2SJ2 Search Results

2SJ2 Result Highlights (5)

Part	Manufacturer	Description
2SJ280L-E	Renesas Electronics Corporation	Pch Single Power Mosfet -60V -30A 43Mohm LDPAK(L)
2SJ206-T2-AZ	Renesas Electronics Corporation	Power MOSFETs for Automotive
2SJ211(0)-T1B-A	Renesas Electronics Corporation	Power MOSFETs for Automotive, MM, /
2SJ243(0)-T1-A	Renesas Electronics Corporation	Power MOSFETs for Automotive, USM, /
2SJ202-T1-A	Renesas Electronics Corporation	Pch Mosfet For Switching

2SJ2 Price and Stock

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TE Connectivity ROX2SJ220R RES 220 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ220R	Cut Tape	145,710		1	1 $0.36 10 $0.198 100 $0.1163 1000 $0.08274 10000 $0.08274	Buy Now
	ROX2SJ220R	Ammo Pack	145,000		1,000	1 - 10 - 100 - 1000 $0.07209 10000 $0.04772	Buy Now
Mouser Electronics	ROX2SJ220R		7,369			1 $0.37 10 $0.177 100 $0.089 1000 $0.064 10000 $0.051	Buy Now
Newark	ROX2SJ220R	Bulk	5,528		10	1 - 10 $0.184 100 $0.093 1000 $0.067 10000 $0.067	Buy Now
Avnet Abacus	ROX2SJ220R			17 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TE Connectivity ROX2SJ27K RES 27K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ27K	Ammo Pack	19,000		1,000	1 - 10 - 100 - 1000 $0.07209 10000 $0.04772	Buy Now
Mouser Electronics	ROX2SJ27K		12,151			1 $0.32 10 $0.136 100 $0.083 1000 $0.064 10000 $0.047	Buy Now
Newark	ROX2SJ27K	Bulk	10,253		10	1 - 10 $0.177 100 $0.086 1000 $0.067 10000 $0.067	Buy Now
Avnet Abacus	ROX2SJ27K			17 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TE Connectivity ROX2SJ220K RES 220K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ220K	Cut Tape	8,472		1	1 $0.37 10 $0.205 100 $0.1207 1000 $0.0859 10000 $0.0859	Buy Now
	ROX2SJ220K	Ammo Pack	8,000		1,000	1 - 10 - 100 - 1000 $0.07488 10000 $0.04964	Buy Now
Avnet Americas	ROX2SJ220K	Reel		13 Weeks, 5 Days	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	ROX2SJ220K		2,264			1 $0.37 10 $0.111 100 $0.076 1000 $0.067 10000 $0.047	Buy Now
Newark	ROX2SJ220K	Bulk	7,060		10	1 - 10 $0.137 100 $0.084 1000 $0.059 10000 $0.059	Buy Now
Avnet Abacus	ROX2SJ220K			18 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	ROX2SJ220K		4,000			1 - 10 - 100 - 1000 $0.0715 10000 $0.0549	Buy Now
TE Connectivity ROX2SJ200K RES 200K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ200K	Cut Tape	6,508		1	1 $0.36 10 $0.2 100 $0.1176 1000 $0.08368 10000 $0.08368	Buy Now
	ROX2SJ200K	Ammo Pack	5,000		1,000	1 - 10 - 100 - 1000 $0.07292 10000 $0.0483	Buy Now
Avnet Americas	ROX2SJ200K	Bulk		13 Weeks, 5 Days	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	ROX2SJ200K		12,871			1 $0.34 10 $0.132 100 $0.073 1000 $0.069 10000 $0.051	Buy Now
Newark	ROX2SJ200K	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 $0.058	Buy Now
Avnet Abacus	ROX2SJ200K			18 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	ROX2SJ200K					1 - 10 - 100 - 1000 $0.0742 10000 $0.0559	Buy Now
TE Connectivity ROX2SJ2R2 RES 2.2 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ2R2	Cut Tape	4,240		1	1 $0.35 10 $0.198 100 $0.1161 1000 $0.08258 10000 $0.08258	Buy Now
	ROX2SJ2R2	Ammo Pack	4,000		1,000	1 - 10 - 100 - 1000 $0.07195 10000 $0.04763	Buy Now
Avnet Americas	ROX2SJ2R2	Reel		13 Weeks, 5 Days	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	ROX2SJ2R2		582			1 $0.35 10 $0.136 100 $0.074 1000 $0.058 10000 $0.046	Buy Now
Newark	ROX2SJ2R2	Bulk	928		10	1 - 10 $0.173 100 $0.079 1000 $0.056 10000 $0.056	Buy Now
Avnet Abacus	ROX2SJ2R2			17 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	ROX2SJ2R2					1 - 10 - 100 - 1000 $0.0716 10000 $0.0539	Buy Now

