2SK165 Search Results

2SK1657

Contextual Info: M O S FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm 2.8 ± 0.2 0.65ig:!5 1.5 3 The 2SK1657 is an N-channel vertical type MOS FET w hich can be driven by 2.5 V power supply. As the MOS FET is lo w Gate Leakage C urrent, it is suitable fo r filte r

Contextual Info: 2SK1659-L.S SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features ^ ■ Outline Drawings • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage ■ Applications • S w itch in g regulators

2SK1657

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 M O S FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS U n it: mm

marking g20

Abstract: 2SK1658
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1658 is an N -channel vertical type MOSFET which 2.1±0.1 can be driven by 2.5 V power supply. 1.25±0.1 As the MOSFET is low Gate Leakage Current, it is suitable for

2SK1656

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATASHEET Warn MOS FIELD EFFECT TRANSISTOR m È8 Œ Êfflfë »n m , 2SK1656 N-CHANNEL MOS FET

2SK1656

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98 .2 FECT TRANSISTOR 2SK1656 N -C H A N N E L M O S FET FOR S W IT C H IN G The 2 S K 1 6 5 6 is an N-channel vertical type MOS F E T which can be

2SK1658

Abstract: TC236
Contextual Info: MOS FIELD EFFECT TRANSISTOR 2SK1658 IM-CHANNELMOS FET FOR SWITCHING The 2SK1658 is an N-channel vertical type MOS FET which can be PACKAGE DIMENSIONS Unit : mm driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable fo r

Contextual Info: DATA SHEET NEC / ELECTRON DEVICE MOS FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOS FET FOR SW ITCHING PACKAGE DIMENSIONS Unit: mm 2 8 + 0.2 _ 0 .6 5 Ï U 1.5 £ 3 - B- The 2S K1657 is an N-channel vertical type MOS FE T w h ic h can be driven by 2.5 V pow er supply.

L1207

Abstract: K1656
Contextual Info: DATA SHEET NEC ELECTRON DEVICE M O S FIELD EFFECT TRANSISTOF / 2SK1656 N-CHANNEL MOS FET FOR SW ITCHING The 2S K 1656 is an N-channel vertical type MOS F E T which can be PA CK AG E D IM E N S IO N S U n it : mm driven by 2.5 V power supply. As the M OS FE T is low Gate Leakage Current, it is suitable for

smd transistor g19

Abstract: 2SK1657
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK1657 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 IGSS= 5nA MAX.@VGS= 3.0V +0.1 1.3-0.1 +0.1 2.4-0.1 Has low gate leakage current 0.4 3 Directly driven by Ics having a 3V power supply. 2 +0.1 0.95-0.1

2SK1658

Abstract: TC236
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98 .2 MOS FIELD EFFECT TRANSISTOR 2SK1658 IM-CHANNELMOS FET FOR SWITCHING The 2SK1658 is an N-channel vertical type MOS FET which can be

marking G19

Contextual Info: MOSFET SMD Type Product specification 2SK1657 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features IGSS= 5nA MAX.@VGS= 3.0V 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Has low gate leakage current 0.4 3 Directly driven by Ics having a 3V power supply. 2 +0.1 0.95-0.1 +0.1

2SK218

Abstract: 2SK198 2SK165 yl 1042 2sk to-92 A23Y marking w5e
Contextual Info: . PANASONIC INDL/ELEK-CSEHI} 7SC D | ^352.54 □ □ □ cit!7D □ I 2 SK165 ' 2SK165 y'Jqy N f t y ^ aq-a s / S i N-Channel Junction / S w ^ S it ^ l iit e f f l /W id e - b a n d , Low -N oise Amplifier j t v f f l / V i d e o Camera Applications • 4#

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE / _ _7 _ . _ _ _ 2SK1658 N-CHANNEL MOS FET FOR SW ITCHING The 2S K 1658 is an N-channel vertical type MOS F E T w h ic h can be PACKAGE DIMENSIONS Unit : mm driven by 2.5 V pow er supply. As the MOS FET is lo w Gate Leakage C u rrent, i t is suitable fo r

d1780

Abstract: 2SK1657 TC236
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1657 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1657 is an N-channel vertical type MOSFET which 2.8 ±0.2 0.4 +0.1 –0.05 can be driven by 2.5 V power supply. As the MOSFET is low Gate Leakage Current, it is suitable for

2SK1656

Contextual Info: DATASHEET Warn MOS FIELD EFFECT TRANSISTOR m È8 Œ Êfflfë »n m , 2SK1656 N-CHANNEL MOS FET FOR SW ITC H IN G The 2SK1656 is an N-channel vertical type MOS FET which can be PACKAGE DIMENSIONS Unit : mm driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable for

G1563

Abstract: D1563 2SK1658 C10535E VP15-00-3 NEC MARKING surface TC236
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING Unit : mm driven by 2.5 V power supply. 2.1 ±0.1 1.25 ±0.1 As the MOS FET is low Gate Leakage Current, it is suitable for appliances

2SK1653

Abstract: 2sk16
Contextual Info: TOSHIBA 2SK1653 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type L2-k-MOS IV 03.2 ± 0.2 10± 0.3 2.7 ± 0.2 High Speed, High Current DC-DC Converter, m Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive

2SK1656

Contextual Info: M O S F ie ld E ffe c t T ra n s is to r 2SK1656 2 S K 165 6Ü 2.5 V l g 9 A 7 ° C 0 N 1 ~ ^ ^ M m m 0 S F E T T ”- f 0 ÎË 'tŒ T M A fjT " è h t z f o , ^ "/ Y y t > X f w t 4" ¿f T î t i f t ÿ # i ^ * M O S F E T i ± Î S l GSS y j )V 9 0 S & J liÉ t

Vos35

Abstract: 2SK1659-L T151
Contextual Info: 2SK1659-L,S^s FUJI POWER MOS-FET N-"HAN NEL SILICON POWER MOS-FET • Features ^ SERIES ^ ■ Outline Drawings • High speed sw itching • Low on-resistance • No secondary b reakd o w n • Low driving p o w er • High vo ltag e ■ Applications • S w itchin g regulators

2SK1653

Abstract: K1653
Contextual Info: TOSHIBA 2SK1653 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOS]V 2 S K 1 653 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. 10 ±0.3 $53.2 ± 0.2

2SK1653

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1653 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOSType l?-7t-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

d1780

Abstract: 2SK1657
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK1657 N チャネル MOSFET スイッチング用 2SK1657 は 2.5 V 駆動タイプの N チャネル縦型 MOSFET で 外形図（単位：mm） す。 2.8 ±0.2 0.4 +0.1

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]