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    2SD2406 Search Results

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    2SD2406 Price and Stock

    Toshiba America Electronic Components 2SD2406-Y(F)

    TRANS NPN 80V 4A TO220NIS
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    DigiKey 2SD2406-Y(F) Tube
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    Chip1Stop 2SD2406-Y(F) 360
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    Samtec Inc HW-01-12-S-D-240-630

    Conn Board Stacker HDR 2 POS Solder ST Thru-Hole - Bulk (Alt: HW-01-12-S-D-240-6)
    Free Sample
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    Master Electronics HW-01-12-S-D-240-630
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    Sager HW-01-12-S-D-240-630
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    2SD2406 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD2406 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2406 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2406 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2406 Toshiba Silicon NPN transistor for power amplifier applications Scan PDF
    2SD2406-O Toshiba 2SD2406 - TRANSISTOR 4 A, 80 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power Original PDF
    2SD2406-Y Toshiba 2SD2406 - TRANSISTOR 4 A, 80 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-10R1A, 3 PIN, BIP General Purpose Power Original PDF
    2SD2406Y Toshiba Silicon NPN Triple Diffused Transistor Scan PDF
    2SD2406-Y(F) Toshiba 2SD2406 - TRANS NPN 80V 4A 2-10R1A Original PDF

    2SD2406 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D2406 transistor

    Abstract: 2SD2406 D2406
    Text: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SD2406 D2406 transistor 2SD2406 D2406

    D2406

    Abstract: 2SD2406
    Text: 2SD2406 東芝トランジスタ シリコンNPN三重拡散 2SD2406 ○ 電力増幅用 単位: mm • コレクタ損失が大きい。: PC = 25 W Tc = 25°C • hFE の直線性が良い。 絶対最大定格 (Tc = 25°C) 項 目 記 号 定 格 単位


    Original     		PDF 2SD2406 2-10R1A 20070701-JA D2406 2SD2406

    D2406 transistor

    Abstract: D2406 2SD2406
    Text: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SD2406 D2406 transistor D2406 2SD2406

    D2406 transistor

    Abstract: No abstract text available
    Text: 2SD2406 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406 Power Amplifier Applications Unit: mm • High power dissipation: PC = 25 W Tc = 25°C • Good hFE linearity Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SD2406 2-10R1A D2406 transistor

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2SK1045

    Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
    Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100


    Original     		PDF 2SC642A O-204AA/TO-3: 2SC643 2N4030DIE 2C4030 2SC643A 2SK1045 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


    Original     		PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


    Original     		PDF 2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124

    2SD2406

    Abstract: No abstract text available
    Text: T O S H IB A 2SD2406 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm PO W ER AM PLIFIER APPLICATIONS 10 ± 0.3 • • # 3.2 ± 0.2 2 .710.2 High Power Dissipation : P£ = 25W Te = 25°C Good Linearity of hjpg CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SD2406 2-10R1A 961001EAA2 2SD2406

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2406 TO SH IBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2S D 24 Q6 Unit POW ER AM PLIFIER APPLICATIONS 10 ± 0.3 High Power Dissipation : P q = 25W Tc = 25°C Good Linearity of h.FE 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SD2406

    2SD2406

    Abstract: C25W
    Text: T O S H IB A 2SD2406 T O S H IB A TRA N SISTO R SILICON NPN TRIPLE D IFFUSED TYPE 2SD2406 P O W E R A M P L IF IE R A PPLIC A TIO N S • H igh Power D issipation • Good L inearity o f hjrE : U n it in mm P q = 25W Tc = 25°C M A X IM U M RA TIN G S (Ta = 25°C)


    OCR Scan     		PDF 2SD2406 2-10R1A 961001EAA2 2SD2406 C25W

    2SD2406

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2406 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 . ^ 03.2 ±0.23 — 2.71Q.2 i - «I • • High Power Dissipation : P c = 25W Te = 25°C Good Linearity of hjpg CHARACTERISTIC


    OCR Scan     		PDF 2SD2406 2-10R1A 2SD24truments, 2SD2406

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm PO W ER A M PLIFIER APPLICATIO N S. • • High Power Dissipation Good Linearity of hpjj IQ tO .i P q = 25W Tc = 25°C 0 3 .2 ¿0.2 2.7 ±0.2 M A XIM U M RATIN GS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SD2406 2-10R1A

    2SD2406

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2406 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 . ^ 03.2 ±0.23 — 2.71Q.2 i - «I • • High Power Dissipation : P c = 25W Te = 25°C Good Linearity of hjpg MAXIMUM RATINGS (Tc = 25°C)


    OCR Scan     		PDF 2SD2406 2-10R1A 2SD2406

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SD2406 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2406 Unit in mm PO W ER AM PLIFIER APPLICATIONS 10 ±0.3 • • High Power Dissipation : P q = 25W Tc = 25°C Good Linearity of hjr^ «S3.2 + 0.2 - 2.71Q.2 CHARACTERISTIC


    OCR Scan     		PDF 2SD2406

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    Untitled

    Abstract: No abstract text available
    Text: 1. Ratings of Transistors 1.1. Maximum ratings of transistors ercised not to exceed any o f the absolute m axi­ mum ratings, w hile tak in g into account flu ctu ­ ation o f the supply voltage, deviation in prop­ erties o f the electrical com ponents, exceed ing


    OCR Scan     		PDF