2SK138 Search Results

2SK1380

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1380 H I GH S P E E D , H I G H CURRENT SWI TCHING A P P L I C A T I O N S . INDUSTRIAL APPLICATIONS R E L A Y D R I V E , M O T O R D RI VE AND DC-DC C ONV ER T ER A P P L I C A T I O N S .

Contextual Info: TOSHIBA 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive

2SK1385-01

Abstract: n mosfet 1400 v
Contextual Info: 2SK1385-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S lOutline Drawings • Features • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving p o w er • High voltage • V GSs = ± 3 0 V G uarantee

2sk1380

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1380 Field Effect Transistor U n it in m m Silicon N Channel MOSType L2-tt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications F e a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance

Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01

a2198

Abstract: 2SK1388 A2-198
Contextual Info: 2SK1388 FUJI POWER M O S-FET N-C HANNEL SILICON POWER MOS-FET F-III SERIES •Outline Drawings ■ leatures • H gh current • Low on-resistance • N d secondary breakdown • Low driving power • H gh forward Transconductance ■Applications • Motor controllers

2SK1381

Abstract: SC-65
Contextual Info: TOSHIBA 2SK1381 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 381 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive Low Drain-Source ON Resistance : RDg(ON)“ 25mO (Typ.)

Contextual Info: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) z High forward transfer admittance

Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R ds ON 30-150 Volts Maximum Ratinas Device Type V dss (V) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SKl387MR " IS K iW " — '2SK1B56 ; 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR

2SK1382

Contextual Info: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) l High forward transfer admittance

Contextual Info: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01

Contextual Info: 2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) High forward transfer admittance

2SK2079-01M

Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
Contextual Info: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45

2SK1083MR

Abstract: 2SK1086MR 2SK1096MR 2SK1387MR 2SK1388 2SK1505MR 2SK1881L 2SK2048L 2sk1506
Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id (A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049

2SK1389

Contextual Info: 2SK1389 N-channel MOS-FET F-III Series 60V > Features - 0,025Ω 50A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier

2SK1380

Abstract: 6 volt ldr
Contextual Info: TOSHIBA 2SK1380 Field Effect Transistor Silicon N Channel MOS Type L2-tc-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications F e a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance “ r D S (O N ) = 6 - 5 0 ( T y p . )

Contextual Info: TOSHIBA 2SK1381 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 381 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive

a2188

Abstract: A2187 s451 diode 2SK1384 A2186 0003G43
Contextual Info: 2SK1384 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL ENHANCEMENT TYPE MOS-FET F - I S E R I E S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■ A p plicatio ns

Contextual Info: 2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2−π−MOSIII 2SK1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 25 mΩ (typ.) z High forward transfer admittance

transconductance mosfet

Abstract: TFMt SC-65 3AA3
Contextual Info: 2SK1386-01 FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET F - I I S E R I E S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Vyss = ± 3 0 V Guarantee

A2203

Abstract: A-2203 2SK1389 H150 SC-65
Contextual Info: 2SK1389 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - III S E R I E S lOutline Drawings • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers

Contextual Info: 2SK1385-01R FUJI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET F - I I S E R I E S lOutline Drawings • Features ¡•Hicjh speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V CSS = ± 3 0 V Guarantee

Contextual Info: 2SK1381 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSIII 2SK1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance

2SK2079

Abstract: 2SK2079-01M
Contextual Info: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)