k1412
Abstract: 2SK1412LS ITR01044 TC320 TA-3431
Text: 2SK1412LS Ordering number : EN4228C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK1412LS High-Voltage, High-Speed Switching Applications Features • • • • Low ON-resistance, low input capacitance. Ultrahigh-speed switching. High reliability Adoption of HVP process .
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2SK1412LS
EN4228C
k1412
2SK1412LS
ITR01044
TC320
TA-3431
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K1412
Abstract: 2SK1412LS TA-3431 41293 ITR01044 ITR01045 ITR01046 ITR01047 ENN4228B
Text: Ordering number : ENN4228B 2SK1412LS N-Channel Silicon MOSFET 2SK1412LS Ultrahigh-Speed Switching Applications Features • • • • Package Dimensions Low ON-resistance, low input capacitance. Ultrahigh-speed switching. High reliability Adoption of HVP process .
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ENN4228B
2SK1412LS
2078C
2SK1412LS]
O-220FI
K1412
2SK1412LS
TA-3431
41293
ITR01044
ITR01045
ITR01046
ITR01047
ENN4228B
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2SK1412
Abstract: No abstract text available
Text: Ordering number:EN4228 N-Channel Silicon MOSFET 2SK1412 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability Adoption of HVP process . · Micaless package facilitating mounting.
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EN4228
2SK1412
2078B
2SK1412]
O-220FI
2SK1412
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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EP51E
CPH6605
MCH6613
ECH8609
CPH3424
CPH3427
K3614
FW343
FW356
FW360
on line ups circuit diagrams
2SK3850
242M
SSFP package
K3492
3ln03
MCH3435
CPH5612
three phase on line ups circuit diagrams
TN6R04
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TN6Q04
Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Text: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15
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O-220MF
O-220FI
O-220FI5H
O-220ML
O-126
O-126LP
O-126ML
O-220FI
O-220FI5H-HB
O-220FI5H-HA
TN6Q04
2sk4100
2SJ585
2SK4100ls
2SK4101LS
INV250
2SK4096LS
2SJ406
2SK3745LS
2SJ584
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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TN6Q04
Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS
Text: Large Signal Packages Selector Guide CONTENTS ŝQuick Selection Guide P-channel New 2 •TO-3JML Package 14 ŝQuick Selection Guide N-channel New 3~5 ■TO-3PBL Package 14 6,7 ■TO-3PB Package 14 8.9 ■TO-3PML Package 14 15 ŝSwitching Power Supply ŝMotor Drive Use
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O-220
O-220ML
O-220FI
O-220FI5H
O-220FI
O-220FI5H-HB
O-220FI5H-HA
TN6Q04
2SJ585
TN6Q03
2sk4100
2SK4096LS
2SK4100ls
2SJ655
2SK3748
2SK4087LS datasheet
2SK4101LS
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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40610HKPC
TC-00002289
CPH5815
MCH5815
MCH6629
MCH6649
CPH6610
CPH6614
SCH1411
SCH1436
2sk3436
2sc6093
2Sa1872
2SK1597
2SK3850
2SC5269
TT2084
2SC4943
2SC5793
2sa1970
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Untitled
Abstract: No abstract text available
Text: 2SK1412 2078 U H U ltra h ig h V o lta g e S e rie s V DSS= 1 5 0 0 V N Channel Power MOSFET 4228 F e atu re s • Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). • Micaless package facilitating mounting.
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2SK1412
10/us,
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k141
Abstract: No abstract text available
Text: 2SK1412 2078 U H U ltra h ig h V o lta g e S eries V DSS= 1 5 0 0 V N Channel Power M O SFET E 4228 F e a tu re s - Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). • M icaless package facilitating m ounting.
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2SK1412
O-220FI
41293TH
AX-9637
k141
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2SK1412
Abstract: No abstract text available
Text: Ordering number : EN 4228 _ 2SK1412 N-Channel MOS Silicon FET High-Voltage High-Speed Switching Applications F eatures - Low ON resistance, low input capacitance, very high-speed switching. • High reliability Adoption of HVP process . • Micaless package facilitating mounting.
