2SD260 Search Results

1225 transistor 09 d

Contextual Info: T O SH IB A 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : lipE —2000 (Min.) Low Saturation Voltage : V q £ (sat) = l*5V (Max.)

Contextual Info: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 . Ç&3.2 ±0.2 -j I.- 2.7±0-2

2SD2605

Contextual Info: Power Transistors 2SD2605 Silicon NPN triple diffusion planar type For power amplification Unit: mm • Features 5.0±0.1 High collector to emitter VCEO Allowing supply with the radial taping M Di ain sc te on na tin nc ue e/ d TC=25˚C Symbol Ratings Unit

2sd260

Abstract: 2SD2605 2sd26
Contextual Info: Power Transistors 2SD2605 Silicon NPN triple diffusion planar type For power amplification M Di ain sc te on na tin nc ue e/ d Unit: mm • Features TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage

D2604

Abstract: 2sd2604 D-2604
Contextual Info: 2SD2604 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm

2SD2606

Abstract: 2sd26
Contextual Info: Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington Unit: mm For power amplification M Di ain sc te on na tin nc ue e/ d • Features 1.4 ■ Absolute Maximum Ratings 2.54±0.3 Symbol Ratings Unit 500 V 400 V 12 V 14 A 7 A VCBO VCEO Emitter to base voltage

2SB1668

Abstract: 2SD2607
Contextual Info: 2SB1668 Transistors Power Transistor −100V, −8A 2SB1668 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2607.

2SD2604

Contextual Info: TO SH IBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS . 03.2 ±0.2 2.7±Q.2 High DC Current Gain : —2000 (Min.) Low Saturation Voltage : Vç;e (sat) = 1.5V (Max.)

Contextual Info: Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington Unit: mm For power amplification 10.5±0.3 4.6±0.2 1.4 Extremely satisfactory linearity of the forward current transfer ratio hFE High collector to base voltage VCBO Wide area of safe operation ASO

2SD2607

Abstract: DC 5V to DC 100V CIRCUIT DIAGRAM 2SB1668 TO-220FN
Contextual Info: 2SD2607 Transistors_ Power Transistor 100V, 8A 2SD2607 •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1668.

W6010

Abstract: 2SD2606 npn darlington 6A 400V Ic C 141 Ic 2543
Contextual Info: Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington Unit: mm For power amplification ● 1.4 1.4±0.1 0.8±0.1 • Absolute Maximum Ratings 2.54±0.3 Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO

Contextual Info: 2SD2607 Transistors For Power amplification 100V, 8A 2SD2607 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) High hFE by darlington connection.

2SD2604

Contextual Info: TO SH IBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ± 0.3 . 03.2 ± 0.2 2.7±Q.2 High DC Current Gain : —2000 (Min.)

darligton transistor

Abstract: 2SD2600
Contextual Info: Ordering number : ENN*0000 2SD2600 NPN Triple Diffused Planar Silicon Darligton Transistor 2SD2600 Driver Applications Preliminary Applications • Package Dimensions Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit : mm

d2604

Abstract: 2sd2604 D-2604
Contextual Info: 2SD2604 シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD2604 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 • 直流電流増幅率が高い。 : hFE = 2000 (最小)

2SD2604

Abstract: 5001T
Contextual Info: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 i .-03.2 ±0.2 - 2.7±Q.2

2SD2600

Contextual Info: 2SD2600 Ordering number : EN8564 SANYO Semiconductors DATA SHEET 2SD2600 NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features

2SD2605

Abstract: IC104
Contextual Info: Power Transistors 2SD2605 Silicon NPN triple diffusion planar type For power amplification Unit: mm • Features TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO

2SD2607

Abstract: 2SB1668
Contextual Info: 2SD2607 Transistors Power Transistor 100V, 8A 2SD2607 !External dimensions (Units: mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1668. Limits

d2604

Abstract: transistor D2604 D-2604 2SD2604
Contextual Info: 2SD2604 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) Unit: mm

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2SJ683

Abstract: 2SJ684 2SK4164 SMP4001 2sk4182 2SB1664 2SD2600 2SK2864 2SK4044 2SK4136
Contextual Info: 注文コード No. I 0 1 5 3 ディスクリートデバイス製品 廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、本記載対象の三洋半導体製品を廃止品扱いと致します。

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs