2SD2179 Search Results

2SB1446

Abstract: 2SD2179
Contextual Info: Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● 1.0 1.0 ● 1.45 0.8 0.2 Low collector to emitter saturation voltage VCE(sat).

2SB1446

Abstract: 2SD2179
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1446 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2179 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ue pl d in an c se ed lud pl vi an m m es

2SB1446

Abstract: 2SD2179
Contextual Info: Transistors 2SD2179 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1446 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

2SB1446

Abstract: 2SD2179
Contextual Info: Transistors 2SB1446 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2179 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

2SB1446

Abstract: 2SD2179
Contextual Info: Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2179 Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2179 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1446 Unit: mm 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1446 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2179 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SB1446

Abstract: 2SD2179
Contextual Info: Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● 1.0 1.0 ● 1.45 0.8 0.2 Low collector to emitter saturation voltage VCE(sat).

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1446 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2179 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2179 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1446 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2179 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1446 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) • Features • Low collector-emitter saturation voltage VCE(sat)

2SB1446

Abstract: 2SD2179
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2179 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1446 Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y Th e a pro ou

2SB1446

Abstract: 2SD2179
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2179 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1446 Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 • Low collector-emitter saturation voltage VCE(sat)

2SB1446

Abstract: 2SD2179
Contextual Info: Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2179 Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 Low collector to emitter saturation voltage VCE sat . Allowing supply with the radial taping.

2SB1446

Abstract: 2SD2179
Contextual Info: Transistor 2SD2179 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1446 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SB1446. Allowing supply with the radial taping.

2SB1446

Abstract: 2SD2179
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2179 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1446 Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y Th e a pro ou

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and