2SB1371 Search Results

2SB1371

Abstract: 2SD2064 PANASONIC 411
Contextual Info: Power Transistors 2SB1371 2SB1371 Silicon PNP Triple-Diffused Planar Type P ackage Dim ensions High Pow er Amplifier C om plem entary Pair with 2 S D 2 0 6 4 , ' j * c->o • Features • • • • Unit : mm ' ^3.2 5 .2 m a x . iD .a m a x . Very good linearity of DC current gain I if e

2SB1371

Abstract: 2SD2064
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1371 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2064 APPLICATIONS

2SB1371

Abstract: 2SD2064
Contextual Info: SavantIC Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2064 ·High transition frequency ·Satisfactory linearity of hFE APPLICATIONS ·For high power amplification PINNING

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD2064 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Excellent collector current IC characteristics of forward current

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD2064 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO

Contextual Info: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 (3.5) Solder Dip 16.2±0.5 φ 3.2±0.1 2.0±0.2 1.1±0.1 • Absolute Maximum Ratings TC = 25°C

2SB1371

Abstract: 2SD2064
Contextual Info: Inchange Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD2064 ・High transition frequency ・Satisfactory linearity of hFE APPLICATIONS ・For high power amplification

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1371 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 (0.7) 15.0±0.3 (3.2) 21.0±0.5 16.2±0.5 1 Parameter

943P

Contextual Info: Power T ransistors 2SD20Ó4 2SD2064 Silicon Triple-Diffused Planar Type Package D im ensions High Power A m plifier C om plem entary Pair with 2SB1371 U n i t I mm 5 .2 m a x . Ì /3 .2 , 1 5 .5 m a x . • Features 6 .9 m m . • V ery good lin earity of DC c u r re n t gain hFE

Contextual Info: Power T ransistors 2SB1371 2SB1371 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2064 c->o • Features 6.9min. -f- • V ery g oo d lin e a rity o f D C c u r r e n t gain hpE • H igh tra n sitio n fre q u e n c y (f-r)

2SB1371

Abstract: 2SD2064
Contextual Info: JMnic Product Specification 2SB1371 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD2064 ・High transition frequency ・Satisfactory linearity of hFE APPLICATIONS ・For high power amplification PINNING PIN DESCRIPTION

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1371 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 3.2 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip • Excellent collector current IC characteristics of forward current

2SB1371

Abstract: 2SD2064
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 (0.7) 15.0±0.3 (3.2) 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip

2SB1371

Abstract: 2SD2064
Contextual Info: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.7 15.0±0.3 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

2SB557 TOSHIBA

Abstract: 2SB1314 toshiba 2sb554 2SB546A 2SB596 2sa483 2SB554 2SB54 2SB557 2SB857
Contextual Info: 564 565 . 566 y 566AK 2SB 566K 2SB 567 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 568 569 „ 510 571 572 „ 573 ^ 574 575 •576 ' 2SB 577 , 2SB 578 ^ 2SB 579 2SB 2SB 2SB 2SB 2SB 2SB 580581 582 583 584 585 2SB 2SB 2SB 2SB 2SB 2SB 586 595 596 598 599 600 2SB 601

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338