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    2SD414 TRANSISTOR Search Results

    2SD414 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SD414 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB548

    Abstract: 2SD414
    Text: SavantIC Semiconductor Product Specification 2SB548 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD414 APPLICATIONS ·Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN DESCRIPTION


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    2SB548 O-126 2SD414 -50mA 2SB548 2SD414 PDF

    2SB548

    Abstract: 2SD414 Driver and output stages of audio frequency amplifiers
    Text: JMnic Product Specification 2SB548 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD414 APPLICATIONS ・Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN DESCRIPTION 1 Emitter


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    2SB548 O-126 2SD414 -50mA 2SB548 2SD414 Driver and output stages of audio frequency amplifiers PDF

    2SB548

    Abstract: 2SD414
    Text: Inchange Semiconductor Product Specification 2SB548 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD414 APPLICATIONS ・Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN DESCRIPTION


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    2SB548 O-126 2SD414 -50mA 2SB548 2SD414 PDF

    2SD415

    Abstract: 2SD414 2SB548 2SB549 nec transistor 2sb549 NEC 2SD414 SD414
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING UNIT: mm • Ideal for audio amplifier drivers with 30 W to 50 W output • High voltage • Available for small mount spaces due to small and thin package


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    2SB548, 549/2SD414, 2SB549/ 2SD415 2SB548/ 2SD414 2SD415 2SD414 2SB548 2SB549 nec transistor 2sb549 NEC 2SD414 SD414 PDF

    2SB548

    Abstract: 2SB549 2SD414 2SD415 transistor 2SD414
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    2SD1557

    Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
    Text: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m


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    2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099 PDF

    transistor 2SB618

    Abstract: 3A/fllnm 80
    Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS


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    2SA733 2SJ74 2SK170 2SJ76 2SK213 2SJ77 2SK214 2SJ103 2SK246 2SJ109 transistor 2SB618 3A/fllnm 80 PDF

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗2SA988 2SA992


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    X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent PDF

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


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    PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157 PDF

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


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    2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801 PDF

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


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    BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100 PDF

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


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    Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033 PDF

    transistor MJ2501

    Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc


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    MJ413 MJ423 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor MJ2501 BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100 PDF

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


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    BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000 PDF

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


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    MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100 PDF

    2SA1046

    Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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    BD437 BD441. BD438 BD440 BD442 TIP73B TIP74 TIP74A TIP74B TIP75 2SA1046 BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903 PDF

    2SC124

    Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS


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    2N5191, 2N5192 2N5194 2N5195* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC124 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100 PDF

    electronic ballast with MJE13003

    Abstract: BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light


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    BUD43B BUD43B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C electronic ballast with MJE13003 BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100 PDF

    pc1225h

    Abstract: 2SC1844F upc1224h 1225H upc1225 UPC1225H equivalent 1SS53 equivalent UPC1225H YPC12 YPC1225h
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ ¿ P C 1225H 3 0 - 5 0 W POWER AMPLIFIER DRIVER DESCRIPTION juPC1225H is designed fo r use w ith a H i-F i pow er a m p lifie r driver. It is composed o f a d iffe re n tia l a m p lifie r, a pre driver, a d river and p ro te c tio n c irc u it.


    OCR Scan
    1225H uPC1225H PC1225H juPC1225H pc1225h 2SC1844F upc1224h 1225H upc1225 UPC1225H equivalent 1SS53 equivalent YPC12 YPC1225h PDF

    PC1270H

    Abstract: mPC1237 NEC Relay MR31 mPC1270h mPC1237H NEC MR31 RELAY UPC1270H ISS53 mpc1270 PC1224H
    Text: Ñ~ E C ELECTRONICS INC OSE D | bMEVSES □□SSflE'ì D 64 27 525 N E C E LE CT RONIC S INC 05E 22829 D BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ ¿ P C 1 2 7 0 H T-7 9'os-oí 3 0 - 5 0 W POWER AMPLIFIER DRIVER D E S C R IP TIO N ¿/PC1270H is designed fo r use w ith a H i-Fi power am plifier driver. It is composed o f a differential amplifier,


    OCR Scan
    uPC1270H b427S2S 2SA1141 2SC2681 PC1270H mPC1237 NEC Relay MR31 mPC1270h mPC1237H NEC MR31 RELAY ISS53 mpc1270 PC1224H PDF

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan
    2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C PDF

    pc1237h

    Abstract: UPC1237H UPC1225H equivalent uPC1225H MR31 relay uPC1225 pc1225h Equivalent to transistor 2sc945 PC1237 2sc 945 p transistor
    Text: N E C ELECTRONICS INC OSE D J b 4 5 7 S 2 S □ □ E E 7 Eh □ ELECT RO NI CS INC 05E 22726 D -BIPOLAR ANALOG INTEGRATED C IR C U IT S 642 752 5 N E C M PC1225H 3 0 - 5 0 W POWER AMPLIFIER DRIVER T-7V - O S C DESCRIPTION fjPC1225H is designed for use with a Hi-Fi power amplifier driver. It is composed of a differential amplifier, a pre driver, a


    OCR Scan
    uPC1225H fjuPC1225H h427S2S 227M1 juuPC1225H pc1237h UPC1237H UPC1225H equivalent MR31 relay uPC1225 pc1225h Equivalent to transistor 2sc945 PC1237 2sc 945 p transistor PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan
    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


    OCR Scan
    4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362 PDF