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Renesas Electronics Corporation 2SJ530STL-E POWER FIELD-EFFECT TRANSISTOR, 15A I(D), 60V, 0.16OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components ()	2SJ530STL-E		944			1 $2.124 10 $2.124 100 $2.124 1000 $0.8762 10000 $0.8762	Buy Now
	2SJ530STL-E		60			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Others 2SJ530STLE AVAILABLE EU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SJ530STLE		6,750			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SJ530S Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
2SJ530(S)		Hitachi Semiconductor	Power switching MOSFET		Original	PDF	59.44KB	9
2SJ530S		Hitachi Semiconductor	Silicon P Channel MOS FET High Speed Power Switching		Original	PDF	59.44KB	9
2SJ530S		Kexin	P-Channel MOSFET		Original	PDF	42.5KB	1
2SJ530(S)		Renesas Technology	Silicon P Channel MOS FET		Original	PDF	90.23KB	9
2SJ530S		Renesas Technology	Silicon P Channel MOS FET High Speed Power Switching		Original	PDF	84.38KB	13
2SJ530S		Renesas Technology	Silicon P Channel MOS FET High Speed Power Switching		Original	PDF	61.21KB	11
2SJ530S		Renesas Technology	Silicon P Channel MOS FET		Original	PDF	90.23KB	9

2SJ530S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SJ530S Contextual Info: IC MOSFET SMD Type Hight Speed Power Switching 2SJ530S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS on = 0.08 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1	Original	2SJ530S O-252 2SJ530S	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
2SJ530stl-e Abstract: 2SJ530 2SJ530L-E PRSS0004ZD-B PRSS0004ZD-C Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
2SJ530STL-E Abstract: 2SJ530 2SJ530L-E PRSS0004ZD-B PRSS0004ZD-C 2SJ530STL Contextual Info: 2SJ530 L , 2SJ530(S) Silicon P Channel MOS FET REJ03G0880-0500 (Previous: ADE-208-655C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ. • 4 V gate drive devices. • High speed switching.	Original	2SJ530 REJ03G0880-0500 ADE-208-655C) PRSS0004ZD-B PRSS0004ZD-C 2SJ530STL-E 2SJ530L-E PRSS0004ZD-B PRSS0004ZD-C 2SJ530STL	PDF