2SD2177 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177A Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SD2177A

Contextual Info: Transistor 2SD2177A Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 • Features 4.0 0.8 1.0 1.0 ● 0.2 Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping. ●

2SB1434

Abstract: 2SD2177
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y Th e a pro ou

2SD2177A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177A Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2SB1434

Abstract: 2SD2177
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo

2SB1434

Abstract: 2SD2177
Contextual Info: Transistor 2SD2177 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SB1434.

2SB1434

Abstract: 2SD2177
Contextual Info: Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

2SD2177A

Contextual Info: Transistors 2SD2177A Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 14.5±0.5 (1.0)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177A Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Transistor 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.8 Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SB1434

Abstract: 2SD2177 pc 2505
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat)

2SB1434

Abstract: 2SD2177
Contextual Info: Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

2SD2177A

Contextual Info: Transistor 2SD2177A Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. 14.5±0.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177A Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SB1434

Abstract: 2SD2177
Contextual Info: Transistors 2SD2177 Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 • Features • Low collector to emitter saturation voltage VCE sat • Ccomplementary pair with 2SB1434 • Allowing supply with the radial taping

2SD2177A

Contextual Info: Transistor 2SD2177A Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 • Features 4.0 0.8 1.0 1.0 ● 0.2 Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping. ●

2SB1434

Abstract: 2SD2177
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat)

2SB1434

Abstract: 2SD2177
Contextual Info: Transistors 2SD2177 Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 • Features • Low collector to emitter saturation voltage VCE sat • Ccomplementary pair with 2SB1434 • Allowing supply with the radial taping