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2SK1412
10//S,
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Untitled
Abstract: No abstract text available
Text: • UH Series Lineup Absolute maximum ratings at Ta = 25°C Type No. ftdtage v t» l m Vcss V 2SK1455 2SK1456 «0 P* (A) m 0.2 Electrical characteristics at Ta = 25°C . . Bpsm Clss tVfsl % {«#} typ-ma* mtitom ax typ atVGS = i0V (pF) m m m 30
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2SK1455
2SK1456
2SK1458
O-220FI
O-220
2SK1459
2SK1462
2SK1463
2SK1464
2SK1465
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2sk1885
Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SJ272
2SJ273
T0-220ML
2SJ274
2SK1904
2SK1905
60m/80m
2SK1906
2SJ275
2SJ276
2sk1885
2sj270
2SK1871
2SK1883
2sk2164
2SK2227
2SJ26
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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K1412
Abstract: K1413 K1464 K923A 2sk1412 to220ml AK1052 AK924 2SJ193 2SK1460
Text: PE5L 89-10 SANYO SEMICONDUCTOR CORP 32E D 7 ci c17G7ti □Q0ci 2 ci l a T '3 ? '0 / ííS^V:í¿^^^i¿^<#rA‘ííf'A,íí'í»ltlKi-niS .040450’ vJ|tV Sanyo Power MOSFETs SANYO Electric Co.,Ltd. Semiconductor Division MKM Series 8 0 0 4 -9 2 9 9 SENICOiiilUCTOR CORP
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17G7ti
2SK1467
2SK14691
2SK1470
--2SK1471
2SK1472
2SK1473
2SK1474
2SK1475
1800m
K1412
K1413
K1464
K923A
2sk1412 to220ml
AK1052
AK924
2SJ193
2SK1460
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NPN Transistor 600V SC-62
Abstract: 2SK2632 2SK1413 SANYO BIPOLAR transistor pcp SANYO SC-62 2SK1924 2SK2623 2SK1412LS 2SK1461 2SK1923
Text: Large-signal Power M0SFETs 5 The Sanyo J-MOS series u tiliz e s Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for v irtu a lly any types of power electronic equipment, the UH Series, AP Series and
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form-126
T0-126LP
T0-220CI
T0-220ML
SC-67,
OT-186)
O-220FIÂ
SC-67KS0T-189}
T0-220MF
lsDwATT220>
NPN Transistor 600V SC-62
2SK2632
2SK1413
SANYO BIPOLAR transistor pcp
SANYO SC-62
2SK1924
2SK2623
2SK1412LS
2SK1461
2SK1923
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13FLP
Abstract: sj22 serie 2sk
Text: • LD Series -TC = 25CC, A b s o lu te M a x im u m R a tin g s T yp e No Package D im en s io n s PCP 2 S J3 1 6 2 S J2 5 4 T a = 25aC V GS ÍV ) Id (A i (W i 12 ±15 1 3 5* 2 S J2 5 7 SM P 2 S J2 5 9 NMP •2SJ225 30 2 S J 37 ± 15 PC P 2 S J2 S 7 2 S J2 2 6
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T0220M
2SK1728
2SK1738
2SK1474
2SK1475
2SK1412
2SK1414
-220FI
2SK1455
23K1456
13FLP
sj22
serie 2sk
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Untitled
Abstract: No abstract text available
Text: SA/iYO T0-220FI LS (Ful 1 Isolation) Outline Series S a n y o ’ s new o u t l i n e T 0 - 2 2 0 F I ( F u l 1 i s o l a t i o n a j c .Dynamic: focus : perfect isolation t y p e ) h a s a wi de v a r i e t y o f p r o d u c t s . transi stoi-s Be i n g out of
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T0-220FI
MT930622TR
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Untitled
Abstract: No abstract text available
Text: SA0YO T 0 - 2 2 0 F I LS ( F u l 1 Isolation) Sanyo's ne w o u t l i n e T0-220FI(Ful 1 is o la tio n o|c Dynami cs These p r o d u c t s technology. are f ocus fabricated over size the electron This of an e l e c t r o n CRT s c r e e n by S a n y o ’ s o r i g i n a l
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T0-220FI
/Ta-25
MT941226TR
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2sK1413
Abstract: T0220FI Vdss 1500V
Text: SAftYO POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo’s own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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2SK1416
2SK1417
2SK1418
2SK1419
2SK1420
2SK1421
2SK1871
2SK1422
2SK1423
2SK1424
2sK1413
T0220FI
Vdss 1500V
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Untitled
Abstract: No abstract text available
Text: SA/im POWER MOS F E T s 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and
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20m/26m
12m/16m
8m/12m
2SK1424
2SK1425
2SK1426
2SK1422
2SK1423
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