2SD602 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD602A TRANSISTOR NPN SOT–23 FEATURES  Low Collector to Emitter Saturation Voltage  Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features

MMBT2907ALT1

Contextual Info: 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc max =225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Collector-Base Voltage Vcbo Rating Unit 75 1.

2SB710A

Contextual Info: Transistor 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD602 and 2SD602A Unit: mm • Features Collector to 2SB710 emitter voltage 2SB710A –25 –50 VEBO –5 V Peak collector current ICP –1 A Collector current

Contextual Info: Transistors IC SMD Type Product specification 2SD602 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Mini type package, allowing downsizing of the equipment and 0.55 Low collector to emitter saturation voltage VCE sat .

2SD602

Abstract: Silicon NPN Epitaxial Planar Type
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD602 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Mini type package, allowing downsizing of the equipment and 0.55 Low collector to emitter saturation voltage VCE sat .

marking xs

Abstract: Silicon NPN Epitaxial Planar Type 2SD602A
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SD602A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Mini type package, allowing downsizing of the equipment and 1 0.55 Low collector to emitter saturation voltage VCE sat . +0.1 1.3-0.1 +0.1 2.4-0.1 0.4

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

Contextual Info: Transistors 2SB0710 2SB710 , 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2SB0710A Collector-emitter voltage 2SB0710

2SD602

Abstract: WR1 marking code transistor marking wr1 sot-23 WR1 SOT23 2SD602AR 2SD602R marking code WR1 transistor marking wr1 2SD602-S 2SD602AS
Contextual Info: 2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Low collector to emitter saturation voltage VCE sat A L 3 3 CLASSIFICATION OF hFE (1) C B

2SB0710A

Abstract: 2SB0710 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A
Contextual Info: Transistor 2SB0710, 2SB0710A 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A) Unit: mm • Features Collector to 2SB0710 emitter voltage 2SB0710A –25 –50 VEBO –5 V

WR1 marking code

Abstract: transistor marking wr1 sot-23 2SD602 2SD602A WR1 SOT23 transistor marking wr1 2SB710 2SB710A marking code WR1
Contextual Info: 2SD602, 602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z SOT-23 3 Collector For general amplification Complementary to 2SB710 and 2SB710A Low collector to emitter saturation voltage VCE sat

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0602A (2SD602A) Silicon NPN epitaxial planar type For general amplification Complementary to 2SB0710A (2SB710A) Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD602 TRANSISTOR NPN SOT–23 FEATURES  Low Collector to Emitter Saturation Voltage  Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SB0710

Abstract: 2SB0710A 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A hfe1
Contextual Info: Transistors 2SB0710 2SB710 , 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2SB0710A Collector-emitter voltage 2SB0710

2SB0710A

Abstract: 2SB710A 2SD0602A 2SD602A
Contextual Info: Transistor 2SD0602A 2SD602A Silicon NPN epitaxial planar type Unit: mm For general amplification Complementary to 2SB0710A (2SB710A) 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low collector to emitter saturation voltage VCE(sat)

TRANSISTOR 1P

Abstract: MMBT2907ALT1 2SD602 2SD602LT1
Contextual Info: 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc max =225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Collector-Base Voltage Vcbo Rating Unit 75 1.

2SD0602A

Abstract: 2SD602A XN04502 XN4502
Contextual Info: Composite Transistors XN04502 XN4502 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SD0602A(2SD602A) x 2 elements 0 to 0.1 ●

hFE CLASSIFICATION Marking 24

Abstract: marking DR 2SB0710 2SB0710A marking 25 SC-59 power Transistor hFE CLASSIFICATION Marking CE 2SB710 2SB710A 2SD0602 2SD0602A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) Unit: mm 0.40+0.10 –0.05 • Features

2SD602

Contextual Info: Transistor 2SD0602, 2SD0602A 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710 (2SB710) and 2SB0710A (2SB710A) Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d Symbol

mn171603

Abstract: an8523S AN3815K Mini servo motor AN3452FBS mini servo motor driver AN3893FHP MN1873223 MN187324 5 amp General Purpose Diode
Contextual Info: A pplication B lo c k Diagram s >6480 • Video Applications Note The transistors and diodes listed below can be used for the peripheral circuits in this block diagram. V C R System • Resistor built-in transistor: UN2000T Series S Mini 3P) • General purpose transistor: 2SB710A/2SD602A, etc.

2SD2529

Abstract: 2SB1627 2SC3312 2SD1010 2SD1993 2SD1995 2SB642 2SB1600 2sd661 2SB1601
Contextual Info: ; •Silicon Small Signal Transistors / ! ; # General-use Low Frequency Amplifiers and Others I 2SB1462 12SD2216 1 2SA1791 General­ is e low freq. ampli­ fier 12SC4656 f 2SB1218A 12SD1819A 2SB1219/A I 2SD1820/A i 2SB709A I 2SD601A 1 2SB710/A I 2SD602/A

2SB710A

Abstract: 2SB0710 2SB0710A 2SB710 2SD0602 2SD0602A 2SD602 2SD602A
Contextual Info: Transistor 2SB0710, 2SB0710A 2SB710, 2SB710A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A) Unit: mm 0.40+0.10 ñ0.05 • Absolute Maximum Ratings Parameter 0.4±0.2 2 1 (0.95) (0.95)

2SB0710

Abstract: 2SB0710A 2SB710 2SB710A 2SD0602 2SD0602A 2SD602 2SD602A
Contextual Info: Transistor 2SD0602, 2SD0602A 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710 (2SB710) and 2SB0710A (2SB710A) Unit: mm • Features 2SD0602 30 VCBO VEBO 5 V Peak collector current ICP 1 A Collector current