2SC194 Search Results

2SC1942

Contextual Info: Inchange Semiconductor Product Specification 2SC1942 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage ・High speed switching APPLICATIONS ・For TV horizontal output applications PINNING See Fig.2 PIN DESCRIPTION

2SC1942

Contextual Info: JMnic Product Specification 2SC1942 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage ・High speed switching APPLICATIONS ・For TV horizontal output applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

BDY20

Abstract: BU208A BU608 2SD870 2S01168 2S0200 BDY38 BU208 2SC1942 2SD1168
Contextual Info: TO-3 Power Package Transistors NPN Max mum F atings Type No. V CBO V CEC V E0C (V) Min (V) Min (V) Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 800 Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) PD <W) t (A) @Tc=25° 'c a o (MA) V CB

27mhz rf ic

Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,

2SC1942

Contextual Info: SavantIC Semiconductor Product Specification 2SC1942 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For TV horizontal output applications PINNING See Fig.2 PIN DESCRIPTION 1 Base

2SC1946A

Abstract: 2SC-1946A u3020 470q
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1946A N PN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1946A is a silicon NPN epitaxial planar type transistor de­ signed fo r RF power amplifiers on VHF band mobile radio applications. D im e n sio n s in m m FEATURES

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381

transistor f420

Abstract: F420 transistor t430 transistor T591 transistor LT 5222 2SC1940 LT 745 S ifr 220 IFR 730 transistor A514
Contextual Info: NEC Ai > ij n ^ Silico n T r a n s is to r h > ^ X 2SC1940 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier W-MM/ PA C K A G E D IM EN SIO N S Unit : mm * T" A ^ T > 7 ° < 7 ) 7 ° U O S u i t a b l e for d r i v e r of audio f re q u e n c y ampli f i er a ppl i c at i ons.

jb 5531

Abstract: 2SA915 T108 T460 2SC1940
Contextual Info: = r— ^ • 5 /— h SEC Iïf/\f7 « '> ij a h =7 > i > 7 . 9 > Silicon T ra n sisto r 2SA915 a W O Jr — T U ¿ r T > 7 <7 7') Ï ^ mm 7.0M AX. o 2SC19401 ^ > 7° >J y > ? >J T'fêffl T ê t t 0 <, S S i f E - f t o P T = 1.0 W, V GEo = -120 V ( T a =

Contextual Info: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. Dimension in mm 9.1 ± 0 . 7

2sc1947

Abstract: 2SC1947 equivalent
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use R F power amplifiers on V H F band mobile radio applications. Dimensions in mm

2SC1946A

Abstract: RF POWER TRANSISTOR NPN
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1946A NPN EP IT A X IA L P LA N A R T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 1 9 4 6 A is a silicon NPN epitaxial planar type transistor de­ signed fo r R F power amplifiers on V H F D im ension s m m m band mobile radio

2SC1940

Abstract: 2sa915 TRANSISTOR 2SC1940 Ge 2sa
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE D E SC R IP T IO N 2SC1940 The 2SC1940 is designed for use in driver stages of audio P A C K A G E D IM E N S IO N S frequency amplifiers. in m illim eters inches FEATURES 7.0MAK ¡0 275MAX ) • High total power dissipation and high breakdown voltage:

transistor 2SC1942

Abstract: 2sc1942 2sc1942 transistor
Contextual Info: CDIL 2SC1942 2SC1942 NPN POWER TRANSISTOR High Voltage Power Switching and TV Horizontal Deflection Output Applications |-— a—-j s z LU IX < C/5 Z O CO 2 LU 2 DIM MIN A B C — E F G H J K L M - 6 .3 5 0 ,9 6 2 9 ,9 0 10,69 5 ,2 0 16,6 4 11,1 5 3 ,8 4

sC4633

Abstract: 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1914A 2SC1913A
Contextual Info: - 112 - <Ta=25‘C.*EP àïc=25<C m 2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1926 2SC1927 2SC1929 2SC1941 2SC1942 2SC1944 2SC1945 2SC1946 2SC1946A 2SC1947 2SC1949 2SC1952 2SC1953 2SC1955 2SC1959 2SC1965 2SC1965A 2SC1966 2SC1967 2SC1968A

2SC1947 equivalent

Abstract: 2sc1947 RF Power Amplifiers 1P H transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm

2SC1946

Abstract: transistor 2sc1946
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1946 NPN E P ITA X IA L PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC1946 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on VHF band mobile radio applications. Dimensions in mm FEATURES

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1946 NPN EPITAXIAL PLANAR TYPE DISCRETION OUTLINE DRAWING 2SC1946 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on VHF band mobile radio applications. D im ensions in m m FEATURES • High power gain: Gp e ^ 6 .7 d B

C312 diode

Abstract: 2SC3238A BLY87A 2SC2983Y BLW80 2SC731 BSS42 2SD1220Y acrian acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 40665 2N5215 C2-8Z C3-12 2SC1947 2SC1965 2N5080 BFY99 ~~~~~69 25 30 2SC731 2SC731 BlY53A 2SC1966 BLX93A BLX68 BLX68 BlW80 ~~~~~7 35 40 MH8112 MH8113 2SD439 2SD1681 2SC2690 2SC2690A PT9732 2SC3292

2SC1945

Abstract: TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES • 0 3 .6 ± 0 . 2

2SC1947

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1947 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 1 9 4 7 is a silic o n N P N epitaxial planar typ e tra n sisto r designed Dimensions in mm f o r ind u stria l use R F p o w e r am p lifiers on V H F band m o b ile radio

2SC1940

Abstract: TRANSISTOR 2SC1940 2SA915 VCEO120
Contextual Info: NEC NPN SILICON TRANSISTOR 2SC1940 DESCRIPTION The 2SC1940 is designed fo r use in driver stages o f audio PACKAGE DIMENSIONS frequency amplifiers. in m illim eters inches FEATURES 7 0 MAX (0 275 MAX.) • High to ta l power dissipation and high breakdown voltage:

BDY38

Abstract: 2SD1168P BU606 2SD870 2S0200 2SC1942 2SD1168 2SD1168Q 2SD200 2SD869
Contextual Info: TO-3 Power Package Transistors NPN Maximum Ratings Type No. VCBO VCE0 VE0O (V) (V) (V) Min Min Min 2SC1942 1500 2SD 1168 1500 2SD 1168P 1500 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) P0 (W) (A) @Tc=25°c fcao (MA) Max VCB (V) 'CES

2SC2240BL

Abstract: KT630A BF140 2SC2240GR TMPT1653N4 KT630B 2SC1841 2SC1940 2SC2240-GR 2SC2389
Contextual Info: LOW•POWER SILICON NPN Item Number Part Number 10 -15 20 25 30 BFY41 BFR21 KT630A BF156 SE7002 SE7002 MPS-LOl MPSLOl BSY79 2S0668 -2S0669 2SCB17 2SCB17 2N1445 KT630B HSE419 2SC1622A 2SC1622A 2SC2235 2SC1841 2SC28810 2SC4102 2SC1940 2SC1940 2SC1S41P 2SC1841P