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2SJ2 Datasheets (500)

Part	Manufacturer	Description	Datasheet Type	PDF
2SJ20	Unknown	FET Data Book	Scan	PDF
2SJ20	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SJ20	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SJ200	Toshiba	Pch Power MOSFET; ; Package: TO-3P(N); R DS On (max 0.83); I_S (A): (max -10)	Original	PDF
2SJ200	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SJ200	Toshiba	P-Channel MOSFET	Original	PDF
2SJ200	Toshiba		Original	PDF
2SJ200	Unknown	FET Data Book	Scan	PDF
2SJ200	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF
2SJ200	Toshiba	Field Effect Transistor Silicon P Channel MOS Type	Scan	PDF

2SJ200	Toshiba	Silicon P channel field effect transistor for high power amplifier applications	Scan	PDF
2SJ200-O	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF
2SJ200O	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF
2SJ200-Y	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF
2SJ200Y	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF
2SJ200-Y(F)	Toshiba	2SJ200 - MOSFET P-CH 180V 10A TO-3	Original	PDF

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2SJ2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
marking PP Abstract: 2SJ213 mosfet vgs 5v vds 100v MOSFET SMD pp Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ213 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance RDS on =4.2 MAX.@VGS=-1.0V,ID=-0.3A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1	Original	PDF	2SJ213 OT-89 -100V -300mA marking PP 2SJ213 mosfet vgs 5v vds 100v MOSFET SMD pp
marking H17 Abstract: SMD Transistor h17 2SJ209 mosfet vgs 5v vds 100v max6017 smd h17 Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 its high input impedance. 0.55 Not necessary to consider driving current because of +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V poer supply.	Original	PDF	2SJ209 OT-23 -10mA marking H17 SMD Transistor h17 2SJ209 mosfet vgs 5v vds 100v max6017 smd h17
2SJ201 Abstract: 2SK1530 toshiba pb includes Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SJ201 2SK1530 2-21F1B 2SJ201 2SK1530 toshiba pb includes
EN4233 Abstract: 2SJ259 Text: Ordering number:EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ259] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.	Original	PDF	EN4233 2SJ259 2SJ259] 2SJ259-applied EN4233 2SJ259
2SJ257 Abstract: No abstract text available Text: Ordering number:EN4242 P-Channel Silicon MOSFET 2SJ257 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ257] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.	Original	PDF	EN4242 2SJ257 2SJ257] 2SJ257-applied 2SJ257
2SJ231 Abstract: EN3816 Text: Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ231] 2.5 1.45 1.0	Original	PDF	EN3816 2SJ231 2SJ231] 2SJ231 EN3816
2sj239 Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL Text: MOSFET Product Matrix VdssM * 100 1 20 60 Id A 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]	OCR Scan	PDF	2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
2SJ201 Abstract: 2SJ20 Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : \| Yfs \| -5.OS (TYP.) : « o -H o O (D	OCR Scan	PDF	2SJ201 2SK1530 Ta-25 2-21F1B -10mA, 2SJ201 2SJ20
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	PDF	2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
sb30-03p Abstract: 3SK181 DSE015 3SK189 Text: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251	OCR Scan	PDF	2SJ187 2SJ190 2SJ193 2SJ284 2SJ285 2SJ286 2SJ287 2SJ288 2SJ289 2SJ316 sb30-03p 3SK181 DSE015 3SK189
Untitled Abstract: No abstract text available Text: 2SJ225 2087 i L D L o w D riv e S e r ie s V D5S= 3 0 V P Channel Power M OSFET E 38 10 F e a tu re s •Small ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Meets radial taping. A bsolute M axim um R atings a tT a = 25°C Drain to Source Voltage	OCR Scan	PDF	2SJ225 D151MH,
Untitled Abstract: No abstract text available Text: 2SJ226 LD L o w D rive S eries VDss = 3 0 V 2085 P Channel Power M OSFET •E -381 I F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. ■Meets radial taping. A bsolute M axim um R atin g s at Ta = 25°C	OCR Scan	PDF	2SJ226 41293YK
2SJ469 Abstract: No abstract text available Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5	OCR Scan	PDF	2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469
AX8896 Abstract: No abstract text available Text: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage	OCR Scan	PDF	2SJ287 250mm2X 250mA ----10V 32593TH AX-8896 AX8896

