2SD234 Search Results

2SB434

Abstract: 2SD234
Contextual Info: SavantIC Semiconductor Product Specification 2SB434 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD234 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION Fig.1 simplified outline TO-220 and symbol

2SD2345

Contextual Info: Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.6±0.15 ● 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO.

2SD2343

Abstract: 2SB1236 2SC4132 2SD1857 T100
Contextual Info: 2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 / 2SD2343 !External dimensions (Units : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC 5 2 ICP 3 0.5 2SC4132 Collector power dissipation 2 2SD1857 2SD2343

2SD2345J

Abstract: SC-89 VEBO-15V
Contextual Info: Transistors 2SD2345J Silicon NPN epitaxial planar type For low frequency amplification Rating Unit Collector-base voltage Emitter open VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open) VEBO 15 V Collector current

2SD234

Abstract: 2SD235 Toshiba transistor 2sd234 2SD235 2SD234Y toshiba 2sd234y 2SD235Y 2SD235O fbise 2SB435
Contextual Info: '> U 3 > N P N i£ |fc tt£ » 2SD234, 2SD235 SILICON NPN DIFFUSED JUNCTION TRANSISTOR O Audio Power Amplifier Applications • \ : V ce sat = 0. 2V(Ty p.) (Ic = lA ) 2SD235 • V9 : Pc = 25W(Tc = 25°C) • 2SB434, 2SB435 ¿ 3 y 7 ! ) A y ft i; 'O4 ~t\ • Complementary to 2SB434 and 2SB435.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2345G Silicon NPN epitaxial planar type For low-frequency amplification • Features ■ Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

2SD2341

Contextual Info: Power Transistors 2SD2341 Silicon NPN triple diffusion planar type Unit: mm For power amplification • Low collector to emitter saturation voltage VCE sat • High collector to emitter voltage VCEO • Allowing automatic insertion possible with radial taping

2SD2345J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2345J Silicon NPN epitaxial planar type For low frequency amplification Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 40

2SB1531

Abstract: 2SD2340 2sb15
Contextual Info: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm M Di ain sc te on na tin nc ue e/ d 15.0±0.5 4.0±0.1 4.0±0.1 2.0±0.1 15.0±0.2 20.0±0.3 19.0±0.3 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output

2SD2345G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2345G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

2SD2345

Contextual Info: Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.6±0.15 ● 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO.

2sb1531

Abstract: 2SD2340 130VB
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -5A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD2340 APPLICATIONS

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SB1531

Abstract: 2SD2340 1305s
Contextual Info: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2345J Silicon NPN epitaxial planar type For low frequency amplification Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 40

2SB1186

Abstract: 2sb1186 equivalent 2SB1236 2SC4132 2SD1763 2SD1857 2SD2343
Contextual Info: Transistors 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 94L-268-A56 (96-175-C56) 276

2SD2349

Contextual Info: SavantIC Semiconductor Product Specification 2SD2349 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal deflection output for color TV PINNING

2SD234

Abstract: 2SD234 equivalent 2SB434
Contextual Info: SavantIC Semiconductor Product Specification 2SD234 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SB434 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SD234

Abstract: 2SB434
Contextual Info: SavantIC Semiconductor Product Specification 2SB434 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD234 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION 1 Emitter 2

2SD2340

Abstract: TO-3PN
Contextual Info: SavantIC Semiconductor Product Specification 2SD2340 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2345G Silicon NPN epitaxial planar type For low-frequency amplification • Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Transistors 2SD2345 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Unit Collector-base voltage Emitter open VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open)

2SD2345

Abstract: SC-75
Contextual Info: Transistors 2SD2345 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Emitter-base voltage Collector open Collector current Peak collector current

2SD2341

Contextual Info: Power Transistors 2SD2341 Silicon NPN triple diffusion planar type Unit: mm For power amplification • Low collector to emitter saturation voltage VCE sat • High collector to emitter voltage VCEO • Allowing automatic insertion possible with radial taping