2065
Contextual Info: Power Transistors 2SB1372 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2065 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –140 V Collector to emitter voltage

2SD2060

Abstract: 2SB1368
Contextual Info: SavantIC Semiconductor Product Specification 2SD2060 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1368 ·Low collector saturation voltage: VCE SAT =1.7V(Max) at IC=3A,IB=0.3A ·Collector power dissipation: PC=25W(TC=25 )

2SB1371

Abstract: 2SD2064
Contextual Info: SavantIC Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2064 ·High transition frequency ·Satisfactory linearity of hFE APPLICATIONS ·For high power amplification PINNING

2SD2061

Abstract: 2SB1369 transistor 2sd2061 IC vertical monitor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1369 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) ·Complement to Type 2SD2061