2SK176 Search Results

2SK1761

Abstract: DSA003639
Contextual Info: 2SK1761 Silicon N-Channel MOS FET ADE-208-1315 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter

Hitachi DSA002780

Contextual Info: 2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D 1 2 3

Hitachi DSA002748

Contextual Info: 2SK1761 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline TO-220AB

2sk1760

Abstract: MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT POWER TRANSISTOR 2SK1760 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION

dc-dc converter hitachi

Abstract: 2SK1764 2SK975 DSA003639
Contextual Info: 2SK1764 Silicon N-Channel MOS FET ADE-208-1317 Z 1st. Edition Mar. 2001 Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter

2SK1763

Abstract: 44TB2 Hitachi Scans-001
Contextual Info: blE ]> • 44TbEG5 ÜQlBSEb fl47 « H I T 4 2SK1763 , 2SK1763 s Silicon N Channel MOS FET HITACHI/(OPTOELECTRONICS) Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — can be driven from

2SK1769

Abstract: 8 A diode Field Effect Transistor Silicon N Channel MOS vdss 600
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1769 Industrial Applications Straight Field Effect Transistor Unit in mm Silicon N Channel MOSType c-MOS II 7.2 M AX High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance

Contextual Info: 2SK1764 Silicon N-Channel MOS FET HITACHI Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter

2SK1760

Abstract: 2SK176 MEI-1202 TEA-1035 TC-2437
Contextual Info: DATA SHEET NEC i MOS FIELD EFFECT POWER TRANSISTOR 2SK1760 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1760 is N-channel MOS Field Effect Transistor de­ signed for high voltage switching applications. FEATURES • Low On-state Resistance

2SK1764KYTR

Abstract: 2sk1764 2SK1764KYTL-E 2SK1764KYTR-E SC-62 MARKING IS KY 2SK1764KYTLE 2SK1764KYTL
Contextual Info: 2SK1764 Silicon N Channel MOS FET REJ03G0970-0200 Previous: ADE-208-1317 Rev.2.00 Sep 07, 2005 Application • Low frequency amplifier • High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source

HITACHI 2SJ56

Abstract: 2SJ56 2SJ56 2sk176 2Sk176 HITACHI 2SJ56 HITACHI 2SJ55 2Sj55 HITACHI 2SK176 2Sk175 HITACHI Hitachi 2sk176 2sj56
Contextual Info: blE D • 4MTbEDS DGlEfi^fl 2SJ55,2SJ56 &Z3 MHIT4 HITACHI/ OPTOELECTRONICS SILICON P-CHANNEL MOS FET LOW FREQU EN CY POWER AMPLIFIER Complementary Pair with 2SK175, 2SK176 ■ FEATURES • High Power Gain. • • Excellent Frequency Response. High Speed Switching.

Hitachi DSA00279

Contextual Info: 2SK1764 Silicon N-Channel MOS FET Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switchingregulator, DC-DC converter

Hitachi DSA002748

Contextual Info: 2SK1764 Silicon N-Channel MOS FET November 1996 Application Low frequency amplifier High speed switching Features • • • • Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

2SK1764

Abstract: marking ky fet FET marking ky
Contextual Info: 2SK1764 Silicon N Channel MOS FET Application UPAK Low frequency amplifier High speed switching 3 2 1 4 Features • Low on–resistance • High speed switching • 4 V Gate drive device can be driven from 5 V source • Suitable for switchingregulator, DC–DC

2SK1762

Contextual Info: 2SK1762 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current N o secondary breakdown Suitable for switchingregulator, DC -D C converter Outline TO-220FM

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1768 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel M OSType I?-7t-MOS III High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' r DS(ON) = 0-055£2 (Typ .)

2SK1762

Abstract: 2SK1761 DSA0010892
Contextual Info: 2SK1762 Silicon N Channel MOS FET Application TO–220FM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 12 3 1. 1. Gate

K1761

Contextual Info: 2SK1761 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Outline

Hitachi DSA002780

Abstract: wm60
Contextual Info: 2SK1762 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 1 2 3

2SK1762

Abstract: 2SK1762-E PRSS0003AD-A
Contextual Info: 2SK1762 Silicon N Channel MOS FET REJ03G0969-0200 Previous: ADE-208-1316 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter

Contextual Info: ‘tM'K.gOS 0013533 Tfi? » H i m 2SK1764 HITACHI/ OPTOELECTRONICS Silicon N Channel MOS FET Application blE I UPAK Low frequency amplifier High speed switching Features • Low on-resistance • High speed switching • Suitable for switchingregulator, DC-DC

2sk17

Abstract: Transistor TOSHIBA 2SK 2SK1769
Contextual Info: TOSHIBA 2SK1769 Industrial Applications S tra ig h t Field Effect Transistor U n it in m m Silicon N Channel MOS Type tc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications F eatures • Low Drain-Source ON Resistance

2SJ56 2sk176

Abstract: HITACHI 2SJ56 2SJ56 2SK176 2Sk175 HITACHI 2SK175 DIODE T25 4 lo 2SJ55 2Sk176 HITACHI 2SJ56 HITACHI
Contextual Info: blE D • MMTbEOS DDlEflTfl ATT ■ H I T M 7 ^ 3 * ? 2SJ55,2SJ56~ &2 S H I T A C H I / O P T O E L E C T R O N I C S SILICON P-CHANNEL MOS F ET LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK175, 2SK176 ■ FEATURES • High Power Gain. • Excellent Frequency Response.

DSE 130 -12A

Abstract: 2SK1768 2sk17
Contextual Info: TOSHIBA 2SK1768 Field Effect Transistor In d u s tria l A p p lic a t io n s U n it in m m Silicon N Channel MOS Type L2-7t-MOS III High Speed, High Current Switching Applications F e a tu r e s • Low Drain-Source ON Resistance • ^DS(ON) = 0.055i2 (Typ.)