Untitled Abstract: No abstract text available Text: 2SJ230 2085 LD L o w D rive S eries V Dss = 6 0 V P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. tisolute M ax im u m R a tin g s a t Ta = 25°C	OCR Scan	PDF	2SJ230 --10V --20V 31893MH A8-7975
8897 Abstract: No abstract text available Text: 2SJ288 2062 LD L o w D rive S eries VDs s = 6 0 V P Channel Power M OSFET 4308 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage Vdss G ate to Source Voltage	OCR Scan	PDF	2SJ288 10//S, 250mm2X VQD--30V 250mA, --500mA, 31893TH AX-8897 8897
2SJ268 Abstract: No abstract text available Text: O rdering num ber: EN4237 _ 2SJ268 No.4237 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.	OCR Scan	PDF	EN4237 2SJ268 2SJ268-applied
2SJ294 Abstract: 2SJ291 Text: 2SJ294 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter	OCR Scan	PDF	2SJ294 O-22QFM 2SJ291
2SJ257 Abstract: No abstract text available Text: Ordering num ber:EN4242 2SJ257 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. - Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ257-applied equipment.	OCR Scan	PDF	2SJ257 2SJ257-applied
2SJ241 Abstract: No abstract text available Text: TOSHIBA Discrete Semiconductors 2SJ241 Field Effect Transistor Industrial Applications TQ-220FL Silicon P Channel MOS Type Unit in mm L2-tc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt G ate Drive	OCR Scan	PDF	2SJ241 0D2157L,
2SJ284 Abstract: marking am Text: Ordering number: EN4220 2SJ284 P-Channel M OS Silicon F E T Very High-Speed Switching Applications F e a tu re s • Low ON resistan ce. • V ery high-speed sw itching. • Low-voltage drive. A b s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source Voltage	OCR Scan	PDF	EN4220 2SJ284 10/ms, NS4220-3/3 marking am
TRANSISTOR bH-10 Abstract: marking BH-10 2SJ200 2SK1529 SC-65 Text: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs\|= 4 .0 S Typ. • Complementary to 2SK1529	OCR Scan	PDF	2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10
2SJ211 Abstract: N15j Text: •At In MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOS FET FOR SWITCHING T he 2 S J 2 1 1 , P-channel vertical ty p e M O S F E T , is a sw itching device PACKAGE DIMENSIONS Unit : mm source. 2.8 ±0.2 1.5 w hich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V p ow er	OCR Scan	PDF	2SJ211 2SJ211 N15j
Untitled Abstract: No abstract text available Text: TOSHIBA Discrete Semiconductors 2SJ200 Field Effect Transistor 2 Silicon P Channel M O ST ype L -ti-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance	OCR Scan	PDF	2SJ200

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2SJ2 Search Results

2SJ2 Result Highlights (5)

2SJ2 Price and Stock

TE Connectivity ROX2SJ220R

TE Connectivity ROX2SJ27K

TE Connectivity ROX2SJ220K

TE Connectivity ROX2SJ200K

TE Connectivity ROX2SJ2R2

2SJ2 Datasheets (500)

2SJ2 Datasheets Context Search

marking PP

marking H17

2SJ201

EN4233

2SJ257

2SJ231

2sj239

2SJ201

2SK1118

sb30-03p

Untitled

Untitled

2SJ469

AX8896

Untitled

8897

2SJ268

2SJ294

2SJ257

2SJ241

2SJ284

TRANSISTOR bH-10

2SJ211

Untitled