2SK1336 Search Results
2SK1336 Datasheets (10)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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2SK1336 | Hitachi Semiconductor | Silicon N-Channel MOS FET | Original | 42.16KB | 8 | ||
2SK1336 | Hitachi Semiconductor | Silicon N Channel MOS FET | Original | 41.63KB | 8 | ||
2SK1336 |
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Silicon N Channel MOS FET | Original | 69.66KB | 7 | ||
2SK1336 | Hitachi Semiconductor | Power Transistors Data Book | Scan | 123.31KB | 1 | ||
2SK1336 | Hitachi Semiconductor | Silicon N-Channel MOS FET | Scan | 146.78KB | 3 | ||
2SK1336 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 81.16KB | 1 | ||
2SK1336 | Unknown | Catalog Scans - Shortform Datasheet | Scan | 79.06KB | 1 | ||
2SK1336 | Unknown | Scan | 481.68KB | 3 | |||
2SK1336 | Unknown | FET Data Book | Scan | 106.07KB | 2 | ||
2SK1336TZ-E |
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Silicon N Channel MOS FET | Original | 69.65KB | 7 |
2SK1336 Price and Stock
Renesas Electronics Corporation 2SK1336-90TZ-E2SK1336-90TZ-E |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK1336-90TZ-E | 1,293 | 200 |
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Buy Now | ||||||
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2SK1336-90TZ-E | 1,293 | 1 |
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Buy Now |
2SK1336 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 Previous: ADE-208-1273 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source |
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2SK1336 REJ03G0933-0200 ADE-208-1273) PRSS0003ZA-A | |
Contextual Info: 2SK1336 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive |
OCR Scan |
2SK1336 | |
2SK1336Contextual Info: 3 6 3 -0 2 ^ 2SK1336 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES # Low On-Resistance # High Speed Switching • Low Drive Current 4 V Gate Drive Device • Suitable for Motor Drive, DC-DC Converter, Power — Can be driven from 5 V source |
OCR Scan |
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Hitachi DSA002757Contextual Info: 2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive |
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2SK1336 Hitachi DSA002757 | |
2SK1336
Abstract: Hitachi DSA00396
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2SK1336 2SK1336 Hitachi DSA00396 | |
2SK1336
Abstract: DSA003639
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2SK1336 ADE-208-1273 2SK1336 DSA003639 | |
2SK1336
Abstract: 2SK1336TZ-E PRSS0003DA-A PRSS0003ZA-A SC-43A
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2SK1336 REJ03G0933-0200 ADE-208-1273) PRSS0003ZA-A 2SK1336 2SK1336TZ-E PRSS0003DA-A PRSS0003ZA-A SC-43A | |
Hitachi DSA002713Contextual Info: 2SK1336 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features x x x x x Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive |
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2SK1336 Hitachi DSA002713 | |
Hitachi DSA00279
Abstract: 2SK1336
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2SK1336 Hitachi DSA00279 2SK1336 | |
Hitachi DSA002780Contextual Info: 2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive |
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2SK1336 D-85622 Hitachi DSA002780 | |
Contextual Info: 2SK1336 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistarice • H igh speed sw itching • Low drive current • 4 V gate drive device —- Can be driven from 5 V source • Suitable for m otor drive, D C -D C converter, pow er sw itch and solenoid drive |
OCR Scan |
2SK1336 | |
Contextual Info: 2SK1336 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.2 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC) |
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2SK1336 | |
2SK1336
Abstract: DIODO
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OCR Scan |
2SK1336 Ta-25 2SK1336 DIODO | |
2SJ235
Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
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OCR Scan |
0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet | |
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2SK3235
Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
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HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053 | |
2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
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D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent | |
2SK1336Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog |
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
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STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D | |
7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
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2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557 | |
APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
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OCR Scan |
ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212 | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor | |
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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Contextual Info: 2SK1697 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC – DC converter, motor drive, |
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2SK1697 2SK1336. | |
Hitachi DSA00279Contextual Info: 2SK1697 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC – DC converter, motor drive, power switch, solenoid drive |
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2SK1697 Hitachi DSA00279 |